re-introdeuce parameter phi Resulting temperature dependency of vto still not available

src/spicelib/devices/vdmos/vdmosdefs.h

@@ -57,6 +57,7 @@ typedef struct sVDMOSinstance {
     double VDMOSdtemp;   /* operating temperature of the instance relative to circuit temperature*/
 
     double VDMOStTransconductance;   /* temperature corrected transconductance*/
+    double VDMOStPhi;                /* temperature corrected Phi */
     double VDMOStVto;                /* temperature corrected Vto */
     double VDMOStSatCur;             /* temperature corrected saturation Cur. */
     double VDMOStBulkPot;    /* temperature corrected Bulk potential */

src/spicelib/devices/vdmos/vdmosdset.c

@@ -282,7 +282,7 @@ VDMOSdSetup(GENmodel *inModel, CKTcircuit *ckt)
 
 
 
-    phi = 0.6;
+    phi = here->VDMOStPhi;
     cox = 0;/*FIXME: can we do disto without knowing the oxide thickness?*/
     if (vgst <= -phi) {
     lcapgb2=lcapgb3=lcapgs2=lcapgs3=lcapgd2=lcapgd3=0;

src/spicelib/devices/vdmos/vdmostemp.c

@@ -22,6 +22,7 @@ VDMOStemp(GENmodel *inModel, CKTcircuit *ckt)
     double kt,kt1;
     double arg1;
     double ratio,ratio4;
+    double phio;
     double pbfact1,pbfact;
     double vt,vtnom;
     /* loop through all the resistor models */
@@ -43,6 +44,12 @@ VDMOStemp(GENmodel *inModel, CKTcircuit *ckt)
 
     /* now model parameter preprocessing */
 
+        if (model->VDMOSphi <= 0.0) {
+            SPfrontEnd->IFerrorf(ERR_FATAL,
+                "%s: Phi is not positive.", model->VDMOSmodName);
+            return(E_BADPARM);
+        }
+
         model->VDMOSoxideCapFactor = 0;
 
 
@@ -80,6 +87,8 @@ VDMOStemp(GENmodel *inModel, CKTcircuit *ckt)
 
             ratio4 = ratio * sqrt(ratio);
             here->VDMOStTransconductance = model->VDMOStransconductance / ratio4;
+            phio = (model->VDMOSphi - pbfact1) / fact1;
+            here->VDMOStPhi = fact2 * phio + pbfact;
             here->VDMOStVto = model->VDMOSvt0;
 
             here->VDMOSCbd = 0;