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enable OP information for hicum0 and mextram

pre-master-46
Holger Vogt 5 years ago
parent
176023f470
commit
8a21f6f2c0
4 changed files with 256 additions and 242 deletions
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  1. 19
      src/spicelib/devices/adms/hicum0/admsva/hicum0.va
  2. 5
      src/spicelib/devices/adms/mextram/admsva/frontdef.inc
  3. 121
      src/spicelib/devices/adms/mextram/admsva/initialize.inc
  4. 353
      src/spicelib/devices/adms/mextram/admsva/opinfo.inc

19
src/spicelib/devices/adms/hicum0/admsva/hicum0.va
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@ -141,7 +141,7 @@ organization and externally, subject to the following restrictions.
`include "discipline.h"
// Comment this line, if calculation of operating point values should be omitted
//`define CALC_OP
`define CALC_OP
// Comment this line, if calculation of noise analysis should be omitted
//`define CALC_NOISE
@ -1139,7 +1139,7 @@ module hic0_full (c,b,e,s,tnode);
if (flsh == 0 || rth < `MIN_R) begin
I(br_sht) <+ Vrth/`MIN_R;
end else begin
I(br_sht) <+ Vrth/rth-pterm; //`P(spectre:gmin="add");
I(br_sht) <+ Vrth/rth_t-pterm; //`P(spectre:gmin="add");
I(br_sht) <+ ddt(cth*Vrth);
end
// ******************************************
@ -1192,14 +1192,18 @@ module hic0_full (c,b,e,s,tnode);
`ifdef CALC_OP
if (analysis("static")) begin : OP_calculation
// if (analysis("static")) begin : OP_calculation
begin : OP_calculation
real oRPIi, oRMUi, oROi, gAVL;
real Cdei, Cdci, Cjei, Cjci, Cjcx, CBC;
real R_tot;
IB = I(<b>);
IC = I(<c>);
ISUB = I(<s>);
// IB = I(<b>);
// IC = I(<c>);
// ISUB = I(<s>);
IB = ibe;
IC = it;
ISUB = ijsc;
IAVL = iavl;
VBE = V(b,e);
@ -1207,7 +1211,8 @@ module hic0_full (c,b,e,s,tnode);
VCE = V(c,e);
VSC = V(s,c);
GMi = ddx(it_wop,V(bi));
// GMi = ddx(it_wop,V(bi));
GMi = ddx(it,V(bi));
oRPIi = ddx(ijbe,V(bi));
RPIi = 1.0/(oRPIi+1e-12);

5
src/spicelib/devices/adms/mextram/admsva/frontdef.inc
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@ -23,8 +23,11 @@
`define VEXLIM 400.0
`define PI 3.1415926
`define NGSPICE_ADMS
// Desriptions and units
`ifdef __VAMS_COMPACT_MODELING__
//`ifdef __VAMS_COMPACT_MODELING__
`ifdef NGSPICE_ADMS
`define OPP(nam,uni,des) (* desc="des", units="uni" *) real nam;
`define PAR(des,uni) (* desc="des", units="uni" *) parameter real
`define PAI(des,uni) (* desc="des", units="uni" *) parameter integer

121
src/spicelib/devices/adms/mextram/admsva/initialize.inc
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@ -9,80 +9,81 @@ else
my_gmin = $simparam("gmin");
// Initialize model constants
`INITIAL_INSTANCE
begin
// Impact ionization constants (NPN - PNP)
// Impact ionization constants (NPN - PNP)
if (TYPE == 1) begin
if (TYPE == 1) begin
An = 7.03e7;
Bn = 1.23e8;
An = 7.03e7;
Bn = 1.23e8;
end else begin
end else begin
An = 1.58e8;
Bn = 2.04e8;
An = 1.58e8;
Bn = 2.04e8;
end
end
Xext1 = 1.0 - XEXT;
Xext1 = 1.0 - XEXT;
// Temperature independent MULT scaling
// Temperature independent MULT scaling
`ifdef SELFHEATING
CTH_M = CTH * MULT;
`endif
CBEO_M = CBEO * MULT;
CBCO_M = CBCO * MULT;
invMULT = 1.0 / MULT;
SCRCV_M = SCRCV * invMULT;
KF_M = KF * pow(MULT, 1.0 - AF);
KFN_M = KFN * pow(MULT, 1.0 - (2.0 * (MLF - 1.0) + AF * (2.0 - MLF)));
// begin: RvdT, November 2008; Zener tunneling current model
pow2_2mPE = pow(2.0, 2.0 - PE);
pow2_PEm2 = 1.0 / pow2_2mPE;
// Reference Temperature expressed in Kelvin:
Trk = TREF + `C2K;
// Ambient Temperature expressed in Kelvin:
Tamb = $temperature + DTA;
// begin: RvdT, November 2008; Zener tunneling current model
//
// Comment added March 2009: this assumes VGZEBOK as a model parameter.
//
// Bandgap for Zener tunnel current model at reference temperature in eV:
// VGZEB_Tr = VGZEBOK - AVGEB*Trk*Trk / (Trk + TVGEB);
// `max_logexp(VGZEB_Tr, VGZEBOK - AVGEB*Trk*Trk / (Trk + TVGEB), 0.05, 0.1);
// end: RvdT, November 2008
// begin: RvdT March 2009:
// to decrease parameter interdependency,
// use VGZEB as a parameter, instead of VGZEBOK:
// VGZEB : bandgap for Zener tunneling at T = Tref,
// VGZEBOK : bandgap for Zener tunneling at T = 0 K.
//`max_logexp(VGZEBOK, VGZEB + AVGEB*Trk*Trk / (Trk + TVGEB), 0.05, 0.1);
//dw admsXml can't expand the macro `max_logexp here - using the code
_x = VGZEB + AVGEB*Trk*Trk / (Trk + TVGEB);
_x0 = 0.05;
_a = 0.1;
_dxa = (_x - _x0) / (_a);
if (_x < _x0)
VGZEBOK = _x0 + _a * ln(1.0 + exp(_dxa));
else
VGZEBOK = _x + _a * ln(1.0 + exp(-_dxa));
CBEO_M = CBEO * MULT;
CBCO_M = CBCO * MULT;
invMULT = 1.0 / MULT;
SCRCV_M = SCRCV * invMULT;
KF_M = KF * pow(MULT, 1.0 - AF);
KFN_M = KFN * pow(MULT, 1.0 - (2.0 * (MLF - 1.0) + AF * (2.0 - MLF)));
// begin: RvdT, November 2008; Zener tunneling current model
VGZEB_Tr = VGZEB;
// end: RvdT March 2009: use VGZEB as a parameter, instead of VGZEBOK:
pow2_2mPE = pow(2.0, 2.0 - PE);
pow2_PEm2 = 1.0 / pow2_2mPE;
inv_VGZEB_Tr = 1.0 / VGZEB_Tr;
// Reference Temperature expressed in Kelvin:
Trk = TREF + `C2K;
// Ambient Temperature expressed in Kelvin:
Tamb = $temperature + DTA;
inv_VDE = 1.0 / VDE;
// end: RvdT, November 2008; Zener tunneling current model
// begin: RvdT, November 2008; Zener tunneling current model
//
// Comment added March 2009: this assumes VGZEBOK as a model parameter.
//
// Bandgap for Zener tunnel current model at reference temperature in eV:
// VGZEB_Tr = VGZEBOK - AVGEB*Trk*Trk / (Trk + TVGEB);
// `max_logexp(VGZEB_Tr, VGZEBOK - AVGEB*Trk*Trk / (Trk + TVGEB), 0.05, 0.1);
// end: RvdT, November 2008
// begin: RvdT March 2009:
// to decrease parameter interdependency,
// use VGZEB as a parameter, instead of VGZEBOK:
// VGZEB : bandgap for Zener tunneling at T = Tref,
// VGZEBOK : bandgap for Zener tunneling at T = 0 K.
//`max_logexp(VGZEBOK, VGZEB + AVGEB*Trk*Trk / (Trk + TVGEB), 0.05, 0.1);
//dw admsXml can't expand the macro `max_logexp here - using the code
_x = VGZEB + AVGEB*Trk*Trk / (Trk + TVGEB);
_x0 = 0.05;
_a = 0.1;
_dxa = (_x - _x0) / (_a);
if (_x < _x0)
VGZEBOK = _x0 + _a * ln(1.0 + exp(_dxa));
else
VGZEBOK = _x + _a * ln(1.0 + exp(-_dxa));
VGZEB_Tr = VGZEB;
// end: RvdT March 2009: use VGZEB as a parameter, instead of VGZEBOK:
inv_VGZEB_Tr = 1.0 / VGZEB_Tr;
inv_VDE = 1.0 / VDE;
// end: RvdT, November 2008; Zener tunneling current model
end

353
src/spicelib/devices/adms/mextram/admsva/opinfo.inc
View File

@ -6,12 +6,14 @@
// Evaluate the operating point (output) variables
begin
`ifdef __VAMS_COMPACT_MODELING__
//`ifdef __VAMS_COMPACT_MODELING__
`ifdef NGSPICE_ADMS
// The external currents and the current gain
OP_ic = I(<c>); // External DC collector current
OP_ib = I(<b>); // External DC base Current
//OP_ic = I(<c>); // External DC collector current
OP_ic = TYPE*Ic1c2; // External DC collector current
//OP_ib = I(<b>); // External DC base Current
OP_ib = TYPE*Ib1b2; // External DC base Current
if (OP_ib == 0)
begin
@ -23,222 +25,225 @@ begin
end
// begin added in MXT 504.9:
OP_ie = I(<e>); // External DC emitter current
//OP_ie = I(<e>); // External DC emitter current
OP_ie = TYPE*(In+Ib1_s); // External DC emitter current
OP_vbe = V(b, e); // External base-emitter bias
OP_vce = V(c, e); // External collector-emitter bias
OP_vbc = V(b, c); // External base-collector bias
`ifdef SUBSTRATE
OP_is = I(<s>); // External DC emitter current
OP_vse = V(s, e); // External substrate-emitter bias
OP_vbs = V(b, s); // External base-substrate bias
OP_vsc = V(s, c); // External substrate-collector bias
//OP_is = I(<s>); // External DC emitter current
OP_is = TYPE*Isub; // External DC emitter current
OP_vse = V(s, e); // External substrate-emitter bias
OP_vbs = V(b, s); // External base-substrate bias
OP_vsc = V(s, c); // External substrate-collector bias
`endif
// end added in MXT 504.9:
// The internal voltage differences
OP_vb2e1 = Vb2e1; // Internal base-emiter bias
OP_vb2c2 = Vb2c2; // Internal base-emiter bias
OP_vb2c1 = Vb2c1; // Internal base-collector bias including epilayer
OP_vb1c1 = Vb1b2 + Vb2c1; // External base-collector bias without contact resistances
OP_vc4c1 = Vc4c1; // Bias over intrinsic buried layer
OP_vc3c4 = Vc3c4; // Bias over extrinsic buried layer
OP_ve1e = - Vee1; // Bias over emiter resistance
// The branch currents
OP_in = In; // Main current
OP_ic1c2 = Ic1c2; // Epilayer current
OP_ib1b2 = Ib1b2; // Pinched-base current
OP_ib1 = Ib1; // Ideal forward base current
OP_sib1 = Ib1_s; // Ideal side-wall base current
//
// 504.8, RvdT, TU-Delft April. 2009:
//
OP_izteb = Izteb ; // Zener tunneling current
//
OP_ib2 = Ib2; // Non-ideal forward base current
OP_ib3 = Ib3; // Non-ideal reverse base current
OP_iavl = Iavl; // Avalanche current
OP_iex = Iex; // Extrinsic reverse base current
OP_xiex = XIex; // Extrinsic reverse base current
// end added in MXT 504.9:
// The internal voltage differences
OP_vb2e1 = Vb2e1; // Internal base-emiter bias
OP_vb2c2 = Vb2c2; // Internal base-emiter bias
OP_vb2c1 = Vb2c1; // Internal base-collector bias including epilayer
OP_vb1c1 = Vb1b2 + Vb2c1; // External base-collector bias without contact resistances
OP_vc4c1 = Vc4c1; // Bias over intrinsic buried layer
OP_vc3c4 = Vc3c4; // Bias over extrinsic buried layer
OP_ve1e = - Vee1; // Bias over emiter resistance
// The branch currents
OP_in = In; // Main current
OP_ic1c2 = Ic1c2; // Epilayer current
OP_ib1b2 = Ib1b2; // Pinched-base current
OP_ib1 = Ib1; // Ideal forward base current
OP_sib1 = Ib1_s; // Ideal side-wall base current
//
// 504.8, RvdT, TU-Delft April. 2009:
//
OP_izteb = Izteb ; // Zener tunneling current
//
OP_ib2 = Ib2; // Non-ideal forward base current
OP_ib3 = Ib3; // Non-ideal reverse base current
OP_iavl = Iavl; // Avalanche current
OP_iex = Iex; // Extrinsic reverse base current
OP_xiex = XIex; // Extrinsic reverse base current
`ifdef SUBSTRATE
OP_isub = Isub; // Substrate current
OP_xisub = XIsub; // Substrate current
OP_isf = Isf; // Substrate-collector current
OP_isub = Isub; // Substrate current
OP_xisub = XIsub; // Substrate current
OP_isf = Isf; // Substrate-collector current
`endif
OP_ire = - Vee1 / RE_TM; // Current through emiter resistance
OP_irbc = Vbb1 / RBC_TM; // Current through constant base resistance
OP_ircc = Vcc3 * GCCxx_TM; // Current through collector contact resistance
OP_ircblx = Vc3c4 * GCCex_TM; // Current through extrinsic buried layer resistance
OP_ircbli = Vc4c1 * GCCin_TM; // Current through extrinsic buried layer resistance
// The branch charges
OP_qe = Qe; // Emitter charge or emitter neutral charge
OP_qte = Qte; // Base-emiter depletion charge
OP_sqte = Qte_s; // Sidewall base-emiter depletion charge
OP_qbe = Qbe; // Base-emiter diffusion charge
OP_qbc = Qbc; // Base-collector diffusion charge
OP_qtc = Qtc; // Base-colector depletion charge
OP_qepi = Qepi; // Epilayer diffusion charge
OP_qb1b2 = Qb1b2; // AC current crowding charge
OP_qtex = Qtex; // Extrinsic base-collector depletion charge
OP_xqtex = XQtex; // Extrinsic base-collector depletion charge
OP_qex = Qex; // Extrinsic base-collector diffusion charge
OP_xqex = XQex; // Extrinsic base-collector diffusion charge
OP_ire = - Vee1 / RE_TM; // Current through emiter resistance
OP_irbc = Vbb1 / RBC_TM; // Current through constant base resistance
OP_ircc = Vcc3 * GCCxx_TM; // Current through collector contact resistance
OP_ircblx = Vc3c4 * GCCex_TM; // Current through extrinsic buried layer resistance
OP_ircbli = Vc4c1 * GCCin_TM; // Current through extrinsic buried layer resistance
// The branch charges
OP_qe = Qe; // Emitter charge or emitter neutral charge
OP_qte = Qte; // Base-emiter depletion charge
OP_sqte = Qte_s; // Sidewall base-emiter depletion charge
OP_qbe = Qbe; // Base-emiter diffusion charge
OP_qbc = Qbc; // Base-collector diffusion charge
OP_qtc = Qtc; // Base-colector depletion charge
OP_qepi = Qepi; // Epilayer diffusion charge
OP_qb1b2 = Qb1b2; // AC current crowding charge
OP_qtex = Qtex; // Extrinsic base-collector depletion charge
OP_xqtex = XQtex; // Extrinsic base-collector depletion charge
OP_qex = Qex; // Extrinsic base-collector diffusion charge
OP_xqex = XQex; // Extrinsic base-collector diffusion charge
`ifdef SUBSTRATE
OP_qts = Qts; // Collector substrate depletion charge
OP_qts = Qts; // Collector substrate depletion charge
`endif
// Small signal equivalent circuit conductances and resistances
// Small signal equivalent circuit conductances and resistances
OP_gx = - ddx(In, V(e1)); // Forward transconductance
OP_gy = - ddx(In, V(c2)); // Reverse transconductance
OP_gx = - ddx(In, V(e1)); // Forward transconductance
OP_gy = - ddx(In, V(c2)); // Reverse transconductance
OP_gz = - ddx(In, V(c1)); // Reverse transconductance
OP_gz = - ddx(In, V(c1)); // Reverse transconductance
OP_sgpi = - ddx(Ib1_s, V(e))
- ddx(Ib1_s, V(e1)); // Conductance sidewal b-e junction
OP_gpix = - ddx(Ib1+Ib2, V(e1)); // Conductance floor b-e junction
OP_sgpi = - ddx(Ib1_s, V(e))
- ddx(Ib1_s, V(e1)); // Conductance sidewal b-e junction
OP_gpix = - ddx(Ib1+Ib2, V(e1)); // Conductance floor b-e junction
OP_gpiy = - ddx(Ib1, V(c2)); // Early effect on recombination base current
OP_gpiz = - ddx(Ib1, V(c1)); // Early effect on recombination base current
OP_gpiy = - ddx(Ib1, V(c2)); // Early effect on recombination base current
OP_gpiz = - ddx(Ib1, V(c1)); // Early effect on recombination base current
OP_gmux = ddx( Iavl, V(e1)); // Early effect on avalanche current limitting
OP_gmuy = ddx( Iavl, V(c2)); // Conductance of avalanche current
OP_gmuz = - ddx(- Iavl, V(c1)); // Conductance of avalanche current
OP_gmux = ddx( Iavl, V(e1)); // Early effect on avalanche current limitting
OP_gmuy = ddx( Iavl, V(c2)); // Conductance of avalanche current
OP_gmuz = ddx( Iavl, V(c1)); // Conductance of avalanche current
// Conductance extrinsic b-c current :
OP_gmuex = ddx(Iex+Ib3, V(e))
+ ddx(Iex+Ib3, V(b1))
+ ddx(Iex+Ib3, V(b2))
+ ddx(Iex+Ib3, V(e1))
+ ddx(Iex+Ib3, V(c2));
// Conductance extrinsic b-c current :
OP_gmuex = ddx(Iex+Ib3, V(e))
+ ddx(Iex+Ib3, V(b1))
+ ddx(Iex+Ib3, V(b2))
+ ddx(Iex+Ib3, V(e1))
+ ddx(Iex+Ib3, V(c2));
OP_xgmuex = ddx(XIex, V(b)) ; // Conductance extrinsic b-c current
OP_xgmuex = ddx(XIex, V(b)) ; // Conductance extrinsic b-c current
OP_grcvy = - ddx(Ic1c2, V(c2)); // Conductance of epilayer current
OP_grcvz = - ddx(Ic1c2, V(c1)); // Conductance of epilayer current
OP_grcvy = - ddx(Ic1c2, V(c2)); // Conductance of epilayer current
OP_grcvz = - ddx(Ic1c2, V(c1)); // Conductance of epilayer current
OP_rbv = 1.0 / (- ddx(Ib1b2, V(b2)) - ddx(Ib1b2, V(c2))); // Base resistance
// OP_rbv = 1.0 / (- ddx(Ib1b2, V(b2)) - ddx(Ib1b2, V(c2))); // Base resistance
OP_grbvx = - ddx(Ib1b2, V(e)) - ddx(Ib1b2, V(e1)); // Early effect on base resistance
OP_grbvy = - ddx(Ib1b2, V(c2)); // Early effect on base resistance
OP_grbvx = - ddx(Ib1b2, V(e)) - ddx(Ib1b2, V(e1)); // Early effect on base resistance
OP_grbvy = - ddx(Ib1b2, V(c2)); // Early effect on base resistance
OP_grbvz = - ddx(Ib1b2, V(c1)); // Early effect on base resistance
OP_grbvz = - ddx(Ib1b2, V(c1)); // Early effect on base resistance
OP_re = RE_TM; // Emiter resistance
OP_rbc = RBC_TM; // Constant base resistance
OP_rcc = RCCxx_TM; // Collector Contact resistance
OP_rcblx = RCCex_TM; // Extrinsic buried layer resistance
OP_rcbli = RCCin_TM; // Extrinsic buried layer resistance
OP_re = RE_TM; // Emiter resistance
OP_rbc = RBC_TM; // Constant base resistance
OP_rcc = RCCxx_TM; // Collector Contact resistance
OP_rcblx = RCCex_TM; // Extrinsic buried layer resistance
OP_rcbli = RCCin_TM; // Extrinsic buried layer resistance
`ifdef SUBSTRATE
OP_gs = ddx(Isub, V(b)) + ddx(Isub, V(b1)); // Conductance parasitic PNP transitor
OP_xgs = ddx(XIsub, V(b)) ; // Conductance parasitic PNP transistor
OP_gsf = ddx(Isf, V(s)) ; // Conductance substrate-collector current
OP_gs = ddx(Isub, V(b)) + ddx(Isub, V(b1)); // Conductance parasitic PNP transitor
OP_xgs = ddx(XIsub, V(b)) ; // Conductance parasitic PNP transistor
OP_gsf = ddx(Isf, V(s)) ; // Conductance substrate-collector current
`endif
// Small signal equivalent circuit capacitances
OP_scbe = - ddx(Qte_s, V(e)) - ddx(Qte_s, V(e1)); // Capacitance sidewall b-e junction
OP_cbex = - ddx(Qte + Qbe + Qe, V(e1)) ; // Capacitance floor b-e junction
// Small signal equivalent circuit capacitances
OP_scbe = - ddx(Qte_s, V(e)) - ddx(Qte_s, V(e1)); // Capacitance sidewall b-e junction
OP_cbex = - ddx(Qte + Qbe + Qe, V(e1)) ; // Capacitance floor b-e junction
OP_cbey = - ddx(Qbe, V(c2)); // Early effect on b-e diffusion junction
OP_cbey = - ddx(Qbe, V(c2)); // Early effect on b-e diffusion junction
OP_cbez = - ddx(Qbe, V(c1)); // Early effect on b-e diffusion junction
OP_cbez = - ddx(Qbe, V(c1)); // Early effect on b-e diffusion junction
OP_cbcx = - ddx(Qbc, V(e)) - ddx(Qbc, V(e1)); // Early effect on b-c diffusion junction
OP_cbcx = - ddx(Qbc, V(e)) - ddx(Qbc, V(e1)); // Early effect on b-c diffusion junction
OP_cbcy = - ddx(Qtc + Qbc + Qepi, V(c2)); // Capacitance floor b-c junction
OP_cbcz = - ddx(Qtc + Qbc + Qepi, V(c1)); // Capacitance floor b-c junction
OP_cbcy = - ddx(Qtc + Qbc + Qepi, V(c2)); // Capacitance floor b-c junction
OP_cbcz = - ddx(Qtc + Qbc + Qepi, V(c1)); // Capacitance floor b-c junction
// Capacitance extrinsic b-c junction :
OP_cbcex = ddx(Qtex + Qex,V(e))
+ ddx(Qtex + Qex,V(b1 ))
+ ddx(Qtex + Qex,V(b2))
+ ddx(Qtex + Qex,V(e1))
+ ddx(Qtex + Qex,V(c2)) ;
// Capacitance extrinsic b-c junction :
OP_cbcex = ddx(Qtex + Qex,V(e))
+ ddx(Qtex + Qex,V(b1 ))
+ ddx(Qtex + Qex,V(b2))
+ ddx(Qtex + Qex,V(e1))
+ ddx(Qtex + Qex,V(c2)) ;
// Capacitance extrinsic b-c junction :
OP_xcbcex = ddx(XQtex + XQex, V(b)) ;
// Capacitance extrinsic b-c junction :
OP_xcbcex = ddx(XQtex + XQex, V(b)) ;
OP_cb1b2 = - ddx(Qb1b2, V(b2)) - ddx(Qb1b2, V(c2)); // Capacitance AC current crowding
OP_cb1b2 = - ddx(Qb1b2, V(b2)) - ddx(Qb1b2, V(c2)); // Capacitance AC current crowding
OP_cb1b2x = - ddx(Qb1b2, V(e)) - ddx(Qb1b2, V(e1)); // Cross-capacitance AC current crowding
OP_cb1b2y = - ddx(Qb1b2, V(c2)); // Cross-capacitance AC current crowding
OP_cb1b2z = - ddx(Qb1b2, V(c1)) ; // Cross-capacitance AC current crowding
OP_cb1b2x = - ddx(Qb1b2, V(e)) - ddx(Qb1b2, V(e1)); // Cross-capacitance AC current crowding
OP_cb1b2y = - ddx(Qb1b2, V(c2)); // Cross-capacitance AC current crowding
OP_cb1b2z = - ddx(Qb1b2, V(c1)) ; // Cross-capacitance AC current crowding
`ifdef SUBSTRATE
OP_cts = ddx(Qts, V(s)) ; // Capacitance s-c junction
OP_cts = ddx(Qts, V(s)) ; // Capacitance s-c junction
`endif
// Approximate small signal equivalent circuit
dydx = (OP_gx - OP_gmux) / (OP_grcvy + OP_gmuy - OP_gy);
dydz = (OP_gz - OP_grcvz - OP_gmuz) / (OP_grcvy + OP_gmuy - OP_gy);
gpi = OP_sgpi + OP_gpix + OP_gmux + OP_gpiz + OP_gmuz +
(OP_gpiy + OP_gmuy) * (dydx + dydz);
OP_gm = (OP_grcvy * (OP_gx - OP_gmux + // Transconductance
OP_gz - OP_gmuz) - OP_grcvz *
(OP_gy - OP_gmuy)) / (OP_grcvy + OP_gmuy - OP_gy);
OP_beta = OP_gm / gpi; // Current amplification
OP_gout = ((OP_gy - OP_gmuy) * OP_grcvz - // Output conductance
(OP_gz - OP_gmuz) * OP_grcvy) /
(OP_grcvy + OP_gmuy - OP_gy);
OP_gmu = OP_gpiz + OP_gmuz + (OP_gpiy + OP_gmuy) * dydz + // Feedback transconductance
OP_gmuex + OP_xgmuex;
OP_rb = RBC_TM + OP_rbv; // Base resistance
OP_rc = OP_rcc + OP_rcblx + OP_rcbli; // Collector resistance
OP_cbe = OP_cbex + OP_scbe + OP_cbcx + // Base-emitter capacitance
(OP_cbey + OP_cbcy) * dydx + CBEO_M;
OP_cbc = (OP_cbey + OP_cbcy) * dydz + OP_cbcz + // Base-collector capacitance
OP_cbcex + OP_xcbcex + CBCO_M;
// Quantities to describe internal state of the model
gammax = (OP_gpix + OP_gmux - OP_grbvx) * OP_rbv;
gammay = (OP_gpiy + OP_gmuy - OP_grbvy) * OP_rbv;
gammaz = (OP_gpiz + OP_gmuz - OP_grbvz) * OP_rbv;
gbfx = OP_gpix + OP_sgpi * (1.0 + gammax);
gbfy = OP_gpiy + OP_sgpi * gammay;
gbfz = OP_gpiz + OP_sgpi * gammaz;
// RvdT March 2008:
alpha_ft = (1.0 + (OP_grcvy * dydx * OP_rc) +
(OP_gx + gbfx + (OP_gy + gbfy) * dydx) * RE_TM)/
(1.0 - (OP_grcvz + OP_grcvy * dydz) * OP_rc -
(OP_gz + gbfz + (OP_gy + gbfy) * dydz) * RE_TM);
rx = pow((OP_grcvy * dydx + alpha_ft * (OP_grcvz + OP_grcvy * dydz)), -1);
rz = alpha_ft * rx;
ry = (1.0 - OP_grcvz * rz) / OP_grcvy;
rb1b2 = gammax * rx + gammay * ry + gammaz * rz;
rex = rz + rb1b2 - OP_rcbli;
xrex = rz + rb1b2 + RBC_TM * ((gbfx + OP_gmux) * rx + (gbfy + OP_gmuy) * ry +
(gbfz + OP_gmuz) * rz) - OP_rcbli - OP_rcblx;
taut = OP_scbe * (rx + rb1b2) + (OP_cbex + OP_cbcx) * rx + (OP_cbey + OP_cbcy) *
ry + (OP_cbez + OP_cbcz) * rz + OP_cbcex * rex + OP_xcbcex * xrex +
(CBEO_M + CBCO_M) * (xrex - RCCxx_TM);
OP_ft = 1.0 / (2.0 * `PI * taut); // Good approximation for cut-off frequency
OP_iqs = Iqs; // Current at onset of quasi-saturation
OP_xiwepi = xi_w; // Thickness of injection layer
OP_vb2c2star = Vb2c2star; // Physical value of internal base-collector bias
//self-heating
// Approximate small signal equivalent circuit
dydx = (OP_gx - OP_gmux) / (OP_grcvy + OP_gmuy - OP_gy);
dydz = (OP_gz - OP_grcvz - OP_gmuz) / (OP_grcvy + OP_gmuy - OP_gy);
gpi = OP_sgpi + OP_gpix + OP_gmux + OP_gpiz + OP_gmuz +
(OP_gpiy + OP_gmuy) * (dydx + dydz);
OP_gm = (OP_grcvy * (OP_gx - OP_gmux + // Transconductance
OP_gz - OP_gmuz) - OP_grcvz *
(OP_gy - OP_gmuy)) / (OP_grcvy + OP_gmuy - OP_gy);
OP_beta = OP_gm / gpi; // Current amplification
OP_gout = ((OP_gy - OP_gmuy) * OP_grcvz - // Output conductance
(OP_gz - OP_gmuz) * OP_grcvy) /
(OP_grcvy + OP_gmuy - OP_gy);
OP_gmu = OP_gpiz + OP_gmuz + (OP_gpiy + OP_gmuy) * dydz + // Feedback transconductance
OP_gmuex + OP_xgmuex;
OP_rb = RBC_TM + OP_rbv; // Base resistance
OP_rc = OP_rcc + OP_rcblx + OP_rcbli; // Collector resistance
OP_cbe = OP_cbex + OP_scbe + OP_cbcx + // Base-emitter capacitance
(OP_cbey + OP_cbcy) * dydx + CBEO_M;
OP_cbc = (OP_cbey + OP_cbcy) * dydz + OP_cbcz + // Base-collector capacitance
OP_cbcex + OP_xcbcex + CBCO_M;
// Quantities to describe internal state of the model
gammax = (OP_gpix + OP_gmux - OP_grbvx) * OP_rbv;
gammay = (OP_gpiy + OP_gmuy - OP_grbvy) * OP_rbv;
gammaz = (OP_gpiz + OP_gmuz - OP_grbvz) * OP_rbv;
gbfx = OP_gpix + OP_sgpi * (1.0 + gammax);
gbfy = OP_gpiy + OP_sgpi * gammay;
gbfz = OP_gpiz + OP_sgpi * gammaz;
// RvdT March 2008:
alpha_ft = (1.0 + (OP_grcvy * dydx * OP_rc) +
(OP_gx + gbfx + (OP_gy + gbfy) * dydx) * RE_TM)/
(1.0 - (OP_grcvz + OP_grcvy * dydz) * OP_rc -
(OP_gz + gbfz + (OP_gy + gbfy) * dydz) * RE_TM);
rx = pow((OP_grcvy * dydx + alpha_ft * (OP_grcvz + OP_grcvy * dydz)), -1);
rz = alpha_ft * rx;
ry = (1.0 - OP_grcvz * rz) / OP_grcvy;
rb1b2 = gammax * rx + gammay * ry + gammaz * rz;
rex = rz + rb1b2 - OP_rcbli;
xrex = rz + rb1b2 + RBC_TM * ((gbfx + OP_gmux) * rx + (gbfy + OP_gmuy) * ry +
(gbfz + OP_gmuz) * rz) - OP_rcbli - OP_rcblx;
taut = OP_scbe * (rx + rb1b2) + (OP_cbex + OP_cbcx) * rx + (OP_cbey + OP_cbcy) *
ry + (OP_cbez + OP_cbcz) * rz + OP_cbcex * rex + OP_xcbcex * xrex +
(CBEO_M + CBCO_M) * (xrex - RCCxx_TM);
OP_ft = 1.0 / (2.0 * `PI * taut); // Good approximation for cut-off frequency
OP_iqs = Iqs; // Current at onset of quasi-saturation
OP_xiwepi = xi_w; // Thickness of injection layer
OP_vb2c2star = Vb2c2star; // Physical value of internal base-collector bias
//self-heating
`ifdef SELFHEATING
OP_pdiss = power_dis; // Dissipation
OP_pdiss = power_dis; // Dissipation
`endif
OP_tk = Tk; // Actual temperature
OP_tk = Tk; // Actual temperature
`endif
end
end
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