dwarning
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284d4308db
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Add optional switch for separate bottom and sidewall diode model - configuration is dependent from model parameter RSW
Further sidewall knee current parameter IKP is implemented.
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4 months ago |
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dwarning
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7f75f09ecd
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general vdmos update
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4 months ago |
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dwarning
|
55e4f5377f
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VDMOS: apply m scaling fix for acld as well
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4 months ago |
Árpád Bűrmen
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8d26e8b2cb
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VDMOS scaling fixed.
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5 months ago |
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Árpád Bűrmen
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807ff2b90c
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Minor change in VDMOS that helps VADistiller.
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5 months ago |
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dwarning
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8c3d4d7990
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vdmos convtest needs type for vd - load hack not needed anymore
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5 months ago |
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dwarning
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420838e4e8
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vdmos: in case temp and dtemp is given - use dtemp and omit temp
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5 months ago |
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dwarning
|
9802c7d0c6
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correct gate and source resistor temperature update
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5 months ago |
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dwarning
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3281d0798a
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correct rthca connection
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5 months ago |
dwarning
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600ff13796
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Revert "Remove instance parameter temp. To specify offset to ambient temperature use dtemp instead."
This reverts commit 3340df46ca.
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5 months ago |
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dwarning
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ddfb52d134
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Revert "correct and simplify temp derivatives"
This reverts commit a6590d354f.
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5 months ago |
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dwarning
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a6590d354f
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correct and simplify temp derivatives
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5 months ago |
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dwarning
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3340df46ca
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Remove instance parameter temp. To specify offset to ambient temperature use dtemp instead.
Remove temp update double application for beta and series resistances and fix derivatives for selfheating model.
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5 months ago |
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dwarning
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931e223493
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correct init state vector for qth integration
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6 months ago |
Holger Vogt
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c5dd1bd379
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Typo
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6 months ago |
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dwarning
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2a5f9e3ba8
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correct xoi and xom defaults to Angstrom and clarify comments
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6 months ago |
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dwarning
|
1921d64163
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count level=3 model poly and metal capacitance in charge calculation
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6 months ago |
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Holger Vogt
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91c5fe7926
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Cosmetics: Indentation
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6 months ago |
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dwarning
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8b9047ed8a
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remove obsolete bracket
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6 months ago |
|
dwarning
|
056ca890fd
|
remove old commented strncmp version check code
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6 months ago |
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Árpád Bűrmen
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683e208d87
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BSIM4 version 4.8 is considered to be the latest, i.e. 4.8.3.
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6 months ago |
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Árpád Bűrmen
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c6a6bd9edb
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Scaling of NQS charge deficit with mult_q.
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6 months ago |
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Árpád Bűrmen
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06b73b4056
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ceqqjd, ceqqjs should be scaled with mult_q.
This fixes erratic simulation behavior when
mult_i != mult_q.
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6 months ago |
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Árpád Bűrmen
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535e22a502
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Fixed a bug causing mult_* factors to get scaled at each setup().
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6 months ago |
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Árpád Bűrmen
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740670805e
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Check if toxp+dtox!=toxe with double precision tolerance.
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7 months ago |
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Árpád Bűrmen
|
e4aa062156
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icvgs, icvds, icvbs exposed as BSIM4v8 parameters.
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7 months ago |
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Árpád Bűrmen
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5900f70438
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Fast version checks in BSIM4.
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7 months ago |
Brian Taylor
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57dd3342ef
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Enable CIDER with KLU for DC, OP, and TRAN analyses. Small signal AC analysis is not yet supported for CIDER complex valued device KLU matrices. The examples/cider testcases produce printed simulation result values which have slight differences between Sparse and KLU. Differences are probably expected and in a few cases are ~1-2%, sometimes a little more. This should be good enough for most CIDER analyses. Francesco did a good piece of work. Runtimes are significantly shorter with KLU.
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7 months ago |
|
dwarning
|
b19f5ca4c3
|
bsim4: unify error printout
|
7 months ago |
|
dwarning
|
ecac7a07a2
|
bsim4: reimplement mobility and binning extension
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7 months ago |
|
dwarning
|
82bf2169b1
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reply commit e5c162f1: dc sweep fails after transient sim
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7 months ago |
|
dwarning
|
a97dcda62b
|
prevent warning if NOBYPASS is not defined
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7 months ago |
|
dwarning
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32c50aa254
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adapt instance parameter extension to new bsim4 multiplier concept
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7 months ago |
|
dwarning
|
86c78150b7
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add KLU bindings for diode selfheating effect, bug #802
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7 months ago |
|
dwarning
|
5e21393fbb
|
prevent unused warning
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8 months ago |
|
dwarning
|
68c3fc1031
|
diode needs both current components (bottom and sidewall) for Vcrit and breakdown voltage calculation
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8 months ago |
|
dwarning
|
05bbb2aaa2
|
introduce aliases for certain diode breakdown model parameter
|
8 months ago |
|
dwarning
|
a0c7af575d
|
bsim4 update to version 4.8.3
|
9 months ago |
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Árpád Bűrmen
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cb944fdb7a
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icvgs, icvds, and icvbs should be IOP.
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9 months ago |
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Árpád Bűrmen
|
56ecfa9e69
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BSIM3 3.3.0 undeclared instance IC parameters.
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9 months ago |
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Árpád Bűrmen
|
2c76daf2d1
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MESFET m and ic parameters fixed.
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10 months ago |
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Árpád Bűrmen
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87aecbcba7
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dtemp bug fixed.
|
11 months ago |
|
dwarning
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7aa8ed0170
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Involve optional d-s shunt in ac and pz analysis
|
1 year ago |
|
dwarning
|
a271ac821a
|
Correct matrix entries for VDMOS pz analysis
|
1 year ago |
|
dwarning
|
34046a29c1
|
VDMOS: use Vdsat in mobility reduction formula
|
1 year ago |
|
Árpád Bűrmen
|
a8e54dfb31
|
Fixed MOS9 scaling.
|
11 months ago |
|
Árpád Bűrmen
|
cc8183a96c
|
Fixed MOS3 scaling.
|
11 months ago |
|
Árpád Bűrmen
|
fcbee261ac
|
Fixed MOS2 scaling.
|
12 months ago |
|
Árpád Bűrmen
|
8e2859d30d
|
Fixed MOS1 noise scaling.
|
1 year ago |
|
dwarning
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fed39f18c9
|
diode: introduce few parameter aliases for compatibility to other simulators
|
1 year ago |
