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@ -302,6 +302,7 @@ typedef struct sDIOmodel { /* model structure for a diode */ |
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unsigned DIOpolyOxideThickGiven : 1; /* Thickness of the polysilicon to bulk oxide (level=3) */ |
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unsigned DIOpolyOxideThickGiven : 1; /* Thickness of the polysilicon to bulk oxide (level=3) */ |
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unsigned DIOmetalMaskOffsetGiven : 1; /* Masking and etching effects in metal (level=3)") */ |
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unsigned DIOmetalMaskOffsetGiven : 1; /* Masking and etching effects in metal (level=3)") */ |
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unsigned DIOpolyMaskOffsetGiven : 1; /* Masking and etching effects in polysilicon (level=3) */ |
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unsigned DIOpolyMaskOffsetGiven : 1; /* Masking and etching effects in polysilicon (level=3) */ |
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unsigned DIOmaskOffsetGiven : 1; /* Masking and etching effects (level=3) */ |
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int DIOlevel; /* level selector */ |
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int DIOlevel; /* level selector */ |
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double DIOsatCur; /* saturation current */ |
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double DIOsatCur; /* saturation current */ |
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@ -372,6 +373,7 @@ typedef struct sDIOmodel { /* model structure for a diode */ |
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double DIOpolyOxideThick; /* Thickness of the polysilicon to bulk oxide (level=3) */ |
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double DIOpolyOxideThick; /* Thickness of the polysilicon to bulk oxide (level=3) */ |
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double DIOmetalMaskOffset; /* Masking and etching effects in metal (level=3)") */ |
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double DIOmetalMaskOffset; /* Masking and etching effects in metal (level=3)") */ |
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double DIOpolyMaskOffset; /* Masking and etching effects in polysilicon (level=3) */ |
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double DIOpolyMaskOffset; /* Masking and etching effects in polysilicon (level=3) */ |
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double DIOmaskOffset; /* Masking and etching effects (level=3) */ |
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} DIOmodel; |
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} DIOmodel; |
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@ -474,6 +476,7 @@ enum { |
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DIO_MOD_XOI, |
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DIO_MOD_XOI, |
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DIO_MOD_XM, |
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DIO_MOD_XM, |
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DIO_MOD_XP, |
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DIO_MOD_XP, |
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DIO_MOD_XW, |
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}; |
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}; |
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void DIOtempUpdate(DIOmodel *inModel, DIOinstance *here, double Temp, CKTcircuit *ckt); |
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void DIOtempUpdate(DIOmodel *inModel, DIOinstance *here, double Temp, CKTcircuit *ckt); |
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