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155 lines
8.7 KiB

/**********
Copyright 1990 Regents of the University of California. All rights reserved.
Author: 1987 Thomas L. Quarles
Modified: 2000 AlansFixes
VDMOS: 2018 Holger Vogt, 2020 Dietmar Warning
**********/
#include "ngspice/ngspice.h"
#include "ngspice/devdefs.h"
#include "ngspice/ifsim.h"
#include "vdmosdefs.h"
#include "ngspice/suffix.h"
IFparm VDMOSpTable[] = { /* parameters */
IOPU("m", VDMOS_M, IF_REAL, "Multiplier"),
IP("off", VDMOS_OFF, IF_FLAG, "Device initially off"),
IOPU("icvds", VDMOS_IC_VDS, IF_REAL, "Initial D-S voltage"),
IOPU("icvgs", VDMOS_IC_VGS, IF_REAL, "Initial G-S voltage"),
IOPU("temp", VDMOS_TEMP, IF_REAL, "Instance temperature"),
IOPU("dtemp", VDMOS_DTEMP, IF_REAL, "Instance temperature difference"),
IP( "ic", VDMOS_IC, IF_REALVEC, "Vector of D-S, G-S voltages"),
IOP("thermal", VDMOS_THERMAL, IF_FLAG, "Thermal model switch on/off"),
OP( "id", VDMOS_CD, IF_REAL, "Drain current"),
OP( "is", VDMOS_CS, IF_REAL, "Source current"),
OP( "ig", VDMOS_CG, IF_REAL, "Gate current"),
OP( "vgs", VDMOS_VGS, IF_REAL, "Gate-Source voltage"),
OP( "vds", VDMOS_VDS, IF_REAL, "Drain-Source voltage"),
OP( "cgs", VDMOS_CAPGS, IF_REAL, "Gate-Source capacitance"),
OP( "cgd", VDMOS_CAPGD, IF_REAL, "Gate-Drain capacitance"),
OP( "cds", VDMOS_CAPDS, IF_REAL, "Drain-Source capacitance"),
OP( "idio", VDMOS_CDIO, IF_REAL, "Body diode current"),
OPU( "dnode", VDMOS_DNODE, IF_INTEGER, "Number of the drain node "),
OPU( "gnode", VDMOS_GNODE, IF_INTEGER, "Number of the gate node "),
OPU( "snode", VDMOS_SNODE, IF_INTEGER, "Number of the source node "),
OPU( "tempnode", VDMOS_TNODE, IF_INTEGER, "Number of temperature node"),
OPU( "tcasenode", VDMOS_TCASE, IF_INTEGER, "Number of 2nd temperature node"),
OPU( "dnodeprime", VDMOS_DNODEPRIME, IF_INTEGER, "Number of int. drain node"),
OPU( "snodeprime", VDMOS_SNODEPRIME, IF_INTEGER, "Number of int. source node "),
OP( "von", VDMOS_VON, IF_REAL, "Device on state voltage"),
OP( "rs", VDMOS_SOURCERESIST, IF_REAL, "Source resistance"),
OPU("sourceconductance", VDMOS_SOURCECONDUCT, IF_REAL, "Conductance of source"),
OP( "rd", VDMOS_DRAINRESIST, IF_REAL, "Drain conductance"),
OPU("drainconductance", VDMOS_DRAINCONDUCT, IF_REAL, "Conductance of drain"),
OP( "gm", VDMOS_GM, IF_REAL, "Transconductance"),
OP( "gds", VDMOS_GDS, IF_REAL, "Drain-Source conductance"),
OPU( "cqgs", VDMOS_CQGS, IF_REAL, "Capacitance due to gate-source charge storage"),
OPU( "cqgd", VDMOS_CQGD, IF_REAL, "Capacitance due to gate-drain charge storage"),
OPU( "qgs", VDMOS_QGS, IF_REAL, "Gate-Source charge storage"),
OPU( "qgd", VDMOS_QGD, IF_REAL, "Gate-Drain charge storage"),
OPU( "p", VDMOS_POWER, IF_REAL, "Instantaneous power"),
};
IFparm VDMOSmPTable[] = { /* model parameters */
/* basic device */
OP("type", VDMOS_MOD_TYPE, IF_STRING, "N-channel or P-channel MOS"),
IOP("vto", VDMOS_MOD_VTH, IF_REAL, "Threshold voltage"),
IOPR("vth0", VDMOS_MOD_VTH, IF_REAL, "Threshold voltage"),
IOP("kp", VDMOS_MOD_KP, IF_REAL, "Transconductance parameter"),
IOP("phi", VDMOS_MOD_PHI, IF_REAL, "Surface potential"),
IOP("lambda",VDMOS_MOD_LAMBDA,IF_REAL, "Channel length modulation"),
IOP("theta", VDMOS_MOD_THETA, IF_REAL, "Vgs dependence on mobility"),
IOP("rd", VDMOS_MOD_RD, IF_REAL, "Drain ohmic resistance"),
IOP("rs", VDMOS_MOD_RS, IF_REAL, "Source ohmic resistance"),
IOP("rg", VDMOS_MOD_RG, IF_REAL, "Gate ohmic resistance"),
IOP("tnom", VDMOS_MOD_TNOM, IF_REAL, "Parameter measurement temperature"),
IOP("kf", VDMOS_MOD_KF, IF_REAL, "Flicker noise coefficient"),
IOP("af", VDMOS_MOD_AF, IF_REAL, "Flicker noise exponent"),
IP("vdmosn", VDMOS_MOD_NMOS, IF_FLAG, "N type DMOSfet model"),
IP("vdmosp", VDMOS_MOD_PMOS, IF_FLAG, "P type DMOSfet model"),
IP("vdmos", VDMOS_MOD_DMOS, IF_REAL, "DMOS transistor"),
/* quasi saturation */
IOP("rq", VDMOS_MOD_RQ, IF_REAL, "Quasi saturation resistance fitting parameter"),
IOP("vq", VDMOS_MOD_VQ, IF_REAL, "Quasi saturation voltage fitting parameter"),
IOP("mtriode", VDMOS_MOD_MTRIODE, IF_REAL, "Conductance multiplier in triode region"),
/* temperature dependency */
IOP( "tcvth", VDMOS_MOD_TCVTH, IF_REAL, "Linear Vth0 temperature coefficient"),
IOPR("vtotc", VDMOS_MOD_TCVTH, IF_REAL, "Linear Vth0 temperature coefficient"),
IOP( "mu", VDMOS_MOD_MU, IF_REAL, "Exponent of gain temperature dependency"),
IOPR("bex", VDMOS_MOD_MU, IF_REAL, "Exponent of gain temperature dependency"),
IOP( "texp0", VDMOS_MOD_TEXP0, IF_REAL, "Drain resistance rd0 temperature exponent"),
IOP( "texp1", VDMOS_MOD_TEXP1, IF_REAL, "Drain resistance rd1 temperature exponent"),
IOP( "trd1", VDMOS_MOD_TRD1, IF_REAL, "Drain resistance linear temperature coefficient"),
IOP( "trd2", VDMOS_MOD_TRD2, IF_REAL, "Drain resistance quadratic temperature coefficient"),
IOP( "trg1", VDMOS_MOD_TRG1, IF_REAL, "Gate resistance linear temperature coefficient"),
IOP( "trg2", VDMOS_MOD_TRG2, IF_REAL, "Gate resistance quadratic temperature coefficient"),
IOP( "trs1", VDMOS_MOD_TRS1, IF_REAL, "Source resistance linear temperature coefficient"),
IOP( "trs2", VDMOS_MOD_TRS2, IF_REAL, "Source resistance quadratic temperature coefficient"),
IOP( "trb1", VDMOS_MOD_TRB1, IF_REAL, "Body resistance linear temperature coefficient"),
IOP( "trb2", VDMOS_MOD_TRB2, IF_REAL, "Body resistance quadratic temperature coefficient"),
/* weak inversion */
IOP("subshift", VDMOS_MOD_SUBSHIFT, IF_REAL, "Shift of weak inversion plot on the vgs axis"),
IOP("ksubthres", VDMOS_MOD_KSUBTHRES, IF_REAL, "Slope of weak inversion log current versus vgs"),
IOP("tksubthres1", VDMOS_MOD_TKSUBTHRES1, IF_REAL, "Linear temperature coefficient of ksubthres"),
IOP("tksubthres2", VDMOS_MOD_TKSUBTHRES2, IF_REAL, "Quadratic temperature coefficient of ksubthres"),
/* body diode */
IOP("bv", VDMOS_MOD_BV, IF_REAL, "Vds breakdown voltage"),
IOP("ibv", VDMOS_MOD_IBV, IF_REAL, "Current at Vds=bv"),
IOP("nbv", VDMOS_MOD_NBV, IF_REAL, "Vds breakdown emission coefficient"),
IOP("rds", VDMOS_MOD_RDS, IF_REAL, "Drain-source shunt resistance"),
IOP("rb", VDMOS_MOD_RB, IF_REAL, "Body diode ohmic resistance"),
IOP("n", VDMOS_MOD_N, IF_REAL, "Body diode emission coefficient"),
IOP("tt", VDMOS_MOD_TT, IF_REAL, "Body diode transit time"),
IOP("eg", VDMOS_MOD_EG, IF_REAL, "Body diode activation energy for temperature effect on Is"),
IOP("xti", VDMOS_MOD_XTI, IF_REAL, "Body diode saturation current temperature exponent"),
IOP("is", VDMOS_MOD_IS, IF_REAL, "Body diode saturation current"),
IOP("vj", VDMOS_MOD_VJ, IF_REAL, "Body diode junction potential"),
/* body diode capacitance (e.g. source-drain capacitance) */
IOP("fc", VDMOS_MOD_FC, IF_REAL, "Body diode coefficient for forward-bias depletion capacitance formula"),
IOPA("cjo", VDMOS_MOD_CJ, IF_REAL, "Zero-bias body diode junction capacitance"),
IOP("m", VDMOS_MOD_MJ, IF_REAL, "Body diode grading coefficient"),
/* gate-source and gate-drain capacitances */
IOPA("cgdmin", VDMOS_MOD_CGDMIN, IF_REAL, "Minimum non-linear G-D capacitance"),
IOPA("cgdmax", VDMOS_MOD_CGDMAX, IF_REAL, "Maximum non-linear G-D capacitance"),
IOPA("a", VDMOS_MOD_A, IF_REAL, "Non-linear Cgd capacitance parameter"),
IOPA("cgs", VDMOS_MOD_CGS, IF_REAL, "Gate-source capacitance"),
/* self heating */
IOP("rthjc", VDMOS_MOD_RTHJC, IF_REAL, "Self-heating thermal resistance"),
IOP("rthca", VDMOS_MOD_RTHCA, IF_REAL, "Self-heating thermal resistance"),
IOP("cthj", VDMOS_MOD_CTHJ, IF_REAL, "Self-heating thermal capacitance"),
/* soa check */
IOP("vgs_max", VDMOS_MOD_VGS_MAX, IF_REAL, "maximum voltage G-S branch"),
IOP("vgd_max", VDMOS_MOD_VGD_MAX, IF_REAL, "maximum voltage G-D branch"),
IOP("vds_max", VDMOS_MOD_VDS_MAX, IF_REAL, "maximum voltage D-S branch"),
IOP("vgsr_max", VDMOS_MOD_VGSR_MAX, IF_REAL, "maximum voltage G-S branch"),
IOP("vgdr_max", VDMOS_MOD_VGDR_MAX, IF_REAL, "maximum voltage G-D branch"),
};
char *VDMOSnames[] = {
"Drain",
"Gate",
"Source",
"Temp",
"Tcase"
};
int VDMOSnSize = NUMELEMS(VDMOSnames);
int VDMOSpTSize = NUMELEMS(VDMOSpTable);
int VDMOSmPTSize = NUMELEMS(VDMOSmPTable);
int VDMOSiSize = sizeof(VDMOSinstance);
int VDMOSmSize = sizeof(VDMOSmodel);