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@ -1167,11 +1167,19 @@ compute the capacitance from strictly geometric information. |
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The capacitor has a capacitance computed as |
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The capacitor has a capacitance computed as |
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@tex |
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$$ |
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{\rm CAP} = {\rm CJ} ({\rm LENGTH} - {\rm NARROW}) |
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({\rm WIDTH} - {\rm NARROW}) + |
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2 {\rm CJSW} ({\rm LENGTH} + {\rm WIDTH} - 2 {\rm NARROW}) |
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$$ |
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@end tex |
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@ifnottex |
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@example |
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@example |
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CAP = CJ (LENGTH - NARROW) (WIDTH - NARROW) |
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+ 2 CJSW (LENGTH + WIDTH - 2 NARROW) |
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CAP = CJ (LENGTH - NARROW) (WIDTH - NARROW) + |
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2 CJSW (LENGTH + WIDTH - 2 NARROW) |
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@end example |
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@end example |
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@end ifnottex |
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@node Inductors, Coupled (Mutual) Inductors, Semiconductor Capacitor Model (C), Elementary Devices |
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@node Inductors, Coupled (Mutual) Inductors, Semiconductor Capacitor Model (C), Elementary Devices |
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@subsection Inductors |
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@subsection Inductors |
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@ -1601,7 +1609,6 @@ $$ |
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@end tex |
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@end tex |
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@ifnottex |
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@ifnottex |
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@example |
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@example |
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| | |
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V(t)=V + V sin 2 J FC t + MDI sin(2 J FS t) |
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V(t)=V + V sin 2 J FC t + MDI sin(2 J FS t) |
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O A | | |
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O A | | |
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@ -2095,15 +2102,21 @@ junction capacitance equivalent to the capacitance replaced, and with a |
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saturation current of ISPERL amps per meter of transmission line and an |
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saturation current of ISPERL amps per meter of transmission line and an |
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optional series resistance equivalent to RSPERL ohms per meter. |
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optional series resistance equivalent to RSPERL ohms per meter. |
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@multitable @columnfractions .15 .4 .2 .1 .1 |
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@item name @tab parameter @tab units @tab default @tab example area |
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@item K @tab Propagation Constant @tab - @tab 2.0 @tab 1.2 |
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@item FMAX @tab Maximum Frequency of interest @tab Hz @tab 1.0G @tab 6.5Meg |
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@item RPERL @tab Resistance per unit length @tab Z/m @tab 1000 @tab 10 |
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@item CPERL @tab Capacitance per unit length @tab F/m @tab 1.0e-15 @tab 1pF |
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@item ISPERL @tab Saturation Current per unit length @tab A/m @tab 0 |
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@tab - |
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@item RSPERL @tab Diode Resistance per unit length @tab Z/m @tab 0 @tab - - |
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@multitable @columnfractions .1 .45 .1 .15 .1 .1 |
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@item name @tab parameter |
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@tab units @tab default @tab example |
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@item K @tab Propagation Constant |
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@tab - @tab 2.0 @tab 1.2 |
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@item FMAX @tab Maximum Frequency of interest |
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@tab Hz @tab 1.0G @tab 6.5Meg |
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@item RPERL @tab Resistance per unit length |
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@tab Z/m @tab 1000 @tab 10 |
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@item CPERL @tab Capacitance per unit length |
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@tab F/m @tab 1.0e-15 @tab 1pF |
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@item ISPERL @tab Saturation Current per unit length |
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@tab A/m @tab 0 @tab - |
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@item RSPERL @tab Diode Resistance per unit length |
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@tab Z/m @tab 0 @tab - |
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@end multitable |
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@end multitable |
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@ -2204,7 +2217,7 @@ exponential increase in the reverse diode current and is determined by |
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the parameters BV and IBV (both of which are positive numbers). |
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the parameters BV and IBV (both of which are positive numbers). |
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@multitable @columnfractions .1 .4 .2 .1 .1 .1 |
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@multitable @columnfractions .1 .45 .15 .15 .15 |
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@item name @tab parameter @tab units @tab default @tab example @tab area |
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@item name @tab parameter @tab units @tab default @tab example @tab area |
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@item IS @tab saturation current @tab A @tab 1.0e-14 @tab 1.0e-14 @tab * |
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@item IS @tab saturation current @tab A @tab 1.0e-14 @tab 1.0e-14 @tab * |
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@item RS @tab ohmic resistance @tab Z @tab 0 @tab 10 @tab * |
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@item RS @tab ohmic resistance @tab Z @tab 0 @tab 10 @tab * |
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@ -2224,7 +2237,6 @@ the parameters BV and IBV (both of which are positive numbers). |
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@tab - @tab 0.5 @tab depletion capacitance formula |
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@tab - @tab 0.5 @tab depletion capacitance formula |
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@item BV @tab reverse breakdown voltage @tab V @tab infinite @tab 40.0 |
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@item BV @tab reverse breakdown voltage @tab V @tab infinite @tab 40.0 |
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@item IBV @tab current at breakdown voltage @tab A @tab 1.0e-3 |
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@item IBV @tab current at breakdown voltage @tab A @tab 1.0e-3 |
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@tab o |
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@item TNOM @tab parameter measurement temperature @tab C @tab 27 @tab 50 |
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@item TNOM @tab parameter measurement temperature @tab C @tab 27 @tab 50 |
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@end multitable |
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@end multitable |
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@ -2306,7 +2318,7 @@ accepted. |
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Modified Gummel-Poon BJT Parameters. |
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Modified Gummel-Poon BJT Parameters. |
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@multitable @columnfractions .1 .4 .2 .1 .1 .1 |
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@multitable @columnfractions .1 .45 .15 .15 .15 |
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@item name @tab parameter @tab units @tab default @tab example @tab area |
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@item name @tab parameter @tab units @tab default @tab example @tab area |
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@item IS @tab transport saturation current @tab A @tab 1.0e-16 @tab |
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@item IS @tab transport saturation current @tab A @tab 1.0e-16 @tab |
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1.0e-15 @tab * |
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1.0e-15 @tab * |
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@ -2363,7 +2375,7 @@ internal base node @tab - @tab 1 |
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@item AF @tab flicker-noise exponent @tab - @tab 1 |
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@item AF @tab flicker-noise exponent @tab - @tab 1 |
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@item FC @tab coefficient for forward-bias depletion capacitance formula |
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@item FC @tab coefficient for forward-bias depletion capacitance formula |
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@tab - @tab 0.5 @tab o |
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@tab - @tab 0.5 @tab o |
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@item TNOM @tab Parameter measurement temperature @tab C @tab 27 @tab 50 |
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@item TNOM @tab Parameter measurement temperature @tab °C @tab 27 @tab 50 |
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@end multitable |
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@end multitable |
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@ -2417,7 +2429,7 @@ junction voltage and are defined by the parameters CGS, CGD, and PB. |
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Note that in Spice3f and later, a fitting parameter B has been added. |
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Note that in Spice3f and later, a fitting parameter B has been added. |
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For details, see [9]. |
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For details, see [9]. |
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@multitable @columnfractions .1 .4 .1 .1 .1 .1 |
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@multitable @columnfractions .1 .45 .15 .15 .15 |
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@item name @tab parameter @tab units @tab default @tab example @tab area |
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@item name @tab parameter @tab units @tab default @tab example @tab area |
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@item VTO @tab threshold voltage (@math{V_T0}) @tab V @tab -2.0 @tab -2.0 |
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@item VTO @tab threshold voltage (@math{V_T0}) @tab V @tab -2.0 @tab -2.0 |
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@item BETA @tab transconductance parameter (B) |
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@item BETA @tab transconductance parameter (B) |
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@ -2568,81 +2580,95 @@ fitting, the option "BADMOS3" may be set to use the old implementation |
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(see the section on simulation variables and the ".OPTIONS" line). |
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(see the section on simulation variables and the ".OPTIONS" line). |
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SPICE level 1, 2, 3 and 6 parameters: |
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SPICE level 1, 2, 3 and 6 parameters: |
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@example |
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name parameter units default example |
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1 LEVEL model index - 1 |
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2 VTO zero-bias threshold voltage (V ) V 0.0 1.0 |
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TO 2 |
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3 KP transconductance parameter A/V 2.0e-5 3.1e-5 |
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1/2 |
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4 GAMMA bulk threshold parameter (\) V 0.0 0.37 |
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5 PHI surface potential (U) V 0.6 0.65 |
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6 LAMBDA channel-length modulation |
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(MOS1 and MOS2 only) (L) 1/V 0.0 0.02 |
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7 RD drain ohmic resistance Z 0.0 1.0 |
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8 RS source ohmic resistance Z 0.0 1.0 |
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9 CBD zero-bias B-D junction capacitance F 0.0 20fF |
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10 CBS zero-bias B-S junction capacitance F 0.0 20fF |
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11 IS bulk junction saturation current (I ) A 1.0e-14 1.0e-15 |
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S |
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12 PB bulk junction potential V 0.8 0.87 |
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13 CGSO gate-source overlap capacitance |
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per meter channel width F/m 0.0 4.0e-11 |
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14 CGDO gate-drain overlap capacitance |
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per meter channel width F/m 0.0 4.0e-11 |
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15 CGBO gate-bulk overlap capacitance |
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per meter channel length F/m 0.0 2.0e-10 |
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16 RSH drain and source diffusion |
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sheet resistance Z/[] 0.0 10.0 |
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17 CJ zero-bias bulk junction bottom cap. |
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2 |
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per sq-meter of junction area F/m 0.0 2.0e-4 |
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18 MJ bulk junction bottom grading coeff. - 0.5 0.5 |
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19 CJSW zero-bias bulk junction sidewall cap. |
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per meter of junction perimeter F/m 0.0 1.0e-9 |
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20 MJSW bulk junction sidewall grading coeff. - 0.50(level1) |
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0.33(level2, 3) |
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21 JS bulk junction saturation current |
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2 |
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per sq-meter of junction area A/m 1.0e-8 |
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22 TOX oxide thickness meter 1.0e-7 1.0e-7 |
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3 |
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23 NSUB substrate doping 1/cm 0.0 4.0e15 |
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2 |
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24 NSS surface state density 1/cm 0.0 1.0e10 |
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2 |
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25 NFS fast surface state density 1/cm 0.0 1.0e10 |
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26 TPG type of gate material: - 1.0 |
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+1 opp. to substrate |
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-1 same as substrate |
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0 Al gate |
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27 XJ metallurgical junction depth meter 0.0 1M |
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28 LD lateral diffusion meter 0.0 0.8M |
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2 |
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29 UO surface mobility cm /Vs 600 700 |
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30 UCRIT critical field for mobility |
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degradation (MOS2 only) V/cm 1.0e4 1.0e4 |
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31 UEXP critical field exponent in |
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mobility degradation (MOS2 only) - 0.0 0.1 |
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32 UTRA transverse field coeff. (mobility) |
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(deleted for MOS2) - 0.0 0.3 |
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33 VMAX maximum drift velocity of carriers m/s 0.0 5.0e4 |
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34 NEFF total channel-charge (fixed and |
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mobile) coefficient (MOS2 only) - 1.0 5.0 |
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35 KF flicker noise coefficient - 0.0 1.0e-26 |
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36 AF flicker noise exponent - 1.0 1.2 |
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37 FC coefficient for forward-bias |
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depletion capacitance formula - 0.5 |
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38 DELTA width effect on threshold voltage |
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(MOS2 and MOS3) - 0.0 1.0 |
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39 THETA mobility modulation (MOS3 only) 1/V 0.0 0.1 |
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40 ETA static feedback (MOS3 only) - 0.0 1.0 |
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41 KAPPA saturation field factor (MOS3 only) - 0.2 0.5 |
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o |
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42 TNOM parameter measurement temperature C 27 50 |
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@end example |
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@multitable @columnfractions .1 .45 .15 .15 .15 |
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@item name @tab parameter |
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@tab units @tab default @tab example |
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@item LEVEL @tab model index |
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@tab - @tab 1 |
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@item VTO @tab zero-bias threshold voltage (@math{V_T0}) |
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@tab V @tab 0.0 @tab 1.0 |
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@item KP @tab transconductance parameter |
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@tab @math{A/V^2} @tab 2.0e-5 @tab 3.1e-5 |
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@item GAMMA @tab bulk threshold parameter |
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@tab @math{V^1/2} @tab 0.0 @tab 0.37 |
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@item PHI @tab surface potential (U) |
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@tab V @tab 0.6 @tab 0.65 |
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@item LAMBDA @tab channel-length modulation (MOS1 and MOS2 only) (L) |
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@tab 1/V @tab 0.0 @tab 0.02 |
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@item RD @tab drain ohmic resistance |
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@tab Z @tab 0.0 @tab 1.0 |
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@item RS @tab source ohmic resistance |
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@tab Z @tab 0.0 @tab 1.0 |
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@item CBD @tab zero-bias B-D junction capacitance |
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@tab F @tab 0.0 @tab 20fF |
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@item CBS @tab zero-bias B-S junction capacitance |
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@tab F @tab 0.0 @tab 20fF |
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@item IS @tab bulk junction saturation current (@math{I_S}) |
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@tab A @tab 1.0e-14 @tab 1.0e-15 |
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@item PB @tab bulk junction potential |
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@tab V @tab 0.8 @tab 0.87 |
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@item CGSO @tab gate-source overlap capacitance per meter channel width |
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@tab F/m @tab 0.0 @tab 4.0e-11 |
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@item CGDO @tab gate-drain overlap capacitance per meter channel width |
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@tab F/m @tab 0.0 @tab 4.0e-11 |
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@item CGBO @tab gate-bulk overlap capacitance per meter channel length |
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@tab F/m @tab 0.0 @tab 2.0e-10 |
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@item RSH @tab drain and source diffusion sheet resistance |
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@tab Z/[] @tab 0.0 @tab 10.0 |
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@item CJ @tab zero-bias bulk junction bottom cap. per sq-meter of junction area |
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@tab @math{F/m^2} @tab 0.0 @tab 2.0e-4 |
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@item MJ @tab bulk junction bottom grading coeff. |
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@tab - @tab 0.5 @tab 0.5 |
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@item CJSW @tab zero-bias bulk junction sidewall cap. per meter of junction perimeter |
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@tab F/m @tab 0.0 @tab 1.0e-9 |
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@item MJSW @tab bulk junction sidewall grading coeff. |
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@tab - @tab 0.50(level1), 0.33(level2, 3) |
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@item JS @tab bulk junction saturation current per sq-meter of junction area |
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@tab @math{A/m^2} @tab 1.0e-8 |
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@item TOX @tab oxide thickness |
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@tab meter @tab 1.0e-7 @tab 1.0e-7 |
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@item NSUB @tab substrate doping |
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@tab @math{1/cm^3} @tab 0.0 @tab 4.0e15 |
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@item NSS @tab surface state density |
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@tab @math{1/cm^2} @tab 0.0 @tab 1.0e10 |
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@item NFS @tab fast surface state density |
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@tab @math{1/cm^2} @tab 0.0 @tab 1.0e10 |
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@item TPG @tab type of gate material: |
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+1 opp. to substrate, -1 same as substrate, 0 Al gate |
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@tab - @tab 1.0 |
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@item XJ @tab metallurgical junction depth |
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@tab meter @tab 0.0 @tab 1M |
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@item LD @tab lateral diffusion |
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@tab meter @tab 0.0 @tab 0.8M |
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@item UO @tab surface mobility |
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@tab @math{cm^2/Vs} @tab 600 @tab 700 |
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@item UCRIT @tab critical field for mobility degradation (MOS2 only) |
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@tab V/cm @tab 1.0e4 @tab 1.0e4 |
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@item UEXP @tab critical field exponent in mobility degradation (MOS2 only) |
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@tab - @tab 0.0 @tab 0.1 |
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@item UTRA @tab transverse field coeff. (mobility) (deleted for MOS2) |
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@tab - @tab 0.0 @tab 0.3 |
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@item VMAX @tab maximum drift velocity of carriers |
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@tab m/s @tab 0.0 @tab 5.0e4 |
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@item NEFF @tab total channel-charge (fixed and mobile) coefficient (MOS2 only) |
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@tab - @tab 1.0 @tab 5.0 |
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@item KF @tab flicker noise coefficient |
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@tab - @tab 0.0 @tab 1.0e-26 |
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@item AF @tab flicker noise exponent |
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@tab - @tab 1.0 @tab 1.2 |
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@item FC @tab coefficient for forward-bias depletion capacitance formula |
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@tab - @tab 0.5 |
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@item DELTA @tab width effect on threshold voltage (MOS2 and MOS3) |
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@tab - @tab 0.0 @tab 1.0 |
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@item THETA @tab mobility modulation (MOS3 only) |
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@tab 1/V @tab 0.0 @tab 0.1 |
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@item ETA @tab static feedback (MOS3 only) |
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@tab - @tab 0.0 @tab 1.0 |
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@item KAPPA @tab saturation field factor (MOS3 only) |
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@tab - @tab 0.2 @tab 0.5 |
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@item TNOM @tab parameter measurement temperature |
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@tab °C @tab 27 @tab 50 |
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@end multitable |
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The level 4 and level 5 (BSIM1 and BSIM2) parameters are all values |
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The level 4 and level 5 (BSIM1 and BSIM2) parameters are all values |
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arno
26 years ago