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@ -2,6 +2,7 @@ |
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Copyright 1990 Regents of the University of California. All rights reserved. |
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Author: 1985 Thomas L. Quarles |
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Modified: 2000 AlansFixes |
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Modified by Dietmar Warning 2003 |
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**********/ |
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/* perform the temperature update to the diode */ |
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@ -14,12 +15,10 @@ Modified: 2000 AlansFixes |
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#include "suffix.h" |
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int |
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DIOtemp(inModel,ckt) |
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GENmodel *inModel; |
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CKTcircuit *ckt; |
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DIOtemp(GENmodel *inModel, CKTcircuit *ckt) |
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{ |
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DIOmodel *model = (DIOmodel*)inModel; |
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double xfc; |
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double xfc, xfcs; |
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double vte; |
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double cbv; |
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double xbv; |
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@ -27,6 +26,8 @@ DIOtemp(inModel,ckt) |
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double tol; |
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double vt; |
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double vtnom; |
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double difference; |
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double factor; |
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DIOinstance *here; |
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int iter; |
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char *emsg; |
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@ -58,22 +59,53 @@ DIOtemp(inModel,ckt) |
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&(model->DIOmodName)); |
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model->DIOdepletionCapCoeff=.95; |
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} |
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if(!model->DIOresistGiven || model->DIOresist==0) { |
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model->DIOconductance = 0; |
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/* limit sidewall depletion cap coeff to max of .95 */ |
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if(model->DIOdepletionSWcapCoeff>.95) { |
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(*(SPfrontEnd->IFerror))(ERR_WARNING, |
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"%s: coefficient Fcs too large, limited to 0.95", |
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&(model->DIOmodName)); |
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model->DIOdepletionSWcapCoeff=.95; |
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} |
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if((!model->DIOresistGiven) || (model->DIOresist==0)) { |
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model->DIOconductance = 0.0; |
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} else { |
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model->DIOconductance = 1/model->DIOresist; |
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} |
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xfc=log(1-model->DIOdepletionCapCoeff); |
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xfcs=log(1-model->DIOdepletionSWcapCoeff); |
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for(here=model->DIOinstances;here;here=here->DIOnextInstance) { |
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double egfet1,arg1,fact1,pbfact1,pbo,gmaold; |
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double fact2,pbfact,arg,egfet,gmanew; |
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double egfet1,arg1,fact1,pbfact1,pbo,gmaold,pboSW,gmaSWold; |
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double fact2,pbfact,arg,egfet,gmanew,gmaSWnew; |
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if (here->DIOowner != ARCHme) continue; |
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/* loop through all the instances */ |
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if(!here->DIOtempGiven) here->DIOtemp = ckt->CKTtemp; |
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if(!here->DIOdtempGiven) here->DIOdtemp = 0.0; |
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if(!here->DIOtempGiven) |
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here->DIOtemp = ckt->CKTtemp + here->DIOdtemp; |
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/* Junction grading temperature adjust */ |
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difference = here->DIOtemp - model->DIOnomTemp; |
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factor = 1.0 + (model->DIOgradCoeffTemp1 * difference) |
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+ (model->DIOgradCoeffTemp2 * difference * difference); |
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here->DIOtGradingCoeff = model->DIOgradingCoeff * factor; |
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/* limit temperature adjusted grading coeff |
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* to max of .9 |
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*/ |
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if(here->DIOtGradingCoeff>.9) { |
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(*(SPfrontEnd->IFerror))(ERR_WARNING, |
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"%s: temperature adjusted grading coefficient too large, limited to 0.9", |
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&(here->DIOname)); |
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here->DIOtGradingCoeff=.9; |
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} |
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vt = CONSTKoverQ * here->DIOtemp; |
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/* this part gets really ugly - I won't even try to |
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* explain these equations */ |
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* explain these equations */ |
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fact2 = here->DIOtemp/REFTEMP; |
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egfet = 1.16-(7.02e-4*here->DIOtemp*here->DIOtemp)/ |
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(here->DIOtemp+1108); |
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@ -86,26 +118,42 @@ DIOtemp(inModel,ckt) |
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1.1150877/(2*CONSTboltz*REFTEMP); |
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fact1 = model->DIOnomTemp/REFTEMP; |
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pbfact1 = -2 * vtnom*(1.5*log(fact1)+CHARGE*arg1); |
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pbo = (model->DIOjunctionPot-pbfact1)/fact1; |
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gmaold = (model->DIOjunctionPot -pbo)/pbo; |
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here->DIOtJctCap = model->DIOjunctionCap/ |
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(1+model->DIOgradingCoeff* |
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(1+here->DIOtGradingCoeff* |
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(400e-6*(model->DIOnomTemp-REFTEMP)-gmaold) ); |
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here->DIOtJctPot = pbfact+fact2*pbo; |
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gmanew = (here->DIOtJctPot-pbo)/pbo; |
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here->DIOtJctCap *= 1+model->DIOgradingCoeff* |
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here->DIOtJctCap *= 1+here->DIOtGradingCoeff* |
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(400e-6*(here->DIOtemp-REFTEMP)-gmanew); |
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pboSW = (model->DIOjunctionSWPot-pbfact1)/fact1; |
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gmaSWold = (model->DIOjunctionSWPot -pboSW)/pboSW; |
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here->DIOtJctSWCap = model->DIOjunctionSWCap/ |
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(1+model->DIOgradingSWCoeff* |
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(400e-6*(model->DIOnomTemp-REFTEMP)-gmaSWold) ); |
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here->DIOtJctSWPot = pbfact+fact2*pboSW; |
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gmaSWnew = (here->DIOtJctSWPot-pboSW)/pboSW; |
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here->DIOtJctSWCap *= 1+model->DIOgradingSWCoeff* |
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(400e-6*(here->DIOtemp-REFTEMP)-gmaSWnew); |
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here->DIOtSatCur = model->DIOsatCur * exp( |
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((here->DIOtemp/model->DIOnomTemp)-1) * |
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model->DIOactivationEnergy/(model->DIOemissionCoeff*vt) + |
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model->DIOsaturationCurrentExp/model->DIOemissionCoeff* |
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log(here->DIOtemp/model->DIOnomTemp) ); |
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here->DIOtSatSWCur = model->DIOsatSWCur * exp( |
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((here->DIOtemp/model->DIOnomTemp)-1) * |
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model->DIOactivationEnergy/(model->DIOemissionCoeff*vt) + |
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model->DIOsaturationCurrentExp/model->DIOemissionCoeff* |
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log(here->DIOtemp/model->DIOnomTemp) ); |
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/* the defintion of f1, just recompute after temperature adjusting |
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* all the variables used in it */ |
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here->DIOtF1=here->DIOtJctPot* |
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(1-exp((1-model->DIOgradingCoeff)*xfc))/ |
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(1-model->DIOgradingCoeff); |
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(1-exp((1-here->DIOtGradingCoeff)*xfc))/ |
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(1-here->DIOtGradingCoeff); |
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/* same for Depletion Capacitance */ |
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here->DIOtDepCap=model->DIOdepletionCapCoeff* |
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here->DIOtJctPot; |
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@ -118,35 +166,37 @@ DIOtemp(inModel,ckt) |
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/* and now to copute the breakdown voltage, again, using |
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* temperature adjusted basic parameters */ |
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if (model->DIObreakdownVoltageGiven){ |
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cbv=model->DIObreakdownCurrent; |
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if (cbv < here->DIOtSatCur*model->DIObreakdownVoltage/vt){ |
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cbv=here->DIOtSatCur*model->DIObreakdownVoltage/vt; |
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cbv=model->DIObreakdownCurrent*here->DIOarea*here->DIOm; |
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if (cbv < here->DIOtSatCur*here->DIOarea*here->DIOm * |
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model->DIObreakdownVoltage/vt) { |
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cbv=here->DIOtSatCur*here->DIOarea*here->DIOm * |
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model->DIObreakdownVoltage/vt; |
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emsg = MALLOC(100); |
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if(emsg == (char *)NULL) return(E_NOMEM); |
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(void)sprintf(emsg, |
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"%%s: breakdown current increased to %g to resolve", |
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"%%s: breakdown current increased to %g to resolve", |
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cbv); |
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(*(SPfrontEnd->IFerror))(ERR_WARNING,emsg,&(here->DIOname)); |
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FREE(emsg); |
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(*(SPfrontEnd->IFerror))(ERR_WARNING, |
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"incompatibility with specified saturation current",(IFuid*)NULL); |
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"incompatibility with specified saturation current",(IFuid*)NULL); |
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xbv=model->DIObreakdownVoltage; |
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} else { |
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tol=ckt->CKTreltol*cbv; |
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xbv=model->DIObreakdownVoltage-vt*log(1+cbv/ |
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here->DIOtSatCur); |
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(here->DIOtSatCur*here->DIOarea*here->DIOm)); |
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iter=0; |
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for(iter=0 ; iter < 25 ; iter++) { |
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xbv=model->DIObreakdownVoltage-vt*log(cbv/ |
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here->DIOtSatCur+1-xbv/vt); |
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xcbv=here->DIOtSatCur*(exp((model->DIObreakdownVoltage |
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-xbv)/vt)-1+xbv/vt); |
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(here->DIOtSatCur*here->DIOarea*here->DIOm)+1-xbv/vt); |
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xcbv=here->DIOtSatCur*here->DIOarea*here->DIOm * |
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(exp((model->DIObreakdownVoltage-xbv)/vt)-1+xbv/vt); |
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if (fabs(xcbv-cbv) <= tol) goto matched; |
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} |
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emsg = MALLOC(100); |
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if(emsg == (char *)NULL) return(E_NOMEM); |
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(void)sprintf(emsg, |
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"%%s: unable to match forward and reverse diode regions: bv = %g, ibv = %g", |
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"%%s: unable to match forward and reverse diode regions: bv = %g, ibv = %g", |
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xbv,xcbv); |
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(*(SPfrontEnd->IFerror))(ERR_WARNING,emsg,&here->DIOname); |
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FREE(emsg); |
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@ -154,10 +204,30 @@ DIOtemp(inModel,ckt) |
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matched: |
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here->DIOtBrkdwnV = xbv; |
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} |
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} |
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model->DIOf2=exp((1+model->DIOgradingCoeff)*xfc); |
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model->DIOf3=1-model->DIOdepletionCapCoeff* |
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(1+model->DIOgradingCoeff); |
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} |
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/* transit time temperature adjust */ |
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difference = here->DIOtemp - model->DIOnomTemp; |
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factor = 1.0 + (model->DIOtranTimeTemp1 * difference) |
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+ (model->DIOtranTimeTemp2 * difference * difference); |
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here->DIOtTransitTime = model->DIOtransitTime * factor; |
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/* Series resistance temperature adjust */ |
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here->DIOtConductance = model->DIOconductance; |
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if(model->DIOresistGiven && model->DIOresist!=0.0) { |
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difference = here->DIOtemp - model->DIOnomTemp; |
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factor = 1.0 + (model->DIOresistTemp1)*difference; |
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here->DIOtConductance = model->DIOconductance / factor; |
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} |
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here->DIOtF2=exp((1+here->DIOtGradingCoeff)*xfc); |
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here->DIOtF3=1-model->DIOdepletionCapCoeff* |
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(1+here->DIOtGradingCoeff); |
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here->DIOtF2SW=exp((1+model->DIOgradingSWCoeff)*xfcs); |
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here->DIOtF3SW=1-model->DIOdepletionSWcapCoeff* |
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(1+model->DIOgradingSWCoeff); |
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} /* instance */ |
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} /* model */ |
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return(OK); |
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} |
pnenzi
23 years ago