Browse Source
Enable CIDER with KLU for DC, OP, and TRAN analyses. Small signal AC analysis is not yet supported for CIDER complex valued device KLU matrices. The examples/cider testcases produce printed simulation result values which have slight differences between Sparse and KLU. Differences are probably expected and in a few cases are ~1-2%, sometimes a little more. This should be good enough for most CIDER analyses. Francesco did a good piece of work. Runtimes are significantly shorter with KLU.
pre-master-46
Enable CIDER with KLU for DC, OP, and TRAN analyses. Small signal AC analysis is not yet supported for CIDER complex valued device KLU matrices. The examples/cider testcases produce printed simulation result values which have slight differences between Sparse and KLU. Differences are probably expected and in a few cases are ~1-2%, sometimes a little more. This should be good enough for most CIDER analyses. Francesco did a good piece of work. Runtimes are significantly shorter with KLU.
pre-master-46
committed by
Holger Vogt
18 changed files with 854 additions and 9 deletions
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111examples/cider/surfmob/Tbicmpd1.cir
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111examples/cider/surfmob/Tbicmpd1xy.cir
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105examples/cider/surfmob/Tbicmpu1.cir
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105examples/cider/surfmob/Tbicmpu1xy.cir
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159examples/cider/surfmob/cd4007n_200402idvg.net
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159examples/cider/surfmob/cdxy.net
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9examples/cider/surfmob/runtests.sh
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2examples/cider/surfmob/spiceinit
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38src/ciderlib/oned/oneadmit.c
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45src/ciderlib/twod/twoadmit.c
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3src/ciderlib/twod/twocont.c
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3src/ciderlib/twod/twoncont.c
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3src/ciderlib/twod/twopcont.c
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2src/spicelib/devices/nbjt/nbjtset.c
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2src/spicelib/devices/nbjt2/nbt2set.c
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2src/spicelib/devices/numd/numdset.c
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2src/spicelib/devices/numd2/nud2set.c
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2src/spicelib/devices/numos/nummset.c
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BiCMOS Pulldown Circuit |
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VSS 2 0 0v |
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VIN 3 2 0v (PULSE 0.0v 4.2v 0ns 1ns 1ns 9ns 20ns) |
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M1 8 3 5 11 M_NMOS_1 W=4u L=1u |
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VD 4 8 0v |
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VBK 11 2 0v |
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Q1 10 7 9 M_NPN AREA=8 |
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VC 4 10 0v |
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VB 5 7 0v |
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VE 9 2 0v |
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CL 4 6 1pF |
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VL 6 2 0v |
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.IC V(10)=5.0v V(7)=0.0v |
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*.TRAN 0.1ns 5ns 0ns 0.1ns |
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.TRAN 0.1ns 0.3ns 0ns 0.1ns |
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.PLOT TRAN I(VIN) |
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*.include bicmos.lib |
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.MODEL M_NPN nbjt level=2 |
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+ title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR |
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+ * Since, we are only simulating half of a device, we double the unit width |
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+ * 1.0 um emitter length |
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+ options defw=2.0u |
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+ |
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+ *x.mesh w=2.5 n=5 |
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+ x.mesh w=2.0 h.e=0.05 h.m=0.2 r=1.5 |
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+ x.mesh w=0.5 h.s=0.05 h.m=0.1 r=1.5 |
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+ |
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+ y.mesh l=-0.2 n=1 |
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+ y.mesh l= 0.0 n=5 |
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+ y.mesh w=0.10 h.e=0.002 h.m=0.01 r=1.5 |
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+ y.mesh w=0.15 h.s=0.002 h.m=0.01 r=1.5 |
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+ y.mesh w=0.35 h.s=0.01 h.m=0.2 r=1.5 |
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+ y.mesh w=0.40 h.e=0.05 h.m=0.2 r=1.5 |
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+ y.mesh w=0.30 h.s=0.05 h.m=0.1 r=1.5 |
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+ |
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+ domain num=1 material=1 x.l=2.0 y.h=0.0 |
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+ domain num=2 material=2 x.h=2.0 y.h=0.0 |
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+ domain num=3 material=3 y.l=0.0 |
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+ material num=1 polysilicon |
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+ material num=2 oxide |
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+ material num=3 silicon |
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+ |
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+ elec num=1 x.l=0.0 x.h=0.0 y.l=1.1 y.h=1.3 |
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+ elec num=2 x.l=0.0 x.h=0.5 y.l=0.0 y.h=0.0 |
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+ elec num=3 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=-0.2 |
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+ |
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+ doping gauss n.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0 |
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+ + char.l=0.047 lat.rotate |
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+ doping gauss p.type conc=1e19 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0 |
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+ + char.l=0.094 lat.rotate |
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+ doping unif n.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3 |
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+ doping gauss n.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3 |
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+ + char.l=0.100 lat.rotate |
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+ |
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+ method ac=direct itlim=10 |
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+ models bgn srh auger conctau concmob fieldmob |
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|
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.MODEL M_NMOS_1 numos |
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+ title 1.0um NMOS Device |
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+ |
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+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 |
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+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 |
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+ x.mesh w=0.4 h.s=0.005 h.m=0.1 r=2.0 |
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+ x.mesh w=0.4 h.e=0.005 h.m=0.1 r=2.0 |
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+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 |
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+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 |
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+ |
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+ y.mesh l=-.0200 n=1 |
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+ y.mesh l=0.0 n=6 |
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+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 |
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+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 |
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+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 |
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+ |
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+ region num=1 material=1 y.h=0.0 |
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+ region num=2 material=2 y.l=0.0 |
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+ interface dom=2 nei=1 x.l=1.0 x.h=2.0 layer.width=0.0 |
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+ material num=1 oxide |
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+ material num=2 silicon |
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+ |
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+ elec num=1 x.l=2.5 x.h=3.1 y.l=0.0 y.h=0.0 |
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+ elec num=2 x.l=1.0 x.h=2.0 iy.l=1 iy.h=1 |
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+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 |
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+ elec num=4 x.l=-0.1 x.h=3.1 y.l=2.0 y.h=2.0 |
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+ |
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+ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=3.1 y.l=0.0 |
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+ + char.l=0.30 |
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+ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=3.1 y.l=0.0 y.h=2.1 |
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+ doping gauss n.type conc=4e17 x.l=-0.1 x.h=1.0 y.l=0.0 y.h=0.0 |
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+ + char.l=0.16 lat.rotate ratio=0.65 |
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+ doping gauss n.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 |
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+ + char.l=0.03 lat.rotate ratio=0.65 |
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+ doping gauss n.type conc=4e17 x.l=2.0 x.h=3.1 y.l=0.0 y.h=0.0 |
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+ + char.l=0.16 lat.rotate ratio=0.65 |
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+ doping gauss n.type conc=1e20 x.l=2.05 x.h=3.1 y.l=0.0 y.h=0.08 |
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+ + char.l=0.03 lat.rotate ratio=0.65 |
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+ |
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+ contact num=2 workf=4.10 |
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+ models concmob fieldmob surfmob srh auger conctau bgn ^aval |
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+ method ac=direct itlim=10 onec |
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* .OPTIONS ACCT BYPASS=1 filetype=ascii |
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* .OPTIONS filetype=ascii |
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.END |
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@ -0,0 +1,111 @@ |
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BiCMOS Pulldown Circuit |
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|
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VSS 2 0 0v |
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|
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VIN 3 2 0v (PULSE 0.0v 4.2v 0ns 1ns 1ns 9ns 20ns) |
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|
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M1 8 3 5 11 M_NMOS_1 W=4u L=1u |
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VD 4 8 0v |
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VBK 11 2 0v |
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|
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Q1 10 7 9 M_NPN AREA=8 |
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VC 4 10 0v |
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VB 5 7 0v |
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VE 9 2 0v |
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|
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CL 4 6 1pF |
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VL 6 2 0v |
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|
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.IC V(10)=5.0v V(7)=0.0v |
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*.TRAN 0.1ns 5ns 0ns 0.1ns |
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.TRAN 0.1ns 0.3ns 0ns 0.1ns |
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.PLOT TRAN I(VIN) |
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|
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*.include bicmos.lib |
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.MODEL M_NPN nbjt level=2 |
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+ title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR |
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+ * Since, we are only simulating half of a device, we double the unit width |
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+ * 1.0 um emitter length |
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+ options defw=2.0u |
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+ |
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+ *y.mesh w=2.5 n=5 |
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+ y.mesh w=2.0 h.e=0.05 h.m=0.2 r=1.5 |
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+ y.mesh w=0.5 h.s=0.05 h.m=0.1 r=1.5 |
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+ |
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+ x.mesh l=-0.2 n=1 |
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+ x.mesh l= 0.0 n=5 |
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+ x.mesh w=0.10 h.e=0.002 h.m=0.01 r=1.5 |
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+ x.mesh w=0.15 h.s=0.002 h.m=0.01 r=1.5 |
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+ x.mesh w=0.35 h.s=0.01 h.m=0.2 r=1.5 |
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+ x.mesh w=0.40 h.e=0.05 h.m=0.2 r=1.5 |
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+ x.mesh w=0.30 h.s=0.05 h.m=0.1 r=1.5 |
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+ |
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+ domain num=1 material=1 y.l=2.0 x.h=0.0 |
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+ domain num=2 material=2 y.h=2.0 x.h=0.0 |
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+ domain num=3 material=3 x.l=0.0 |
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+ material num=1 polysilicon |
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+ material num=2 oxide |
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+ material num=3 silicon |
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+ |
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+ elec num=1 y.l=0.0 y.h=0.0 x.l=1.1 x.h=1.3 |
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+ elec num=2 y.l=0.0 y.h=0.5 x.l=0.0 x.h=0.0 |
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+ elec num=3 y.l=2.0 y.h=3.0 x.l=-0.2 x.h=-0.2 |
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+ |
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+ doping gauss n.type conc=3e20 y.l=2.0 y.h=3.0 x.l=-0.2 x.h=0.0 |
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+ + char.l=0.047 lat.rotate |
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+ doping gauss p.type conc=1e19 y.l=0.0 y.h=5.0 x.l=-0.2 x.h=0.0 |
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+ + char.l=0.094 lat.rotate |
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+ doping unif n.type conc=1e16 y.l=0.0 y.h=5.0 x.l=0.0 x.h=1.3 |
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+ doping gauss n.type conc=5e19 y.l=0.0 y.h=5.0 x.l=1.3 x.h=1.3 |
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+ + char.l=0.100 lat.rotate |
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+ |
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+ method ac=direct itlim=10 |
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+ models bgn srh auger conctau concmob fieldmob |
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|
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.MODEL M_NMOS_1 numos |
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+ title 1.0um NMOS Device |
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+ |
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+ y.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 |
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+ y.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 |
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+ y.mesh w=0.4 h.s=0.005 h.m=0.1 r=2.0 |
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+ y.mesh w=0.4 h.e=0.005 h.m=0.1 r=2.0 |
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+ y.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 |
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+ y.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 |
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+ |
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+ x.mesh l=-.0200 n=1 |
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+ x.mesh l=0.0 n=6 |
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+ x.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 |
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+ x.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 |
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+ x.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 |
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+ |
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+ region num=1 material=1 x.h=0.0 |
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+ region num=2 material=2 x.l=0.0 |
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+ interface dom=2 nei=1 y.l=1.0 y.h=2.0 layer.width=0.0 |
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+ material num=1 oxide |
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+ material num=2 silicon |
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+ |
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+ elec num=1 y.l=2.5 y.h=3.1 x.l=0.0 x.h=0.0 |
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+ elec num=2 y.l=1.0 y.h=2.0 ix.l=1 ix.h=1 |
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+ elec num=3 y.l=-0.1 y.h=0.5 x.l=0.0 x.h=0.0 |
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+ elec num=4 y.l=-0.1 y.h=3.1 x.l=2.0 x.h=2.0 |
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+ |
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+ doping gauss p.type conc=1.0e17 y.l=-0.1 y.h=3.1 x.l=0.0 |
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+ + char.l=0.30 |
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+ doping unif p.type conc=5.0e15 y.l=-0.1 y.h=3.1 x.l=0.0 x.h=2.1 |
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+ doping gauss n.type conc=4e17 y.l=-0.1 y.h=1.0 x.l=0.0 x.h=0.0 |
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+ + char.l=0.16 lat.rotate ratio=0.65 |
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+ doping gauss n.type conc=1e20 y.l=-0.1 y.h=0.95 x.l=0.0 x.h=0.08 |
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+ + char.l=0.03 lat.rotate ratio=0.65 |
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+ doping gauss n.type conc=4e17 y.l=2.0 y.h=3.1 x.l=0.0 x.h=0.0 |
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+ + char.l=0.16 lat.rotate ratio=0.65 |
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+ doping gauss n.type conc=1e20 y.l=2.05 y.h=3.1 x.l=0.0 x.h=0.08 |
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+ + char.l=0.03 lat.rotate ratio=0.65 |
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+ |
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+ contact num=2 workf=4.10 |
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+ models concmob fieldmob surfmob srh auger conctau bgn ^aval |
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+ method ac=direct itlim=10 onec |
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|
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|
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* .OPTIONS ACCT BYPASS=1 filetype=ascii |
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* .OPTIONS filetype=ascii |
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.END |
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@ -0,0 +1,105 @@ |
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BICMOS INVERTER PULLUP CIRCUIT |
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VDD 1 0 5.0V |
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VSS 2 0 0.0V |
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VIN 3 0 0.75V |
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VC 1 11 0.0V |
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VB 5 15 0.0V |
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Q1 11 15 4 M_NPNS AREA=8 |
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M1 5 3 1 1 M_PMOS_1 W=10U L=1U |
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CL 4 0 5.0PF |
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.IC V(4)=0.75V V(5)=0.0V |
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|
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.MODEL M_NPNS nbjt level=2 |
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+ title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR |
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+ * Since half the device is simulated, double the unit width to get |
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+ * 1.0 um emitter. Use a small mesh for this model. |
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+ options defw=2.0u |
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+ |
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+ x.mesh w=2.0 h.e=0.02 h.m=0.5 r=2.0 |
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+ x.mesh w=0.5 h.s=0.02 h.m=0.2 r=2.0 |
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+ |
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+ y.mesh l=-0.2 n=1 |
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+ y.mesh l= 0.0 n=5 |
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+ y.mesh w=0.10 h.e=0.004 h.m=0.05 r=2.5 |
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+ y.mesh w=0.15 h.s=0.004 h.m=0.02 r=2.5 |
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+ y.mesh w=1.05 h.s=0.02 h.m=0.1 r=2.5 |
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+ |
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+ domain num=1 material=1 x.l=2.0 y.h=0.0 |
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+ domain num=2 material=2 x.h=2.0 y.h=0.0 |
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+ domain num=3 material=3 y.l=0.0 |
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+ material num=1 polysilicon |
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+ material num=2 oxide |
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+ material num=3 silicon |
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+ |
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+ elec num=1 x.l=0.0 x.h=0.0 y.l=1.1 y.h=1.3 |
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+ elec num=2 x.l=0.0 x.h=0.5 y.l=0.0 y.h=0.0 |
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+ elec num=3 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=-0.2 |
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+ |
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+ doping gauss n.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0 |
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+ + char.l=0.047 lat.rotate |
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+ doping gauss p.type conc=5e18 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0 |
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+ + char.l=0.100 lat.rotate |
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+ doping gauss p.type conc=1e20 x.l=0.0 x.h=0.5 y.l=-0.2 y.h=0.0 |
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+ + char.l=0.100 lat.rotate ratio=0.7 |
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+ doping unif n.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3 |
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+ doping gauss n.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3 |
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+ + char.l=0.100 lat.rotate |
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+ |
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+ method ac=direct itlim=10 |
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+ models bgn srh auger conctau concmob fieldmob |
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|
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.MODEL M_PMOS_1 numos |
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+ |
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+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 |
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+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 |
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+ x.mesh w=0.4 h.s=0.005 h.m=0.1 r=2.0 |
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+ x.mesh w=0.4 h.e=0.005 h.m=0.1 r=2.0 |
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+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 |
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+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 |
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+ |
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+ y.mesh l=-.0200 n=1 |
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+ y.mesh l=0.0 n=6 |
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+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 |
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+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 |
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+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 |
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+ |
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+ region num=1 material=1 y.h=0.0 |
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+ region num=2 material=2 y.l=0.0 |
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+ interface dom=2 nei=1 x.l=1 x.h=2 layer.width=0.0 |
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+ material num=1 oxide |
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+ material num=2 silicon |
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+ |
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+ elec num=1 x.l=2.5 x.h=3.1 y.l=0.0 y.h=0.0 |
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+ elec num=2 x.l=1 x.h=2 iy.l=1 iy.h=1 |
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+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 |
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+ elec num=4 x.l=-0.1 x.h=3.1 y.l=2.0 y.h=2.0 |
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+ |
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+ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=3.1 y.l=0.0 |
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+ + char.l=0.30 |
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+ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=3.1 y.l=0.0 y.h=2.1 |
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+ doping gauss p.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 |
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+ + char.l=0.16 lat.rotate ratio=0.65 |
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+ doping gauss p.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 |
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+ + char.l=0.03 lat.rotate ratio=0.65 |
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+ doping gauss p.type conc=4e17 x.l=2 x.h=3.1 y.l=0.0 y.h=0.0 |
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+ + char.l=0.16 lat.rotate ratio=0.65 |
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+ doping gauss p.type conc=1e20 x.l=2.05 x.h=3.1 y.l=0.0 y.h=0.08 |
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+ + char.l=0.03 lat.rotate ratio=0.65 |
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+ |
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+ contact num=2 workf=5.29 |
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+ models concmob surfmob transmob fieldmob srh auger conctau bgn |
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+ method ac=direct itlim=10 onec |
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|
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|
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.TRAN 0.5NS 3.0NS |
|||
.PRINT TRAN V(3) V(4) |
|||
.PLOT TRAN V(3) V(4) |
|||
|
|||
* .OPTION ACCT BYPASS=1 |
|||
.END |
|||
@ -0,0 +1,105 @@ |
|||
BICMOS INVERTER PULLUP CIRCUIT |
|||
|
|||
VDD 1 0 5.0V |
|||
VSS 2 0 0.0V |
|||
|
|||
VIN 3 0 0.75V |
|||
|
|||
VC 1 11 0.0V |
|||
VB 5 15 0.0V |
|||
|
|||
Q1 11 15 4 M_NPNS AREA=8 |
|||
M1 5 3 1 1 M_PMOS_1 W=10U L=1U |
|||
|
|||
CL 4 0 5.0PF |
|||
|
|||
.IC V(4)=0.75V V(5)=0.0V |
|||
|
|||
.MODEL M_NPNS nbjt level=2 |
|||
+ title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR |
|||
+ * Since half the device is simulated, double the unit width to get |
|||
+ * 1.0 um emitter. Use a small mesh for this model. |
|||
+ options defw=2.0u |
|||
+ |
|||
+ x.mesh w=2.0 h.e=0.02 h.m=0.5 r=2.0 |
|||
+ x.mesh w=0.5 h.s=0.02 h.m=0.2 r=2.0 |
|||
+ |
|||
+ y.mesh l=-0.2 n=1 |
|||
+ y.mesh l= 0.0 n=5 |
|||
+ y.mesh w=0.10 h.e=0.004 h.m=0.05 r=2.5 |
|||
+ y.mesh w=0.15 h.s=0.004 h.m=0.02 r=2.5 |
|||
+ y.mesh w=1.05 h.s=0.02 h.m=0.1 r=2.5 |
|||
+ |
|||
+ domain num=1 material=1 x.l=2.0 y.h=0.0 |
|||
+ domain num=2 material=2 x.h=2.0 y.h=0.0 |
|||
+ domain num=3 material=3 y.l=0.0 |
|||
+ material num=1 polysilicon |
|||
+ material num=2 oxide |
|||
+ material num=3 silicon |
|||
+ |
|||
+ elec num=1 x.l=0.0 x.h=0.0 y.l=1.1 y.h=1.3 |
|||
+ elec num=2 x.l=0.0 x.h=0.5 y.l=0.0 y.h=0.0 |
|||
+ elec num=3 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=-0.2 |
|||
+ |
|||
+ doping gauss n.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0 |
|||
+ + char.l=0.047 lat.rotate |
|||
+ doping gauss p.type conc=5e18 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0 |
|||
+ + char.l=0.100 lat.rotate |
|||
+ doping gauss p.type conc=1e20 x.l=0.0 x.h=0.5 y.l=-0.2 y.h=0.0 |
|||
+ + char.l=0.100 lat.rotate ratio=0.7 |
|||
+ doping unif n.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3 |
|||
+ doping gauss n.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3 |
|||
+ + char.l=0.100 lat.rotate |
|||
+ |
|||
+ method ac=direct itlim=10 |
|||
+ models bgn srh auger conctau concmob fieldmob |
|||
|
|||
.MODEL M_PMOS_1 numos |
|||
+ |
|||
+ y.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 |
|||
+ y.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 |
|||
+ y.mesh w=0.4 h.s=0.005 h.m=0.1 r=2.0 |
|||
+ y.mesh w=0.4 h.e=0.005 h.m=0.1 r=2.0 |
|||
+ y.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 |
|||
+ y.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 |
|||
+ |
|||
+ x.mesh l=-.0200 n=1 |
|||
+ x.mesh l=0.0 n=6 |
|||
+ x.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 |
|||
+ x.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 |
|||
+ x.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 |
|||
+ |
|||
+ region num=1 material=1 x.h=0.0 |
|||
+ region num=2 material=2 x.l=0.0 |
|||
+ interface dom=2 nei=1 y.l=1 y.h=2 layer.width=0.0 |
|||
+ material num=1 oxide |
|||
+ material num=2 silicon |
|||
+ |
|||
+ elec num=1 y.l=2.5 y.h=3.1 x.l=0.0 x.h=0.0 |
|||
+ elec num=2 y.l=1 y.h=2 ix.l=1 ix.h=1 |
|||
+ elec num=3 y.l=-0.1 y.h=0.5 x.l=0.0 x.h=0.0 |
|||
+ elec num=4 y.l=-0.1 y.h=3.1 x.l=2.0 x.h=2.0 |
|||
+ |
|||
+ doping gauss n.type conc=1.0e17 y.l=-0.1 y.h=3.1 x.l=0.0 |
|||
+ + char.l=0.30 |
|||
+ doping unif n.type conc=5.0e15 y.l=-0.1 y.h=3.1 x.l=0.0 x.h=2.1 |
|||
+ doping gauss p.type conc=4e17 y.l=-0.1 y.h=1 x.l=0.0 x.h=0.0 |
|||
+ + char.l=0.16 lat.rotate ratio=0.65 |
|||
+ doping gauss p.type conc=1e20 y.l=-0.1 y.h=0.95 x.l=0.0 x.h=0.08 |
|||
+ + char.l=0.03 lat.rotate ratio=0.65 |
|||
+ doping gauss p.type conc=4e17 y.l=2 y.h=3.1 x.l=0.0 x.h=0.0 |
|||
+ + char.l=0.16 lat.rotate ratio=0.65 |
|||
+ doping gauss p.type conc=1e20 y.l=2.05 y.h=3.1 x.l=0.0 x.h=0.08 |
|||
+ + char.l=0.03 lat.rotate ratio=0.65 |
|||
+ |
|||
+ contact num=2 workf=5.29 |
|||
+ models concmob surfmob transmob fieldmob srh auger conctau bgn |
|||
+ method ac=direct itlim=10 onec |
|||
|
|||
|
|||
.TRAN 0.5NS 3.0NS |
|||
.PRINT TRAN V(3) V(4) |
|||
.PLOT TRAN V(3) V(4) |
|||
|
|||
* .OPTION ACCT BYPASS=1 |
|||
.END |
|||
@ -0,0 +1,159 @@ |
|||
$ CD4007, version: cd4007n_200402idvg |
|||
$ Generated using Matlab automation script. |
|||
|
|||
|
|||
$ BEGIN CIDER |
|||
|
|||
.model CD4007UBENUMOSN numos |
|||
$ -- x Grid |
|||
$ ---- GOX |
|||
+ x.mesh (location = -64.0000e-3) (node = 1) |
|||
+ x.mesh (location = -48.0000e-3) (node = 2) |
|||
+ x.mesh (location = -32.0000e-3) (node = 3) |
|||
+ x.mesh (location = -16.0000e-3) (node = 4) |
|||
+ x.mesh (location = 0.0000e-3) (node = 5) |
|||
$ ---- Channel and S/D |
|||
+ x.mesh (location = 20.0000e-3) (node = 6) |
|||
+ x.mesh (location = 48.4511e-3) (node = 7) |
|||
+ x.mesh (location = 86.9893e-3) (node = 8) |
|||
+ x.mesh (location = 139.1911e-3) (node = 9) |
|||
+ x.mesh (location = 209.9008e-3) (node = 10) |
|||
+ x.mesh (location = 305.6803e-3) (node = 11) |
|||
+ x.mesh (location = 435.4180e-3) (node = 12) |
|||
+ x.mesh (location = 611.1537e-3) (node = 13) |
|||
+ x.mesh (location = 849.1956e-3) (node = 14) |
|||
+ x.mesh (location = 1171.6341e-3) (node = 15) |
|||
+ x.mesh (location = 1608.3918e-3) (node = 16) |
|||
+ x.mesh (location = 2200.0000e-3) (node = 17) |
|||
+ x.mesh (location = 3000.0000e-3) (node = 18) |
|||
$ ---- Mid substrate |
|||
+ x.mesh (location = 3800.0000e-3) (node = 19) |
|||
+ x.mesh (location = 4911.8170e-3) (node = 20) |
|||
+ x.mesh (location = 6290.4701e-3) (node = 21) |
|||
+ x.mesh (location = 8000.0000e-3) (node = 22) |
|||
+ x.mesh (location = 10000.0000e-3) (node = 23) |
|||
+ |
|||
$ -- y Grid |
|||
$ ---- Body well |
|||
+ y.mesh (location = -35000.0000e-3) (node = 1) |
|||
+ y.mesh (location = -30000.0000e-3) (node = 2) |
|||
+ y.mesh (location = -25000.0000e-3) (node = 3) |
|||
+ y.mesh (location = -20000.0000e-3) (node = 4) |
|||
$ ---- Body-Source |
|||
+ y.mesh (location = -17500.0000e-3) (node = 5) |
|||
+ y.mesh (location = -15000.0000e-3) (node = 6) |
|||
+ y.mesh (location = -12500.0000e-3) (node = 7) |
|||
+ y.mesh (location = -10000.0000e-3) (node = 8) |
|||
$ ---- Mid source |
|||
+ y.mesh (location = -7500.0000e-3) (node = 9) |
|||
+ y.mesh (location = -4980.0000e-3) (node = 10) |
|||
+ y.mesh (location = -3000.0000e-3) (node = 11) |
|||
+ y.mesh (location = -2000.0000e-3) (node = 12) |
|||
$ ---- Near source |
|||
+ y.mesh (location = -1000.0000e-3) (node = 13) |
|||
+ y.mesh (location = -200.0000e-3) (node = 14) |
|||
+ y.mesh (location = 0.0000e-3) (node = 15) |
|||
$ ---- Channel near source |
|||
+ y.mesh (location = 200.0000e-3) (node = 16) |
|||
+ y.mesh (location = 442.1759e-3) (node = 17) |
|||
+ y.mesh (location = 732.7869e-3) (node = 18) |
|||
+ y.mesh (location = 1081.5201e-3) (node = 19) |
|||
+ y.mesh (location = 1500.0000e-3) (node = 20) |
|||
+ y.mesh (location = 2000.0000e-3) (node = 21) |
|||
$ ---- Channel center |
|||
+ y.mesh (location = 2500.0000e-3) (node = 22) |
|||
+ y.mesh (location = 3000.0000e-3) (node = 23) |
|||
+ y.mesh (location = 3500.0000e-3) (node = 24) |
|||
+ y.mesh (location = 4000.0000e-3) (node = 25) |
|||
+ y.mesh (location = 4500.0000e-3) (node = 26) |
|||
+ y.mesh (location = 5000.0000e-3) (node = 27) |
|||
$ ---- Channel near drain |
|||
+ y.mesh (location = 5500.0000e-3) (node = 28) |
|||
+ y.mesh (location = 5961.8362e-3) (node = 29) |
|||
+ y.mesh (location = 6376.3046e-3) (node = 30) |
|||
+ y.mesh (location = 6748.2634e-3) (node = 31) |
|||
+ y.mesh (location = 7082.0725e-3) (node = 32) |
|||
+ y.mesh (location = 7381.6449e-3) (node = 33) |
|||
+ y.mesh (location = 7650.4919e-3) (node = 34) |
|||
+ y.mesh (location = 7891.7648e-3) (node = 35) |
|||
+ y.mesh (location = 8108.2918e-3) (node = 36) |
|||
+ y.mesh (location = 8302.6109e-3) (node = 37) |
|||
+ y.mesh (location = 8476.9998e-3) (node = 38) |
|||
+ y.mesh (location = 8633.5027e-3) (node = 39) |
|||
+ y.mesh (location = 8773.9540e-3) (node = 40) |
|||
+ y.mesh (location = 8900.0000e-3) (node = 41) |
|||
+ y.mesh (location = 9000.0000e-3) (node = 42) |
|||
$ ---- Near drain |
|||
+ y.mesh (location = 9200.0000e-3) (node = 43) |
|||
+ y.mesh (location = 9612.8440e-3) (node = 44) |
|||
+ y.mesh (location = 10190.8257e-3) (node = 45) |
|||
+ y.mesh (location = 11000.0000e-3) (node = 46) |
|||
+ y.mesh (location = 12000.0000e-3) (node = 47) |
|||
$ ---- Mid drain |
|||
+ y.mesh (location = 13000.0000e-3) (node = 48) |
|||
+ y.mesh (location = 15500.0000e-3) (node = 49) |
|||
+ y.mesh (location = 18000.0000e-3) (node = 50) |
|||
+ |
|||
$ -- Regions |
|||
$ ---- substrate |
|||
+ region (num=1 material=1) x.l = 0.0000e-3 |
|||
$ ---- GOX |
|||
+ region (num=2 material=2) x.h = 0.0000e-3 |
|||
+ |
|||
$ -- Materials |
|||
+ material num=1 silicon |
|||
+ mobility material=1 concmod=sg fieldmod=sg |
|||
+ Mobility Material=1 elec major MuMax=1200.0 MuMin=200.0 Vsat=3.2e7 |
|||
+ Mobility Material=1 elec MuS=600.0 EC.A=3.0e5 |
|||
+ mobility material=1 elec minor MuMax=1200.0 MuMin=200.0 |
|||
+ mobility material=1 hole major |
|||
+ mobility material=1 hole minor |
|||
+ material num=2 oxide |
|||
+ |
|||
$ -- Contacts and workfunction |
|||
$ ---- Drain |
|||
+ elec num=1 (x.l = 0.0000e-3 x.h = 0.0000e-3) (y.l = 12000.0000e-3 y.h = 16000.0000e-3) |
|||
$ ---- Gate contact |
|||
+ elec num=2 (x.l = -64.0000e-3 x.h = -64.0000e-3) (y.l = 0.0000e-3 y.h = 9000.0000e-3) |
|||
$ ---- Source |
|||
+ elec num=3 (x.l = 0.0000e-3 x.h = 0.0000e-3) (y.l = -6000.0000e-3 y.h = -3000.0000e-3) |
|||
$ ---- Body |
|||
+ elec num=4 (x.l = 0.0000e-3 x.h = 0.0000e-3) (y.l = -30000.0000e-3 y.h = -25000.0000e-3) |
|||
+ contact num=1 workf=4.0500 |
|||
+ contact num=2 workf=4.0500 |
|||
+ contact num=3 workf=4.0500 |
|||
+ contact num=4 workf=5.1700 |
|||
+ |
|||
$ -- Doping profiles |
|||
$ ---- p subs |
|||
+ doping Domains = 1 Uniform P.Type Conc = 1e16 |
|||
$ ---- Threshold Adjustment Diffuse |
|||
+ doping Domains = 1 Gaussian Lat.Erfc X.Axis P.Type x.l=0.0 x.h=0.5 y.l=-0 y.h=10 Peak.Conc=2e16 Location=0.1 Char.Length=0.8 Ratio.Lat=0.8 |
|||
$ ---- Body Diffuse |
|||
+ doping Domains = 1 Gaussian Lat.Erfc X.Axis P.Type x.l=0.0 x.h=3.0 y.l=-30 y.h=-20 Peak.Conc=2e20 Location=0 Char.Length=0.6 Ratio.Lat=0.8 |
|||
$ ---- Source Diffuse |
|||
+ doping Domains = 1 Gaussian Lat.Erfc X.Axis N.Type x.l=0.0 x.h=3.0 y.l=-10 y.h=0 Peak.Conc=2e20 Location=0 Char.Length=0.6 Ratio.Lat=0.8 |
|||
$ ---- Drain Diffuse |
|||
+ doping Domains = 1 Gaussian Lat.Erfc X.Axis N.Type x.l=0.0 x.h=3.0 y.l=9.0 y.h=18.0 Peak.Conc=2e20 Location=0 Char.Length=0.6 Ratio.Lat=0.8 |
|||
+ |
|||
+ models concmob fieldmob |
|||
+ method ac=direct ^onec |
|||
+ |
|||
+ interface domain=1 neighbor=2 y.l=0 y.h=8.0 layer.width=0.5 |
|||
+ models surfmob transmob ^matchmob |
|||
|
|||
$ Total grid points X23 x Y50 = 1150 |
|||
|
|||
$ END OF CIDER |
|||
|
|||
|
|||
$ PSPICE Schematics Netlist |
|||
VId VPP VDD 0 |
|||
MN1 VDD VGG 0 0 CD4007UBENUMOSN w=298u |
|||
* .save i(VId) * |
|||
VVDS VPP 0 DC 0 |
|||
VVGS VGG 0 DC 0 |
|||
.dc VVGS 0.00 5.00 0.25 VVDS 0.05 0.05 0.50 |
|||
$ VGS x VDS sweep points: 51 x 1 = 51 |
|||
.print dc VPP VGG VPP |
|||
.end |
|||
@ -0,0 +1,159 @@ |
|||
$ CD4007, version: cd4007n_200402idvg |
|||
$ Generated using Matlab automation script. |
|||
|
|||
|
|||
$ BEGIN CIDER |
|||
|
|||
.model CD4007UBENUMOSN numos |
|||
$ -- y Grid |
|||
$ ---- GOX |
|||
+ y.mesh (location = -64.0000e-3) (node = 1) |
|||
+ y.mesh (location = -48.0000e-3) (node = 2) |
|||
+ y.mesh (location = -32.0000e-3) (node = 3) |
|||
+ y.mesh (location = -16.0000e-3) (node = 4) |
|||
+ y.mesh (location = 0.0000e-3) (node = 5) |
|||
$ ---- Channel and S/D |
|||
+ y.mesh (location = 20.0000e-3) (node = 6) |
|||
+ y.mesh (location = 48.4511e-3) (node = 7) |
|||
+ y.mesh (location = 86.9893e-3) (node = 8) |
|||
+ y.mesh (location = 139.1911e-3) (node = 9) |
|||
+ y.mesh (location = 209.9008e-3) (node = 10) |
|||
+ y.mesh (location = 305.6803e-3) (node = 11) |
|||
+ y.mesh (location = 435.4180e-3) (node = 12) |
|||
+ y.mesh (location = 611.1537e-3) (node = 13) |
|||
+ y.mesh (location = 849.1956e-3) (node = 14) |
|||
+ y.mesh (location = 1171.6341e-3) (node = 15) |
|||
+ y.mesh (location = 1608.3918e-3) (node = 16) |
|||
+ y.mesh (location = 2200.0000e-3) (node = 17) |
|||
+ y.mesh (location = 3000.0000e-3) (node = 18) |
|||
$ ---- Mid substrate |
|||
+ y.mesh (location = 3800.0000e-3) (node = 19) |
|||
+ y.mesh (location = 4911.8170e-3) (node = 20) |
|||
+ y.mesh (location = 6290.4701e-3) (node = 21) |
|||
+ y.mesh (location = 8000.0000e-3) (node = 22) |
|||
+ y.mesh (location = 10000.0000e-3) (node = 23) |
|||
+ |
|||
$ -- x Grid |
|||
$ ---- Body well |
|||
+ x.mesh (location = -35000.0000e-3) (node = 1) |
|||
+ x.mesh (location = -30000.0000e-3) (node = 2) |
|||
+ x.mesh (location = -25000.0000e-3) (node = 3) |
|||
+ x.mesh (location = -20000.0000e-3) (node = 4) |
|||
$ ---- Body-Source |
|||
+ x.mesh (location = -17500.0000e-3) (node = 5) |
|||
+ x.mesh (location = -15000.0000e-3) (node = 6) |
|||
+ x.mesh (location = -12500.0000e-3) (node = 7) |
|||
+ x.mesh (location = -10000.0000e-3) (node = 8) |
|||
$ ---- Mid source |
|||
+ x.mesh (location = -7500.0000e-3) (node = 9) |
|||
+ x.mesh (location = -4980.0000e-3) (node = 10) |
|||
+ x.mesh (location = -3000.0000e-3) (node = 11) |
|||
+ x.mesh (location = -2000.0000e-3) (node = 12) |
|||
$ ---- Near source |
|||
+ x.mesh (location = -1000.0000e-3) (node = 13) |
|||
+ x.mesh (location = -200.0000e-3) (node = 14) |
|||
+ x.mesh (location = 0.0000e-3) (node = 15) |
|||
$ ---- Channel near source |
|||
+ x.mesh (location = 200.0000e-3) (node = 16) |
|||
+ x.mesh (location = 442.1759e-3) (node = 17) |
|||
+ x.mesh (location = 732.7869e-3) (node = 18) |
|||
+ x.mesh (location = 1081.5201e-3) (node = 19) |
|||
+ x.mesh (location = 1500.0000e-3) (node = 20) |
|||
+ x.mesh (location = 2000.0000e-3) (node = 21) |
|||
$ ---- Channel center |
|||
+ x.mesh (location = 2500.0000e-3) (node = 22) |
|||
+ x.mesh (location = 3000.0000e-3) (node = 23) |
|||
+ x.mesh (location = 3500.0000e-3) (node = 24) |
|||
+ x.mesh (location = 4000.0000e-3) (node = 25) |
|||
+ x.mesh (location = 4500.0000e-3) (node = 26) |
|||
+ x.mesh (location = 5000.0000e-3) (node = 27) |
|||
$ ---- Channel near drain |
|||
+ x.mesh (location = 5500.0000e-3) (node = 28) |
|||
+ x.mesh (location = 5961.8362e-3) (node = 29) |
|||
+ x.mesh (location = 6376.3046e-3) (node = 30) |
|||
+ x.mesh (location = 6748.2634e-3) (node = 31) |
|||
+ x.mesh (location = 7082.0725e-3) (node = 32) |
|||
+ x.mesh (location = 7381.6449e-3) (node = 33) |
|||
+ x.mesh (location = 7650.4919e-3) (node = 34) |
|||
+ x.mesh (location = 7891.7648e-3) (node = 35) |
|||
+ x.mesh (location = 8108.2918e-3) (node = 36) |
|||
+ x.mesh (location = 8302.6109e-3) (node = 37) |
|||
+ x.mesh (location = 8476.9998e-3) (node = 38) |
|||
+ x.mesh (location = 8633.5027e-3) (node = 39) |
|||
+ x.mesh (location = 8773.9540e-3) (node = 40) |
|||
+ x.mesh (location = 8900.0000e-3) (node = 41) |
|||
+ x.mesh (location = 9000.0000e-3) (node = 42) |
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$ ---- Near drain |
|||
+ x.mesh (location = 9200.0000e-3) (node = 43) |
|||
+ x.mesh (location = 9612.8440e-3) (node = 44) |
|||
+ x.mesh (location = 10190.8257e-3) (node = 45) |
|||
+ x.mesh (location = 11000.0000e-3) (node = 46) |
|||
+ x.mesh (location = 12000.0000e-3) (node = 47) |
|||
$ ---- Mid drain |
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+ x.mesh (location = 13000.0000e-3) (node = 48) |
|||
+ x.mesh (location = 15500.0000e-3) (node = 49) |
|||
+ x.mesh (location = 18000.0000e-3) (node = 50) |
|||
+ |
|||
$ -- Regions |
|||
$ ---- substrate |
|||
+ region (num=1 material=1) y.l = 0.0000e-3 |
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$ ---- GOX |
|||
+ region (num=2 material=2) y.h = 0.0000e-3 |
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+ |
|||
$ -- Materials |
|||
+ material num=1 silicon |
|||
+ mobility material=1 concmod=sg fieldmod=sg |
|||
+ Mobility Material=1 elec major MuMax=1200.0 MuMin=200.0 Vsat=3.2e7 |
|||
+ Mobility Material=1 elec MuS=600.0 EC.A=3.0e5 |
|||
+ mobility material=1 elec minor MuMax=1200.0 MuMin=200.0 |
|||
+ mobility material=1 hole major |
|||
+ mobility material=1 hole minor |
|||
+ material num=2 oxide |
|||
+ |
|||
$ -- Contacts and workfunction |
|||
$ ---- Drain |
|||
+ elec num=1 (y.l = 0.0000e-3 y.h = 0.0000e-3) (x.l = 12000.0000e-3 x.h = 16000.0000e-3) |
|||
$ ---- Gate contact |
|||
+ elec num=2 (y.l = -64.0000e-3 y.h = -64.0000e-3) (x.l = 0.0000e-3 x.h = 9000.0000e-3) |
|||
$ ---- Source |
|||
+ elec num=3 (y.l = 0.0000e-3 y.h = 0.0000e-3) (x.l = -6000.0000e-3 x.h = -3000.0000e-3) |
|||
$ ---- Body |
|||
+ elec num=4 (y.l = 0.0000e-3 y.h = 0.0000e-3) (x.l = -30000.0000e-3 x.h = -25000.0000e-3) |
|||
+ contact num=1 workf=4.0500 |
|||
+ contact num=2 workf=4.0500 |
|||
+ contact num=3 workf=4.0500 |
|||
+ contact num=4 workf=5.1700 |
|||
+ |
|||
$ -- Doping profiles |
|||
$ ---- p subs |
|||
+ doping Domains = 1 Uniform P.Type Conc = 1e16 |
|||
$ ---- Threshold Adjustment Diffuse |
|||
+ doping Domains = 1 Gaussian Lat.Erfc Y.Axis P.Type y.l=0.0 y.h=0.5 x.l=-0 x.h=10 Peak.Conc=2e16 Location=0.1 Char.Length=0.8 Ratio.Lat=0.8 |
|||
$ ---- Body Diffuse |
|||
+ doping Domains = 1 Gaussian Lat.Erfc Y.Axis P.Type y.l=0.0 y.h=3.0 x.l=-30 x.h=-20 Peak.Conc=2e20 Location=0 Char.Length=0.6 Ratio.Lat=0.8 |
|||
$ ---- Source Diffuse |
|||
+ doping Domains = 1 Gaussian Lat.Erfc Y.Axis N.Type y.l=0.0 y.h=3.0 x.l=-10 x.h=0 Peak.Conc=2e20 Location=0 Char.Length=0.6 Ratio.Lat=0.8 |
|||
$ ---- Drain Diffuse |
|||
+ doping Domains = 1 Gaussian Lat.Erfc Y.Axis N.Type y.l=0.0 y.h=3.0 x.l=9.0 x.h=18.0 Peak.Conc=2e20 Location=0 Char.Length=0.6 Ratio.Lat=0.8 |
|||
+ |
|||
+ models concmob fieldmob |
|||
+ method ac=direct ^onec |
|||
+ |
|||
+ interface domain=1 neighbor=2 x.l=0 x.h=8.0 layer.width=0.5 |
|||
+ models surfmob transmob ^matchmob |
|||
|
|||
$ Total grid points X23 x Y50 = 1150 |
|||
|
|||
$ END OF CIDER |
|||
|
|||
|
|||
$ PSPICE Schematics Netlist |
|||
VId VPP VDD 0 |
|||
MN1 VDD VGG 0 0 CD4007UBENUMOSN w=298u |
|||
* .save i(VId) * |
|||
VVDS VPP 0 DC 0 |
|||
VVGS VGG 0 DC 0 |
|||
.dc VVGS 0.00 5.00 0.25 VVDS 0.05 0.05 0.50 |
|||
$ VGS x VDS sweep points: 51 x 1 = 51 |
|||
.print dc VPP VGG VPP |
|||
.end |
|||
@ -0,0 +1,9 @@ |
|||
#!/bin/sh |
|||
set -xv |
|||
|
|||
ngspice -b cd4007n_200402idvg.net |
|||
ngspice -b cdxy.net |
|||
ngspice -b Tbicmpd1.cir |
|||
ngspice -b Tbicmpd1xy.cir |
|||
ngspice -b Tbicmpu1.cir |
|||
ngspice -b Tbicmpu1xy.cir |
|||
@ -0,0 +1,2 @@ |
|||
option klu |
|||
set numdgt=3 |
|||
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