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Update to release version 504.7 now with selfheating

pre-master-46
dwarning 17 years ago
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  1. 212
      src/spicelib/devices/adms/mextram/admsva/opinfo.inc
  2. 123
      src/spicelib/devices/adms/mextram/admsva/opvars.inc

212
src/spicelib/devices/adms/mextram/admsva/opinfo.inc
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// Evaluate the operating point (outout) variables
begin
`ifdef __VAMS_COMPACT_MODELING__
// The external currents and the current gain
OP_ic = I(<c>); // External DC collector current
OP_ib = I(<b>); // External DC base Current
OP_betadc = OP_ic / OP_ib; // External DC Current gain
// The internal voltage differences
OP_vb2e1 = Vb2e1; // Internal base-emiter bias
OP_vb2c2 = Vb2c2; // Internal base-emiter bias
OP_vb2c1 = Vb2c1; // Internal base-collector bias including epilayer
OP_vb1c1 = Vb1b2 + Vb2c1; // External base-collector bias without contact resistances
OP_vc4c1 = Vc4c1; // Bias over intrinsic buried layer
OP_vc3c4 = Vc3c4; // Bias over extrinsic buried layer
OP_ve1e = - Vee1; // Bias over emiter resistance
// The branch currents
OP_in = In; // Main current
OP_ic1c2 = Ic1c2; // Epilayer current
OP_ib1b2 = Ib1b2; // Pinched-base current
OP_ib1 = Ib1; // Ideal forward base current
OP_sib1 = Ib1_s; // Ideal side-wall base current
OP_ib2 = Ib2; // Non-ideal forward base current
OP_ib3 = Ib3; // Non-ideal reverse base current
OP_iavl = Iavl; // Avalanche current
OP_iex = Iex; // Extrinsic reverse base current
OP_xiex = XIex; // Extrinsic reverse base current
`ifdef SUBSTRATE
OP_isub = Isub; // Substrate current
OP_xisub = XIsub; // Substrate current
OP_isf = Isf; // Substrate failure current
`endif
OP_ire = - Vee1 / RE_TM; // Current through emiter resistance
OP_irbc = Vbb1 / RBC_TM; // Current through constant base resistance
OP_ircc = Vcc3 * GCCxx_TM; // Current through collector contact resistance
OP_ircblx = Vc3c4 * GCCex_TM; // Current through extrinsic buried layer resistance
OP_ircbli = Vc4c1 * GCCin_TM; // Current through extrinsic buried layer resistance
// The branch charges
OP_qe = Qe; // Emitter charge or emitter neutral charge
OP_qte = Qte; // Base-emiter depletion charge
OP_sqte = Qte_s; // Sidewall base-emiter depletion charge
OP_qbe = Qbe; // Base-emiter diffusion charge
OP_qbc = Qbc; // Base-collector diffusion charge
OP_qtc = Qtc; // Base-colector depletion charge
OP_qepi = Qepi; // Epilayer diffusion charge
OP_qb1b2 = Qb1b2; // AC current crowding charge
OP_qtex = Qtex; // Extrinsic base-collector depletion charge
OP_xqtex = XQtex; // Extrinsic base-collector depletion charge
OP_qex = Qex; // Extrinsic base-collector diffusion charge
OP_xqex = XQex; // Extrinsic base-collector diffusion charge
`ifdef SUBSTRATE
OP_qts = Qts; // Collector substrate depletion charge
`endif
// Small signal equivalent circuit conductances and resistances
OP_gx = - ddx(In, V(e1)); // Forward transconductance
OP_gy = - ddx(In, V(c2)); // Reverse transconductance
OP_gz = - ddx(In, V(c1)); // Reverse transconductance
OP_sgpi = - ddx(Ib1_s, V(e))
- ddx(Ib1_s, V(e1)); // Conductance sidewal b-e junction
OP_gpix = - ddx(Ib1+Ib2, V(e1)); // Conductance floor b-e junction
OP_gpiy = - ddx(Ib1, V(c2)); // Early effect on recombination base current
OP_gpiz = - ddx(Ib1, V(c1)); // Early effect on recombination base current
OP_gmux = ddx( Iavl, V(e1)); // Early effect on avalanche current limitting
OP_gmuy = ddx( Iavl, V(c2)); // Conductance of avalanche current
OP_gmuz = - ddx(- Iavl, V(c1)); // Conductance of avalanche current
// Conductance extrinsic b-c current :
OP_gmuex = ddx(Iex+Ib3, V(e))
+ ddx(Iex+Ib3, V(b1))
+ ddx(Iex+Ib3, V(b2))
+ ddx(Iex+Ib3, V(e1))
+ ddx(Iex+Ib3, V(c2));
OP_xgmuex = ddx(XIex, V(b)) ; // Conductance extrinsic b-c current
OP_grcvy = - ddx(Ic1c2, V(c2)); // Conductance of epilayer current
OP_grcvz = - ddx(Ic1c2, V(c1)); // Conductance of epilayer current
OP_rbv = 1.0 / (- ddx(Ib1b2, V(b2)) - ddx(Ib1b2, V(c2))); // Base resistance
OP_grbvx = - ddx(Ib1b2, V(e)) - ddx(Ib1b2, V(e1)); // Early effect on base resistance
OP_grbvy = - ddx(Ib1b2, V(c2)); // Early effect on base resistance
OP_grbvz = - ddx(Ib1b2, V(c1)); // Early effect on base resistance
OP_re = RE_TM; // Emiter resistance
OP_rbc = RBC_TM; // Constant base resistance
OP_rcc = RCCxx_TM; // Collector Contact resistance
OP_rcblx = RCCex_TM; // Extrinsic buried layer resistance
OP_rcbli = RCCin_TM; // Extrinsic buried layer resistance
`ifdef SUBSTRATE
OP_gs = ddx(Isub, V(b)) + ddx(Isub, V(b1)); // Conductance parasitic PNP transitor
OP_xgs = ddx(XIsub, V(b)) ; // Conductance parasitic PNP transistor
OP_gsf = ddx(Isf, V(s)) ; // Conductance substrate failure current
`endif
// Small signal equivalent circuit capacitances
OP_scbe = - ddx(Qte_s, V(e)) - ddx(Qte_s, V(e1)); // Capacitance sidewall b-e junction
OP_cbex = - ddx(Qte + Qbe + Qe, V(e1)) ; // Capacitance floor b-e junction
OP_cbey = - ddx(Qbe, V(c2)); // Early effect on b-e diffusion junction
OP_cbez = - ddx(Qbe, V(c1)); // Early effect on b-e diffusion junction
OP_cbcx = - ddx(Qbc, V(e)) - ddx(Qbc, V(e1)); // Early effect on b-c diffusion junction
OP_cbcy = - ddx(Qtc + Qbc + Qepi, V(c2)); // Capacitance floor b-c junction
OP_cbcz = - ddx(Qtc + Qbc + Qepi, V(c1)); // Capacitance floor b-c junction
// Capacitance extrinsic b-c junction :
OP_cbcex = ddx(Qtex + Qex,V(e))
+ ddx(Qtex + Qex,V(b1 ))
+ ddx(Qtex + Qex,V(b2))
+ ddx(Qtex + Qex,V(e1))
+ ddx(Qtex + Qex,V(c2)) ;
// Capacitance extrinsic b-c junction :
OP_xcbcex = ddx(XQtex + XQex, V(b)) ;
OP_cb1b2 = - ddx(Qb1b2, V(b2)) - ddx(Qb1b2, V(c2)); // Capacitance AC current crowding
OP_cb1b2x = - ddx(Qb1b2, V(e)) - ddx(Qb1b2, V(e1)); // Cross-capacitance AC current crowding
OP_cb1b2y = - ddx(Qb1b2, V(c2)); // Cross-capacitance AC current crowding
OP_cb1b2z = - ddx(Qb1b2, V(c1)) ; // Cross-capacitance AC current crowding
`ifdef SUBSTRATE
OP_cts = ddx(Qts, V(s)) ; // Capacitance s-c junction
`endif
// Approximate small signal equivalent circuit
dydx = (OP_gx - OP_gmux) / (OP_grcvy + OP_gmuy - OP_gy);
dydz = (OP_gz - OP_grcvz - OP_gmuz) / (OP_grcvy + OP_gmuy - OP_gy);
gpi = OP_sgpi + OP_gpix + OP_gmux + OP_gpiz + OP_gmuz +
(OP_gpiy + OP_gmuy) * (dydx + dydz);
OP_gm = (OP_grcvy * (OP_gx - OP_gmux + // Transconductance
OP_gz - OP_gmuz) - OP_grcvz *
(OP_gy - OP_gmuy)) / (OP_grcvy + OP_gmuy - OP_gy);
OP_beta = OP_gm / gpi; // Current amplification
OP_gout = ((OP_gy - OP_gmuy) * OP_grcvz - // Output conductance
(OP_gz - OP_gmuz) * OP_grcvy) /
(OP_grcvy + OP_gmuy - OP_gy);
OP_gmu = OP_gpiz + OP_gmuz + (OP_gpiy + OP_gmuy) * dydz + // Feedback transconductance
OP_gmuex + OP_xgmuex;
OP_rb = RBC_TM + OP_rbv; // Base resistance
OP_rc = OP_rcc + OP_rcblx + OP_rcbli; // Collector resistance
OP_cbe = OP_cbex + OP_scbe + OP_cbcx + // Base-emitter capacitance
(OP_cbey + OP_cbcy) * dydx + CBEO_M;
OP_cbc = (OP_cbey + OP_cbcy) * dydz + OP_cbcz + // Base-collector capacitance
OP_cbcex + OP_xcbcex + CBCO_M;
// Quantities to describe internal state of the model
gammax = (OP_gpix + OP_gmux - OP_grbvx) * OP_rbv;
gammay = (OP_gpiy + OP_gmuy - OP_grbvy) * OP_rbv;
gammaz = (OP_gpiz + OP_gmuz - OP_grbvz) * OP_rbv;
gbfx = OP_gpix + OP_sgpi * (1.0 + gammax);
gbfy = OP_gpiy + OP_sgpi * gammay;
gbfz = OP_gpiz + OP_sgpi * gammaz;
// RvdT March 2008:
alpha_ft = (1.0 + (OP_grcvy * dydx * OP_rc) +
(OP_gx + gbfx + (OP_gy + gbfy) * dydx) * RE_TM)/
(1.0 - (OP_grcvz + OP_grcvy * dydz) * OP_rc -
(OP_gz + gbfz + (OP_gy + gbfy) * dydz) * RE_TM);
rx = pow((OP_grcvy * dydx + alpha_ft * (OP_grcvz + OP_grcvy * dydz)), -1);
rz = alpha_ft * rx;
ry = (1.0 - OP_grcvz * rz) / OP_grcvy;
rb1b2 = gammax * rx + gammay * ry + gammaz * rz;
rex = rz + rb1b2 - OP_rcbli;
xrex = rex + RBC_TM * ((gbfx + OP_gmux) * rx + (gbfy + OP_gmuy) * ry +
(gbfz + OP_gmuz) * rz) - OP_rcbli - OP_rcblx;
taut = OP_scbe * (rx + rb1b2) + (OP_cbex + OP_cbcx) * rx + (OP_cbey + OP_cbcy) *
ry + (OP_cbez + OP_cbcz) * rz + OP_cbcex * rex + OP_xcbcex * xrex +
(CBEO_M + CBCO_M) * (xrex - RCCxx_TM);
OP_ft = 1.0 / (2.0 * `PI * taut); // Good approximation for cut-off frequency
OP_iqs = Iqs; // Current at onset of quasi-saturation
OP_xiwepi = xi_w; // Thickness of injection layer
OP_vb2c2star = Vb2c2star; // Physical value of internal base-collector bias
//self-heating
`ifdef SELFHEATING
OP_pdiss = power; // Dissipation
`endif
OP_tk = Tk; // Actual temperature
`endif
end

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//
// Operation point (output) variables
//
// The external currents and current gain
`OPP(OP_ic, A, External DC collector current)
`OPP(OP_ib, A, External DC base current)
`OPP(OP_betadc, , External DC current gain Ic/Ib)
// The internal biases
`OPP(OP_vb2e1, V, Internal base-emitter bias)
`OPP(OP_vb2c2, V, Internal base-collector bias)
`OPP(OP_vb2c1, V, Internal base-collector bias including epilayer)
`OPP(OP_vb1c1, V, External base-collector bias without contact resistances)
`OPP(OP_vc4c1, V, Bias over intrinsic buried layer)
`OPP(OP_vc3c4, V, Bias over extrinsic buried layer)
`OPP(OP_ve1e, V, Bias over emitter resistance)
// The actual currents
`OPP(OP_in, A, Main current)
`OPP(OP_ic1c2, A, Epilayer current)
`OPP(OP_ib1b2, A, Pinched-base current)
`OPP(OP_ib1, A, Ideal forward base current)
`OPP(OP_sib1, A, Ideal side-wall base current)
`OPP(OP_ib2, A, Non-ideal forward base current)
`OPP(OP_ib3, A, Non-ideal reverse base current)
`OPP(OP_iavl, A, Avalanche current)
`OPP(OP_iex, A, Extrinsic reverse base current)
`OPP(OP_xiex, A, Extrinsic reverse base current)
`OPP(OP_isub, A, Substrate current)
`OPP(OP_xisub, A, Substrate current)
`OPP(OP_isf, A, Substrate failure current)
`OPP(OP_ire, A, Current through emitter resistance)
`OPP(OP_irbc, A, Current through constant base resistance)
`OPP(OP_ircblx, A, Current through extrinsic buried layer resistance)
`OPP(OP_ircbli, A, Current through intrinsic buried layer resistance)
`OPP(OP_ircc, A, Current through collector contact resistance)
//The actual charges
`OPP(OP_qe, C, Emitter charge or emitter neutral charge)
`OPP(OP_qte, C, Base-emitter depletion charge)
`OPP(OP_sqte, C, Sidewall base-emitter depletion charge)
`OPP(OP_qbe, C, Base-emitter diffusion charge)
`OPP(OP_qbc, C, Base_collector diffusion charge)
`OPP(OP_qtc, C, Base-collector depletion charge)
`OPP(OP_qepi, C, Epilayer diffusion charge)
`OPP(OP_qb1b2, C, AC current crowding charge)
`OPP(OP_qtex, C, Extrinsic base-collector depletion charge)
`OPP(OP_xqtex, C, Extrinsic base-collector depletion charge)
`OPP(OP_qex, C, Extrinsic base-collector diffusion charge)
`OPP(OP_xqex, C, Extrinsic base-collector diffusion charge)
`OPP(OP_qts, C, Collector-substrate depletion charge)
//Small signal equivalent circuit conductances and resistances
`OPP(OP_gx, S, Forward transconductance)
`OPP(OP_gy, S, Reverse transconductance)
`OPP(OP_gz, S, Reverse transconductance)
`OPP(OP_sgpi, S, Conductance sidewall b-e junction)
`OPP(OP_gpix, S, Conductance floor b-e junction)
`OPP(OP_gpiy, S, Early effect on recombination base current)
`OPP(OP_gpiz, S, Early effect on recombination base current)
`OPP(OP_gmux, S, Early effect on avalanche current limiting)
`OPP(OP_gmuy, S, Conductance of avalanche current)
`OPP(OP_gmuz, S, Conductance of avalanche current)
`OPP(OP_gmuex, S, Conductance of extrinsic b-c junction)
`OPP(OP_xgmuex, S, Conductance of extrinsic b-c junction)
`OPP(OP_grcvy, S, Conductance of epilayer current)
`OPP(OP_grcvz, S, Conductance of epilayer current)
`OPP(OP_rbv, Ohm, Base resistance)
`OPP(OP_grbvx, S, Early effect on base resistance)
`OPP(OP_grbvy, S, Early effect on base resistance)
`OPP(OP_grbvz, S, Early effect on base resistance)
`OPP(OP_re, Ohm, Emitter resistance)
`OPP(OP_rbc, Ohm, Constant base resistance)
`OPP(OP_rcc, Ohm, Collector contact resistance)
`OPP(OP_rcblx, Ohm, Extrinsic buried layer resistance)
`OPP(OP_rcbli, Ohm, Intrinsic buried layer resistance)
`OPP(OP_gs, S, Conductance parasistic PNP transistor)
`OPP(OP_xgs, S, Conductance parasistic PNP transistor)
`OPP(OP_gsf, S, Conductance substrate failure current)
//Small signal equivalent circuit capacitances
`OPP(OP_scbe, F, Capacitance sidewall b-e junction)
`OPP(OP_cbex, F, Capacitance floor b-e junction)
`OPP(OP_cbey, F, Early effect on b-e diffusion charge)
`OPP(OP_cbez, F, Early effect on b-e diffusion charge)
`OPP(OP_cbcx, F, Early effect on b-c diffusion charge)
`OPP(OP_cbcy, F, Capacitance floor b-c junction)
`OPP(OP_cbcz, F, Capacitance floor b-c junction)
`OPP(OP_cbcex, F, Capacitance extrinsic b-c junction)
`OPP(OP_xcbcex, F, Capacitance extrinsic b-c junction)
`OPP(OP_cb1b2, F, Capacitance AC current crowding)
`OPP(OP_cb1b2x, F, Cross-capacitance AC current crowding)
`OPP(OP_cb1b2y, F, Cross-capacitance AC current crowding)
`OPP(OP_cb1b2z, F, Cross-capacitance AC current crowding)
`OPP(OP_cts, F, Capacitance s-c junction)
//Approximate small signal equivalent circuit
`OPP(OP_gm, S,transconductance)
`OPP(OP_beta, , Current amplification)
`OPP(OP_gout, S, Output conductance)
`OPP(OP_gmu, S, Feedback transconductance)
`OPP(OP_rb, Ohm, Base resistance)
`OPP(OP_rc, Ohm, Collector resistance)
`OPP(OP_cbe, C, Base-emitter capacitance)
`OPP(OP_cbc, C, Base-collector capacitance)
//quantities to describe internal state of the model
`OPP(OP_ft, , Good approximation for cut-off frequency)
`OPP(OP_iqs, A, Current at onset of quasi-saturation)
`OPP(OP_xiwepi, m, Thickness of injection layer)
`OPP(OP_vb2c2star, V, Physical value of internal base-collector bias)
//self-heating
`OPP(OP_pdiss, W, Dissipation)
`OPP(OP_tk, K, Actual temperature)
//help variables
real dydx, dydz, gpi;
real gammax, gammay, gammaz, gbfx, gbfy, gbfz, alpha_ft;
real rx, ry, rz, rb1b2, rex, xrex, taut;
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