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@ -111,8 +111,6 @@ MOS1noise(int mode, int operation, GENmodel * genmodel, CKTcircuit * ckt, |
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vds = *(ckt->CKTstate0 + inst->MOS1vds); |
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vgs = *(ckt->CKTstate0 + inst->MOS1vgs); |
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vgd = vgs - vds; |
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beta = inst->MOS1tTransconductance * inst->MOS1m * |
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inst->MOS1w/(inst->MOS1l - 2 * model->MOS1latDiff); |
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vgst=(inst->MOS1mode==1?vgs:vgd) - model->MOS1type*inst->MOS1von; |
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if (vgst > 0) { |
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@ -124,8 +122,9 @@ MOS1noise(int mode, int operation, GENmodel * genmodel, CKTcircuit * ckt, |
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alpha = 1.0 - (vds*inst->MOS1mode/(model->MOS1type*inst->MOS1vdsat)); |
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} |
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} |
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double betap = beta*(1.0+model->MOS1lambda*(vds*inst->MOS1mode)); |
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Sid = 2.0 / 3.0 * betap * vgst * (1.0+alpha+alpha*alpha) / (1.0+alpha) * model->MOS1gdsnoi; |
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beta = inst->MOS1tTransconductance * inst->MOS1m * |
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inst->MOS1w/(inst->MOS1l - 2 * model->MOS1latDiff); |
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Sid = 2.0 / 3.0 * beta * vgst * (1.0+alpha+alpha*alpha) / (1.0+alpha) * model->MOS1gdsnoi; |
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} |
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NevalSrc( & noizDens[MOS1IDNOIZ], & lnNdens[MOS1IDNOIZ], |
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