|
|
@ -128,12 +128,13 @@ MOS1noise(int mode, int operation, GENmodel * genmodel, CKTcircuit * ckt, |
|
|
/* linear region */ |
|
|
/* linear region */ |
|
|
alpha = 1.0 - (vds*inst->MOS1mode/(model->MOS1type*inst->MOS1vdsat)); |
|
|
alpha = 1.0 - (vds*inst->MOS1mode/(model->MOS1type*inst->MOS1vdsat)); |
|
|
} |
|
|
} |
|
|
|
|
|
beta = inst->MOS1tTransconductance * inst->MOS1m * |
|
|
|
|
|
inst->MOS1w/(inst->MOS1l - 2 * model->MOS1latDiff); |
|
|
|
|
|
Sid = 2.0 / 3.0 * beta * vgst * (1.0+alpha+alpha*alpha) / (1.0+alpha) * model->MOS1gdsnoi; |
|
|
} else { |
|
|
} else { |
|
|
alpha = 0.0; |
|
|
|
|
|
|
|
|
/* subthreshold region */ |
|
|
|
|
|
Sid = 0.0; |
|
|
} |
|
|
} |
|
|
beta = inst->MOS1tTransconductance * inst->MOS1m * |
|
|
|
|
|
inst->MOS1w/(inst->MOS1l - 2 * model->MOS1latDiff); |
|
|
|
|
|
Sid = 2.0 / 3.0 * beta * vgst * (1.0+alpha+alpha*alpha) / (1.0+alpha) * model->MOS1gdsnoi; |
|
|
|
|
|
} |
|
|
} |
|
|
|
|
|
|
|
|
NevalSrcInstanceTemp( & noizDens[MOS1IDNOIZ], & lnNdens[MOS1IDNOIZ], |
|
|
NevalSrcInstanceTemp( & noizDens[MOS1IDNOIZ], & lnNdens[MOS1IDNOIZ], |
|
|
|