remove unused VDMOS_CAPZEROBIASBD/BDSW/BS/BSSW aka VDMOSCbd/bdsw/bs/bssw

src/spicelib/devices/vdmos/vdmos.c

@@ -79,11 +79,6 @@ IFparm VDMOSpTable[] = { /* parameters */
  OPU( "cqbd", VDMOS_CQBD, IF_REAL, "Capacitance due to bulk-drain charge storage"),
  OPU( "cqbs", VDMOS_CQBS, IF_REAL, "Capacitance due to bulk-source charge storage"),
 
- OP( "cbd0",   VDMOS_CAPZEROBIASBD,   IF_REAL, "Zero-Bias B-D junction capacitance"),
- OP( "cbdsw0", VDMOS_CAPZEROBIASBDSW, IF_REAL, " "),
- OP( "cbs0",   VDMOS_CAPZEROBIASBS,   IF_REAL, "Zero-Bias B-S junction capacitance"),
- OP( "cbssw0", VDMOS_CAPZEROBIASBSSW, IF_REAL, " "),
-
  OPU( "qgs",      VDMOS_QGS,        IF_REAL,    "Gate-Source charge storage"),
  OPU( "qgd",      VDMOS_QGD,        IF_REAL,    "Gate-Drain charge storage"),
  OPU( "qgb",      VDMOS_QGB,        IF_REAL,    "Gate-Bulk charge storage"),

src/spicelib/devices/vdmos/vdmosask.c

@@ -152,18 +152,6 @@ VDMOSask(CKTcircuit *ckt, GENinstance *inst, int which, IFvalue *value,
         case VDMOS_CAPBS:
             value->rValue = here->VDMOScapbs;
             return(OK);
-        case VDMOS_CAPZEROBIASBD:
-            value->rValue = here->VDMOSCbd;
-            return(OK);
-        case VDMOS_CAPZEROBIASBDSW:
-            value->rValue = here->VDMOSCbdsw;
-            return(OK);
-        case VDMOS_CAPZEROBIASBS:
-            value->rValue = here->VDMOSCbs;
-            return(OK);
-        case VDMOS_CAPZEROBIASBSSW:
-            value->rValue = here->VDMOSCbssw;
-            return(OK);
         case VDMOS_VBD:
             value->rValue = *(ckt->CKTstate0 + here->VDMOSvbd);
             return(OK);

src/spicelib/devices/vdmos/vdmosdefs.h

@@ -437,10 +437,6 @@ enum {
     VDMOS_GBS,
     VDMOS_CAPBD,
     VDMOS_CAPBS,
-    VDMOS_CAPZEROBIASBD,
-    VDMOS_CAPZEROBIASBDSW,
-    VDMOS_CAPZEROBIASBS,
-    VDMOS_CAPZEROBIASBSSW,
     VDMOS_VBD,
     VDMOS_VBS,
     VDMOS_VGS,