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Capacitance and current comparison between models d and bulk diode in vdmos |
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D1 ad kd dio |
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.model dio d TT=1371n IS=2.13E-08 N=1.564 RS=0.0038 m=0.548 Vj=0.1 Cjo=3200pF |
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Va ad 0 DC -2 AC 1 $ DC 0.5 |
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Vk kd 0 0 |
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m1 d g s s IXTP6N100D2 |
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.MODEL IXTP6N100D2 VDMOS(KP=2.9 RS=0.1 RD=1.3 RG=1 VTO=-2.7 LAMBDA=0.03 CGDMAX=3000p CGDMIN=2p CGS=2915p a=1 TT=1371n IS=2.13E-08 N=1.564 RB=0.0038 m=0.548 Vj=0.1 Cjo=3200pF subthres=2.5m) |
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Vd d 0 DC 2 AC 1 $ DC -0.5 |
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Vg g 0 -5 $ transistor is off |
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Vs s 0 0 |
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.ac dec 10 1 10K |
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.control |
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save @d1[id] @m1[id] all |
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run |
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plot mag(i(Vs)) mag (i(Vk)) |
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plot ph(i(Vs)) ph(i(Vk)) |
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.endc |
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.end |