Added some examples.

22 years ago · 4af6137cd3
63 changed files with 4083 additions and 0 deletions
--- a/examples/TransImpedanceAmp/README
+++ b/examples/TransImpedanceAmp/README
@ -0,0 +1,41 @@
 This directory holds a SPICE netlist with SPICE2 POLY constructs in
 controlled sources as typically found in vendor models.  The circuit
 is just a two-stage transimpedance amp using an AD8009,
 along with some slow components (AD780 and OP177A) to set bias
 points.  Vendor models are used for all active components.
 Successfully running this test shows that you have successfully built
 the XSpice stuff with the POLY codemodel, and that you should be able
 to simulate SPICE netlists with embedded vendor models.
 To run this netlist, just do the following:
 [localhost]# ngspice
 ngspice 1 -> source output.net
 ngspice 2 -> run
 ngspice 3 -> plot Vout2
 (Note that when you read in the netlist, you will get a bunch of 
 warnings saying stuff like:
 Warning -- Level not specified on line "()"
 Using level 1.
 Also, ngspice will complain about:
 Error on line 50 : r:u101:1 u101:40 0 1e3 tc=7e-6
         unknown parameter (tc)
 Error on line 283 : .temp 0 25 50 75 100
         Warning: .TEMP card obsolete - use .options TEMP and TNOM
 You can ignore all this stuff . . . .)
 You should get a pop-up window showing two square pulses (the second
 smaller than the first) with a little bit of overshoot on the rising
 and falling edges.
 This stuff was done as an adjunct to work on the gEDA project.
 Information about gEDA is available at http://geda.seul.org/ .
 Please direct all questions/suggestions/bugs/complaints about XSpice
 extensions to ngspice to Stuart Brorson -- mailto:sdb@cloud9.net.
 6.23.2002 -- SDB.
--- a/examples/TransImpedanceAmp/output.net
+++ b/examples/TransImpedanceAmp/output.net
@ -0,0 +1,460 @@
 *********************************************************
 * Spice file generated by gnetlist                      *
 * spice-SDB version 3.30.2003 by SDB --                 *
 * provides advanced spice netlisting capability.        *
 * Documentation at http://www.brorson.com/gEDA/SPICE/   *
 *********************************************************
 * Command stuff
 .options gmin=1e-9
 .options abstol=1e-11
 * .ac dec 10 10MegHz 10 Ghz
 * Remainder of file
 R112 0 6 1Meg 
 R111 0 8 10Meg 
 R110 0 7 1Meg 
 Rref2in 11 VU780out 25000 
 Rref2fb VU2bias+ 11 33 
 C201 0 9 1uF 
 C202 10 0 1uF 
 XU200 0 11 10 9 VU2bias+ OP177A 
 R202 10 +5V 22 
 R201 -5V 9 22 
 Rref1in VU100in- VU780out 9130 
 Rref1fb VU1bias+ VU100in- 33 
 XU101 +5V 7 0 6 VU780out 8 AD780A 
 * AD780A SPICE Macromodel 5/93, Rev. A
 * AAG / PMI
 *
 * This version of the AD780 voltage reference model simulates the worst case
 * parameters of the 'A' grade.  The worst case parameters used
 * correspond to those in the data sheet.
 *
 * Copyright 1993 by Analog Devices, Inc.
 *
 * Refer to "README.DOC" file for License Statement.  Use of this model
 * indicates your acceptance with the terms and provisions in the License Statement.
 *
 *  NODE NUMBERS
 *              VIN
 *               |  TEMP
 *               |  |  GND
 *               |  |  |  TRIM
 *               |  |  |  |  VOUT
 *               |  |  |  |  |  RANGE
 *               |  |  |  |  |  |
 .SUBCKT AD780A  2  3  4  5  6  8
 *
 * BANDGAP REFERENCE
 *
 I1 4 40 DC 1.21174E-3
 R1 40 4 1E3 TC=7E-6
 EN 10 40 42 0 1
 G1 4 10 2 4 4.85668E-9
 F1 4 10 POLY(2) VS1 VS2 (0,2.42834E-5,3.8E-5)
 Q1 2 10 11 QT
 I2 11 4 DC 12.84E-6
 R2 11 3 1E3
 I3 3 4 DC 0
 *
 * NOISE VOLTAGE GENERATOR
 *
 VN1 41 0 DC 2
 DN1 41 42 DEN
 DN2 42 43 DEN
 VN2 0 43 DC 2
 *
 * INTERNAL OP AMP
 *
 G2 4 12 10 20 1.93522E-4
 R3 12 4 2.5837E9
 C1 12 4 6.8444E-11
 D1 12 13 DX
 V1 2 13 DC 1.2
 *
 * SECONDARY POLE @ 508 kHz
 *
 G3 4 14 12 4 1E-6
 R4 14 4 1E6
 C2 14 4 3.1831E-13
 *
 * OUTPUT STAGE
 *
 ISY 2 4 6.8282E-4
 FSY 2 4 V1 -1
 RSY 2 4 500E3
 *
 G4 4 15 14 4 25E-6
 R5 15 4 40E3
 Q2 4 15 16 QP
 I4 2 16 DC 100E-6
 Q3 4 16 18 QP
 R6 18 23 15
 R7 16 21 150E3
 R8 2 17 34.6
 Q4 17 16 19 QN
 R9 21 20 6.46E3
 R10 20 4 6.1E3
 R11 20 5 53E3
 R12 20 8 15.6E3
 I5 5 4 DC 0
 I6 8 4 DC 0
 VS1 21 19 DC 0
 VS2 23 21 DC 0
 L1 21 6 1E-7
 *
 * OUTPUT CURRENT LIMIT
 *
 FSC 15 4 VSC 1
 VSC 2 22 DC 0
 QSC 22 2 17 QN
 *
 .MODEL QT NPN(IS=1.68E-16 BF=1E4)
 .MODEL QN NPN(IS=1E-15 BF=1E3)
 .MODEL QP PNP(IS=1E-15 BF=1E3)
 .MODEL DX D(IS=1E-15)
 .MODEL DEN D(IS=1E-12 RS=2.425E+05 AF=1 KF=6.969E-16)
 .ENDS AD780A
 C101 0 U100V- 1uF 
 C102 U100V+ 0 1uF 
 XU100 0 VU100in- U100V+ U100V- VU1bias+ OP177A 
 * OP177A SPICE Macro-model                 12/90, Rev. B
 *                                           JCB / PMI
 *
 * Revision History:
 *   REV. B
 *     Re-ordered subcircuit call out nodes to put the 
 *     output node last.
 *     Changed Ios from 1E-9 to 0.5E-9
 *     Added F1 and F2 to fix short circuit current limit.
 *
 *
 * This version of the OP-177 model simulates the worst case 
 * parameters of the 'A' grade.  The worst case parameters
 * used correspond to those in the data book.
 *
 *
 * Copyright 1990 by Analog Devices, Inc.
 *
 * Refer to "README.DOC" file for License Statement.  Use of this model
 * indicates your acceptance with the terms and provisions in the License Statement.
 *
 * Node assignments
 *                non-inverting input
 *                | inverting input
 *                | | positive supply
 *                | | |  negative supply
 *                | | |  |  output
 *                | | |  |  |
 .SUBCKT OP177A   1 2 99 50 39
 *
 * INPUT STAGE & POLE AT 6 MHZ
 *
 R1   2   3    5E11
 R2   1   3    5E11
 R3   5  97    0.0606
 R4   6  97    0.0606
 CIN  1   2    4E-12
 C2   5   6    218.9E-9
 I1   4  51    1
 IOS  1   2    0.5E-9
 EOS  9  10    POLY(1)  30 33  10E-6  1
 Q1   5  2  7  QX
 Q2   6  9  8  QX
 R5   7   4    0.009
 R6   8   4    0.009
 D1   2   1    DX
 D2   1   2    DX
 EN   10  1    12  0  1
 GN1  0   2    15  0  1
 GN2  0   1    18  0  1
 *
 EREF  98 0    33  0  1
 EPLUS 97 0    99  0  1
 ENEG  51 0    50  0  1 
 *
 * VOLTAGE NOISE SOURCE WITH FLICKER NOISE
 *
 DN1  11  12   DEN
 DN2  12  13   DEN
 VN1  11   0   DC 2
 VN2  0   13   DC 2
 *
 * CURRENT NOISE SOURCE WITH FLICKER NOISE
 *
 DN3  14  15   DIN
 DN4  15  16   DIN
 VN3  14   0   DC 2
 VN4  0   16   DC 2
 *
 * SECOND CURRENT NOISE SOURCE
 *
 DN5  17  18   DIN
 DN6  18  19   DIN
 VN5  17   0   DC 2
 VN6  0   19   DC 2
 *
 * FIRST GAIN STAGE
 *
 R7   20 98     1
 G1   98 20     5  6  119.8
 D3   20 21     DX
 D4   22 20     DX
 E1   97 21     POLY(1) 97 33 -2.4 1
 E2   22 51     POLY(1) 33 51 -2.4 1
 *
 * GAIN STAGE & DOMINANT POLE AT 0.127 HZ
 *
 R8   23 98     1.253E9
 C3   23 98     1E-9
 G2   98 23     20 33  33.3E-6
 V1   97 24     1.8
 V2   25 51     1.8
 D5   23 24     DX
 D6   25 23     DX
 *
 * NEGATIVE ZERO AT -4MHZ
 *
 R9   26 27     1
 C4   26 27     -39.75E-9
 R10  27 98     1E-6
 E3   26 98     23 33  1E6
 *
 * COMMON-MODE GAIN NETWORK WITH ZERO AT 63 HZ
 *
 R13  30 31     1
 L2   31 98     2.52E-3
 G4   98 30     3  33  0.316E-6
 D7   30 97     DX
 D8   51 30     DX
 *
 * POLE AT 2 MHZ
 *
 R14  32 98     1
 C5   32 98     79.5E-9
 G5   98 32     27 33  1
 *
 * OUTPUT STAGE
 *
 R15  33 97     1
 R16  33 51     1
 GSY  99 50     POLY(1) 99 50 0.725E-3 0.0425E-3
 F1   34  0     V3  1
 F2   0  34     V4  1
 R17  34 99     400
 R18  34 50     400
 L3   34 39     2E-7
 G6   37 50     32 34  2.5E-3
 G7   38 50     34 32  2.5E-3
 G8   34 99     99 32  2.5E-3
 G9   50 34     32 50  2.5E-3
 V3   35 34     6.8
 V4   34 36     4.4
 D9   32 35     DX
 D10  36 32     DX
 D11  99 37     DX
 D12  99 38     DX
 D13  50 37     DY
 D14  50 38     DY
 *
 * MODELS USED
 *
 .MODEL QX NPN(BF=333.3E6)
 .MODEL DX   D(IS=1E-15)
 .MODEL DY   D(IS=1E-15 BV=50)
 .MODEL DEN  D(IS=1E-12, RS=14.61K, KF=2E-17, AF=1)
 .MODEL DIN  D(IS=1E-12, RS=7.55E-6, KF=3E-15, AF=1)
 .ENDS
 R102 U100V+ +5V 22 
 R101 -5V U100V- 22 
 R98 0 VU2bias+ 1K 
 R99 0 VU1bias+ 1K 
 C95 VU2bias+ 0 100pF 
 * C96 0 5 1uF 
 * C97 4 0 1uF 
 Cphotodiode 0 Vinput 0.9pF 
 C99 0 VU1bias+ 100pF 
 R25 Vout2 2 250 
 C24 Vout1 VU1in- 1pF 
 R24 VU1in- 1 150 
 * C21 0 3 1uF 
 Cc Vout2 VU2in- 1pF 
 Rc Vout1 VU2in- 10 
 RL 0 Vout2 50 
 .TEMP 0 25 50 75 100
 C12 2 0 1.5pF 
 C11 0 V2- .01uF 
 C10 V2+ 0 .01uF 
 R13 +5V V2+ 5 
 R12 V2- -5V 5 
 R26 2 VU2in- 150 
 R11 Vout2 VU2in- 180 
 XU2 VU2bias+ VU2in- V2+ V2- Vout2 AD8009an 
 XU1 VU1bias+ VU1in- V1+ V1- Vout1 AD8009an 
 ***** AD8009 SPICE model       Rev B SMR/ADI 8-21-97
 * Copyright 1997 by Analog Devices, Inc.
 * Refer to "README.DOC" file for License Statement.  Use of this model
 * indicates your acceptance with the terms and provisions in the License Statement.
 * rev B of this model corrects a problem in the output stage that would not
 * correctly reflect the output current to the voltage supplies
 * This model will give typical performance characteristics
 * for the following parameters;
 *     closed loop gain and phase vs bandwidth
 *     output current and voltage limiting
 *     offset voltage (is static, will not vary with vcm)
 *     ibias (again, is static, will not vary with vcm)
 *     slew rate and step response performance
 *     (slew rate is based on 10-90% of step response)
 *     current on output will be reflected to the supplies 
 *     vnoise, referred to the input
 *     inoise, referred to the input
 *     distortion is not characterized
 * Node assignments
 *                non-inverting input
 *                | inverting input
 *                | | positive supply
 *                | | |  negative supply
 *                | | |  |  output
 *                | | |  |  |
 .SUBCKT AD8009an 1 2 99 50 28
 * input stage *
 q1 50 3 5 qp1
 q2 99 5 4 qn1
 q3 99 3 6 qn2
 q4 50 6 4 qp2
 i1 99 5 1.625e-3
 i2 6 50 1.625e-3
 cin1 1 98 2.6e-12
 cin2 2 98 1e-12
 v1 4 2 0
 * input error sources *
 eos 3 1 poly(1) 20 98 2e-3 1
 fbn 2 98 poly(1) vnoise3 50e-6 1e-3
 fbp 1 98 poly(1) vnoise3 50e-6 1e-3
 * slew limiting stage *
 fsl 98 16 v1 1
 dsl1 98 16 d1
 dsl2 16 98 d1
 dsl3 16 17 d1
 dsl4 17 16 d1
 rsl  17 18 0.22
 vsl  18 98 0
 * gain stage *
 f1 98 7 vsl 2
 rgain 7 98 2.5e5
 cgain 7 98 1.25e-12
 dcl1 7 8 d1
 dcl2 9 7 d1
 vcl1 99 8 1.83
 vcl2 9 50 1.83
 gcm 98 7 poly(2) 98 0 30 0 0 1e-5 1e-5
 * second pole *
 epole 14 98 7 98 1
 rpole 14 15 1
 cpole 15 98 2e-10
 * reference stage *
 eref 98 0 poly(2) 99 0 50 0 0 0.5 0.5 
 ecmref 30 0 poly(2) 1 0 2 0 0 0.5 0.5
 * vnoise stage *
 rnoise1 19 98 4.6e-3
 vnoise1 19 98 0
 vnoise2 21 98 0.53
 dnoise1 21 19 dn
 fnoise1 20 98 vnoise1 1
 rnoise2 20 98 1
 * inoise stage *
 rnoise3 22 98 8.18e-6
 vnoise3 22 98 0
 vnoise4 24 98 0.575
 dnoise2 24 22 dn
 fnoise2 23 98 vnoise3 1
 rnoise4 23 98 1
 * buffer stage *
 gbuf 98 13 15 98 1e-2
 rbuf 98 13 1e2
 * output current reflected to supplies *
 fcurr 98 40 voc 1
 vcur1 26 98 0
 vcur2 98 27 0
 dcur1 40 26 d1
 dcur2 27 40 d1
 * output stage *
 vo1 99 90 0
 vo2 91 50 0
 fout1 0 99 poly(2) vo1 vcur1 -9.27e-3 1 -1
 fout2 50 0 poly(2) vo2 vcur2 -9.27e-3 1 -1 
 gout1 90 10 13 99 0.5
 gout2 91 10 13 50 0.5
 rout1 10 90 2
 rout2 10 91 2
 voc 10 28 0
 rout3 28 98 1e6
 dcl3 13 11 d1
 dcl4 12 13 d1
 vcl3 11 10 -0.445
 vcl4 10 12 -0.445
 .model qp1 pnp()
 .model qp2 pnp()
 .model qn1 npn()
 .model qn2 npn()
 .model d1  d()
 .model dn  d(af=1 kf=1e-8)
 .ends
 R6 1 Vout1 250 
 C3 1 0 1.5pF 
 V3 VU1in- Vinput DC 0V 
 * .INCLUDE /home/sdb/OpticalReceiver/Simulation.cmd
 R5 -5V Vout1 1K 
 I1 0 Vinput AC 1 PWL (0ns 0mA 1nS 0mA 1.01nS 1mA 10nS 1mA 10.01nS 0mA 20nS 0mA 20.01nS .1mA 30nS .1mA 30.01nS 0mA)
 R4 V1- -5V 5 
 C2 0 V1- .01uF 
 V2 -5V 0 DC -5V
 R2 VU1in- Vout1 180 
 V1 +5V 0 DC 5V
 C1 V1+ 0 .01uF 
 R1 +5V V1+ 5 
 * When run, this SPICE file should output a square waveform
 * with a little overshoot
 .tran 0.05ns 40ns
 .plot Vout2
 .control
 codemodel analog.lib
 run
 .endc
 .END
--- a/examples/cider/bicmos/bicmos.lib
+++ b/examples/cider/bicmos/bicmos.lib
@ -0,0 +1,127 @@
 .MODEL M_NPN nbjt level=2
 + title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR
 + * Since, we are only simulating half of a device, we double the unit width
 + * 1.0 um emitter length
 + options defw=2.0u
 + output dc.debug stat
 + 
 + *x.mesh w=2.5 n=5
 + x.mesh w=2.0  h.e=0.05 h.m=0.2 r=1.5
 + x.mesh w=0.5  h.s=0.05 h.m=0.1 r=1.5
 + 
 + y.mesh l=-0.2 n=1
 + y.mesh l= 0.0 n=5
 + y.mesh w=0.10 h.e=0.002 h.m=0.01  r=1.5
 + y.mesh w=0.15 h.s=0.002 h.m=0.01  r=1.5
 + y.mesh w=0.35 h.s=0.01  h.m=0.2   r=1.5
 + y.mesh w=0.40 h.e=0.05  h.m=0.2   r=1.5
 + y.mesh w=0.30 h.s=0.05  h.m=0.1   r=1.5
 +
 + domain num=1 material=1 x.l=2.0 y.h=0.0
 + domain num=2 material=2 x.h=2.0 y.h=0.0
 + domain num=3 material=3 y.l=0.0
 + material num=1 polysilicon
 + material num=2 oxide
 + material num=3 silicon
 +
 + elec num=1 x.l=0.0  x.h=0.0  y.l=1.1  y.h=1.3
 + elec num=2 x.l=0.0  x.h=0.5  y.l=0.0  y.h=0.0
 + elec num=3 x.l=2.0  x.h=3.0  y.l=-0.2 y.h=-0.2
 +
 + doping gauss n.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0
 + + char.l=0.047 lat.rotate
 + doping gauss p.type conc=1e19 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0
 + + char.l=0.094 lat.rotate
 + doping unif  n.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3
 + doping gauss n.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3
 + + char.l=0.100 lat.rotate
 +
 + method ac=direct itlim=10
 + models bgn srh auger conctau concmob fieldmob
 .MODEL M_NMOS_1 numos
 + output dc.debug stat
 + title 1.0um NMOS Device
 + 
 + x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
 + x.mesh w=0.4 h.s=0.005 h.m=0.1 r=2.0
 + x.mesh w=0.4 h.e=0.005 h.m=0.1 r=2.0
 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
 + x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
 +
 + y.mesh l=-.0200 n=1
 + y.mesh l=0.0 n=6
 + y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
 + y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
 + y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
 +
 + region num=1 material=1 y.h=0.0
 + region num=2 material=2 y.l=0.0
 + interface dom=2 nei=1 x.l=1.0 x.h=2.0 layer.width=0.0
 + material num=1 oxide
 + material num=2 silicon
 +
 + elec num=1 x.l=2.5 x.h=3.1	y.l=0.0 y.h=0.0
 + elec num=2 x.l=1.0  x.h=2.0	iy.l=1  iy.h=1
 + elec num=3 x.l=-0.1 x.h=0.5	y.l=0.0 y.h=0.0
 + elec num=4 x.l=-0.1 x.h=3.1   y.l=2.0 y.h=2.0
 +
 + doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=3.1 y.l=0.0
 + + char.l=0.30
 + doping unif p.type conc=5.0e15 x.l=-0.1 x.h=3.1 y.l=0.0 y.h=2.1
 + doping gauss n.type conc=4e17  x.l=-0.1 x.h=1.0 y.l=0.0 y.h=0.0
 + + char.l=0.16 lat.rotate ratio=0.65
 + doping gauss n.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
 + + char.l=0.03 lat.rotate ratio=0.65
 + doping gauss n.type conc=4e17  x.l=2.0 x.h=3.1 y.l=0.0 y.h=0.0
 + + char.l=0.16 lat.rotate ratio=0.65
 + doping gauss n.type conc=1e20  x.l=2.05 x.h=3.1 y.l=0.0 y.h=0.08
 + + char.l=0.03 lat.rotate ratio=0.65
 +
 + contact num=2 workf=4.10
 + models concmob fieldmob surfmob srh auger conctau bgn ^aval
 + method ac=direct itlim=10 onec
 .MODEL M_PMOS_1 numos
 + title 1.0um PMOS Device
 + 
 + x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
 + x.mesh w=0.4 h.s=0.005 h.m=0.1 r=2.0
 + x.mesh w=0.4 h.e=0.005 h.m=0.1 r=2.0
 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
 + x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
 +
 + y.mesh l=-.0200 n=1
 + y.mesh l=0.0 n=6
 + y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
 + y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
 + y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
 +
 + region num=1 material=1 y.h=0.0
 + region num=2 material=2 y.l=0.0
 + interface dom=2 nei=1 x.l=1.0 x.h=2.0 layer.width=0.0
 + material num=1 oxide
 + material num=2 silicon
 +
 + elec num=1 x.l=2.5 x.h=3.1	y.l=0.0 y.h=0.0
 + elec num=2 x.l=1.0  x.h=2.0	iy.l=1  iy.h=1
 + elec num=3 x.l=-0.1 x.h=0.5	y.l=0.0 y.h=0.0
 + elec num=4 x.l=-0.1 x.h=3.1   y.l=2.0 y.h=2.0
 +
 + doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=3.1 y.l=0.0
 + + char.l=0.30
 + doping unif n.type conc=5.0e15 x.l=-0.1 x.h=3.1 y.l=0.0 y.h=2.1
 + doping gauss p.type conc=4e17  x.l=-0.1 x.h=1.0 y.l=0.0 y.h=0.0
 + + char.l=0.16 lat.rotate ratio=0.65
 + doping gauss p.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
 + + char.l=0.03 lat.rotate ratio=0.65
 + doping gauss p.type conc=4e17  x.l=2.0 x.h=3.1 y.l=0.0 y.h=0.0
 + + char.l=0.16 lat.rotate ratio=0.65
 + doping gauss p.type conc=1e20  x.l=2.05 x.h=3.1 y.l=0.0 y.h=0.08
 + + char.l=0.03 lat.rotate ratio=0.65
 +
 + contact num=2 workf=5.29
 + models concmob fieldmob surfmob srh auger conctau bgn ^aval
 + method ac=direct itlim=10 onec
--- a/examples/cider/bicmos/bicmpd.cir
+++ b/examples/cider/bicmos/bicmpd.cir
@ -0,0 +1,26 @@
 BiCMOS Pulldown Circuit
 VSS 2 0 0v
 VIN 3 2 0v (PULSE 0.0v 4.2v 0ns 1ns 1ns 9ns 20ns)
 M1  8 3 5 11 M_NMOS_1 W=4u L=1u
 VD  4 8 0v
 VBK 11 2 0v
 Q1  10 7 9   M_NPN AREA=8
 VC  4 10 0v
 VB  5 7 0v
 VE  9 2 0v
 CL  4 6 1pF
 VL  6 2 0v
 .IC V(10)=5.0v V(7)=0.0v 
 .TRAN 0.1ns 5ns 0ns 0.1ns
 .PLOT TRAN I(VIN)
 .include bicmos.lib
 .OPTIONS ACCT BYPASS=1
 .END
--- a/examples/cider/bjt/astable.cir
+++ b/examples/cider/bjt/astable.cir
@ -0,0 +1,34 @@
 Astable multivibrator
 vin 5 0 dc 0 pulse(0 5 0 1us 1us 100us 100us)
 vcc 6 0 5.0
 rc1 6 1 1k
 rc2 6 2 1k
 rb1 6 3 30k
 rb2 5 4 30k
 c1 1 4 150pf
 c2 2 3 150pf
 q1 1 3 0 qmod area = 100p
 q2 2 4 0 qmod area = 100p
 .option acct bypass=1
 .tran 0.05us 8us 0us 0.05us
 .print tran v(1) v(2) v(3) v(4)
 .model qmod nbjt level=1
 + x.mesh node=1  loc=0.0
 + x.mesh node=61 loc=3.0
 + region num=1 material=1
 + material num=1 silicon nbgnn=1e17 nbgnp=1e17
 + mobility material=1 concmod=sg fieldmod=sg
 + mobility material=1 elec major
 + mobility material=1 elec minor
 + mobility material=1 hole major
 + mobility material=1 hole minor
 + doping unif n.type conc=1e17 x.l=0.0 x.h=1.0
 + doping unif p.type conc=1e16 x.l=0.0 x.h=1.5
 + doping unif n.type conc=1e15 x.l=0.0 x.h=3.0
 + models bgnw srh conctau auger concmob fieldmob
 + options base.length=1.0 base.depth=1.25
 .end
--- a/examples/cider/bjt/colposc.cir
+++ b/examples/cider/bjt/colposc.cir
@ -0,0 +1,33 @@
 Colpitt's Oscillator Circuit
 r1 1 0 1
 q1 2 1 3 qmod area = 100p
 vcc 4 0 5 
 rl 4 2 750
 c1 2 3 500p
 c2 4 3 4500p
 l1 4 2 5uH
 re 3 6 4.65k
 vee 6 0 dc -15 pwl 0 -15 1e-9 -10 
 .tran 30n 12u
 .print tran v(2)
 .model qmod nbjt level=1
 + x.mesh node=1  loc=0.0
 + x.mesh node=61 loc=3.0
 + region num=1 material=1
 + material num=1 silicon nbgnn=1e17 nbgnp=1e17
 + mobility material=1 concmod=sg fieldmod=sg
 + mobility material=1 elec major
 + mobility material=1 elec minor
 + mobility material=1 hole major
 + mobility material=1 hole minor
 + doping unif n.type conc=1e17 x.l=0.0 x.h=1.0
 + doping unif p.type conc=1e16 x.l=0.0 x.h=1.5
 + doping unif n.type conc=1e15 x.l=0.0 x.h=3.0
 + models bgnw srh conctau auger concmob fieldmob
 + options base.length=1.0 base.depth=1.25
 .options acct bypass=1
 .end
--- a/examples/cider/bjt/ecp.cir
+++ b/examples/cider/bjt/ecp.cir
@ -0,0 +1,57 @@
 Emitter Coupled Pair
 VCC	1  0  5v
 VEE	2  0  0v
 RCP	1  11 10k
 RCN	1  21 10k
 VBBP	12 0  3v AC 1
 VBBN	22 0  3v
 IEE	13 2  0.1mA
 Q1	11 12 13 M_NPN AREA=8
 Q2	21 22 13 M_NPN AREA=8
 .DC VBBP 2.75v 3.25001v 10mv
 .PRINT V(21) V(11)
 .MODEL M_NPN nbjt level=2
 + title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR
 + * Since, we are only simulating half of a device, we double the unit width
 + * 1.0 um emitter length
 + options defw=2.0u
 + 
 + *x.mesh w=2.5 n=5
 + x.mesh w=2.0  h.e=0.05 h.m=0.2 r=1.5
 + x.mesh w=0.5  h.s=0.05 h.m=0.1 r=1.5
 + 
 + y.mesh l=-0.2 n=1
 + y.mesh l= 0.0 n=5
 + y.mesh w=0.10 h.e=0.002 h.m=0.01  r=1.5
 + y.mesh w=0.15 h.s=0.002 h.m=0.01  r=1.5
 + y.mesh w=0.35 h.s=0.01  h.m=0.2   r=1.5
 + y.mesh w=0.40 h.e=0.05  h.m=0.2   r=1.5
 + y.mesh w=0.30 h.s=0.05  h.m=0.1   r=1.5
 +
 + domain num=1 material=1 x.l=2.0 y.h=0.0
 + domain num=2 material=2 x.h=2.0 y.h=0.0
 + domain num=3 material=3 y.l=0.0
 + material num=1 polysilicon
 + material num=2 oxide
 + material num=3 silicon
 +
 + elec num=1 x.l=0.0  x.h=0.0  y.l=1.1  y.h=1.3
 + elec num=2 x.l=0.0  x.h=0.5  y.l=0.0  y.h=0.0
 + elec num=3 x.l=2.0  x.h=3.0  y.l=-0.2 y.h=-0.2
 +
 + doping gauss n.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0
 + + char.l=0.047 lat.rotate
 + doping gauss p.type conc=1e19 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0
 + + char.l=0.094 lat.rotate
 + doping unif  n.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3
 + doping gauss n.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3
 + + char.l=0.100 lat.rotate
 +
 + method ac=direct itlim=10
 + models bgn srh auger conctau concmob fieldmob
 .OPTIONS ACCT BYPASS=1
 .END
--- a/examples/cider/bjt/invchain.cir
+++ b/examples/cider/bjt/invchain.cir
@ -0,0 +1,38 @@
 4 Stage RTL Inverter Chain
 vin 1 0 dc 0v pwl 0ns 0v 1ns 5v
 vcc 12 0 dc 5.0v
 rc1 12 3 2.5k
 rb1 1 2 8k
 q1 3 2 0 qmod area = 100p
 rb2 3 4 8k
 rc2 12 5 2.5k
 q2 5 4 0 qmod area = 100p
 rb3 5 6 8k
 rc3 12 7 2.5k
 q3 7 6 0 qmod area = 100p
 rb4 7 8 8k
 rc4 12 9 2.5k
 q4 9 8 0 qmod area = 100p
 .print tran v(3) v(5) v(9)
 .tran 1e-9 10e-9
 .model qmod nbjt level=1
 + x.mesh node=1  loc=0.0
 + x.mesh node=61 loc=3.0
 + region num=1 material=1
 + material num=1 silicon nbgnn=1e17 nbgnp=1e17
 + mobility material=1 concmod=sg fieldmod=sg
 + mobility material=1 elec major
 + mobility material=1 elec minor
 + mobility material=1 hole major
 + mobility material=1 hole minor
 + doping unif n.type conc=1e17 x.l=0.0 x.h=1.0
 + doping unif p.type conc=1e16 x.l=0.0 x.h=1.5
 + doping unif n.type conc=1e15 x.l=0.0 x.h=3.0
 + models bgnw srh conctau auger concmob fieldmob
 + options base.length=1.0 base.depth=1.25
 .option acct bypass=1
 .end
--- a/examples/cider/bjt/meclgate.cir
+++ b/examples/cider/bjt/meclgate.cir
@ -0,0 +1,74 @@
 Motorola MECL III ECL gate
 *.dc vin -2.0 0 0.02
 .tran 0.2ns 20ns
 vee 22 0 -6.0
 vin 1 0 pulse -0.8 -1.8 0.2ns 0.2ns 0.2ns 10ns 20ns
 rs 1 2 50
 q1 4 2 6 qmod area = 100p
 q2 4 3 6 qmod area = 100p
 q3 5 7 6 qmod area = 100p
 q4 0 8 7 qmod area = 100p
 d1 8 9 dmod
 d2 9 10 dmod
 rp1 3 22 50k
 rc1 0 4 100
 rc2 0 5 112
 re 6 22 380
 r1 7 22 2k
 r2 0 8 350
 r3 10 22 1958
 q5 0 5 11 qmod area = 100p
 q6 0 4 12 qmod area = 100p
 rp2 11 22 560
 rp3 12 22 560
 q7 13 12 15 qmod area = 100p
 q8 14 16 15 qmod area = 100p
 re2 15 22 380
 rc3 0 13 100
 rc4 0 14 112
 q9 0 17 16 qmod area = 100p
 r4 16 22 2k
 r5 0 17 350
 d3 17 18 dmod
 d4 18 19 dmod
 r6 19 22 1958
 q10 0 14 20 qmod area = 100p
 q11 0 13 21 qmod area = 100p
 rp4 20 22 560
 rp5 21 22 560
 .model dmod d rs=40 tt=0.1ns cjo=0.9pf n=1 is=1e-14 eg=1.11 vj=0.8 m=0.5
 .model qmod nbjt level=1
 + x.mesh node=1  loc=0.0
 + x.mesh node=10 loc=0.9
 + x.mesh node=20 loc=1.1
 + x.mesh node=30 loc=1.4
 + x.mesh node=40 loc=1.6
 + x.mesh node=61 loc=3.0
 + region num=1 material=1
 + material num=1 silicon nbgnn=1e17 nbgnp=1e17
 + mobility material=1 concmod=sg fieldmod=sg
 + mobility material=1 elec major
 + mobility material=1 elec minor
 + mobility material=1 hole major
 + mobility material=1 hole minor
 + doping unif n.type conc=1e17 x.l=0.0 x.h=1.0
 + doping unif p.type conc=1e16 x.l=0.0 x.h=1.5
 + doping unif n.type conc=1e15 x.l=0.0 x.h=3.0
 + models bgnw srh conctau auger concmob fieldmob
 + options base.length=1.0 base.depth=1.25
 .options acct bypass=1
 .print tran v(12) v(21)
 .end
--- a/examples/cider/bjt/pebjt.lib
+++ b/examples/cider/bjt/pebjt.lib
@ -0,0 +1,71 @@
 **
 * Numerical models for a
 * polysilicon emitter complementary bipolar process.
 * The default device size is 1um by 10um (LxW)
 **
 .model M_NPN nbjt level=1
 + title One-Dimensional Numerical Bipolar
 + options base.depth=0.15 base.area=0.1 base.length=1.0 defa=10p
 + x.mesh loc=-0.2 n=1
 + x.mesh loc=0.0  n=51
 + x.mesh wid=0.15 h.e=0.0001 h.m=.004 r=1.2
 + x.mesh wid=1.15 h.s=0.0001 h.m=.004 r=1.2
 + domain   num=1 material=1 x.l=0.0
 + domain   num=2 material=2 x.h=0.0
 + material num=1 silicon
 + mobility mat=1 concmod=ct fieldmod=ct
 + material num=2 polysilicon
 + mobility mat=2 concmod=ct fieldmod=ct
 + doping gauss n.type conc=3e20  x.l=-0.2 x.h=0.0 char.len=0.047
 + doping gauss p.type conc=5e18  x.l=-0.2 x.h=0.0 char.len=0.100
 + doping unif  n.type conc=1e16  x.l=0.0 x.h=1.3
 + doping gauss n.type conc=5e19  x.l=1.3 x.h=1.3 char.len=0.100
 + models bgn srh auger conctau concmob fieldmob ^aval
 + method devtol=1e-12 ac=direct itlim=15
 .model M_NPSUB numd level=1
 + title One-Dimensional Numerical Collector-Substrate Diode
 + options defa=10p
 + x.mesh loc=1.3  n=1
 + x.mesh loc=2.0  n=101
 + domain   num=1 material=1
 + material num=1 silicon
 + mobility mat=1 concmod=ct fieldmod=ct
 + doping gauss n.type conc=5e19  x.l=1.3 x.h=1.3 char.len=0.100
 + doping unif  p.type conc=1e15  x.l=0.0 x.h=2.0
 + models bgn srh auger conctau concmob fieldmob ^aval
 + method devtol=1e-12 itlim=10
 .model M_PNP nbjt level=1
 + title One-Dimensional Numerical Bipolar
 + options base.depth=0.2 base.area=0.1 base.length=1.0 defa=10p
 + x.mesh loc=-0.2 n=1
 + x.mesh loc=0.0  n=51
 + x.mesh wid=0.20 h.e=0.0001 h.m=.004 r=1.2
 + x.mesh wid=1.10 h.s=0.0001 h.m=.004 r=1.2
 + domain   num=1 material=1 x.l=0.0
 + domain   num=2 material=2 x.h=0.0
 + material num=1 silicon
 + mobility mat=1 concmod=ct fieldmod=ct
 + material num=2 polysilicon
 + mobility mat=2 concmod=ct fieldmod=ct
 + doping gauss p.type conc=3e20  x.l=-0.2 x.h=0.0 char.len=0.047
 + doping gauss n.type conc=5e17  x.l=-0.2 x.h=0.0 char.len=0.200
 + doping unif  p.type conc=1e16  x.l=0.0 x.h=1.3
 + doping gauss p.type conc=5e19  x.l=1.3 x.h=1.3 char.len=0.100
 + models bgn srh auger conctau concmob fieldmob ^aval
 + method devtol=1e-12 ac=direct itlim=15
 .model M_PNSUB numd level=1
 + title One-Dimensional Numerical Collector-Substrate Diode
 + options defa=10p
 + x.mesh loc=1.3  n=1
 + x.mesh loc=2.0  n=101
 + domain   num=1 material=1
 + material num=1 silicon
 + mobility mat=1 concmod=ct fieldmod=ct
 + doping gauss p.type conc=5e19  x.l=1.3 x.h=1.3 char.len=0.100
 + doping unif  n.type conc=1e15  x.l=0.0 x.h=2.0
 + models bgn srh auger conctau concmob fieldmob ^aval
 + method devtol=1e-12 itlim=10
--- a/examples/cider/bjt/pz.cir
+++ b/examples/cider/bjt/pz.cir
@ -0,0 +1,16 @@
 PZ Analysis of a Common Emitter Amplifier
 Vcc 1 0 5v
 Vee 2 0 0v
 Vin 3 0 0.7838 AC 1
 RS  3 4 1K
 Q1  5 4 2 M_NPN AREA=4 SAVE
 RL  1 5 2.5k
 CL  5 0 0.1pF
 .INCLUDE pebjt.lib
 .PZ 3 0 5 0 vol pz
 .END
--- a/examples/cider/bjt/rtlinv.cir
+++ b/examples/cider/bjt/rtlinv.cir
@ -0,0 +1,29 @@
 RTL inverter
 vin 1 0 dc 1 pwl 0 4 1ns 0
 vcc 12 0 dc 5.0
 rc1 12 3 2.5k
 rb1 1 2 8k
 q1 3 2 0 qmod area = 100p
 .option acct bypass=1
 .tran 0.5n 5n
 .print tran v(2) v(3)
 .model qmod nbjt level=1
 + x.mesh node=1  loc=0.0
 + x.mesh node=61 loc=3.0
 + region num=1 material=1
 + material num=1 silicon nbgnn=1e17 nbgnp=1e17
 + mobility material=1 concmod=sg fieldmod=sg
 + mobility material=1 elec major
 + mobility material=1 elec minor
 + mobility material=1 hole major
 + mobility material=1 hole minor
 + doping unif n.type conc=1e17 x.l=0.0 x.h=1.0
 + doping unif p.type conc=1e16 x.l=0.0 x.h=1.5
 + doping unif n.type conc=1e15 x.l=0.0 x.h=3.0
 + models bgnw srh conctau auger concmob fieldmob
 + options base.length=1.0 base.depth=1.25
 .end
--- a/examples/cider/bjt/vco.cir
+++ b/examples/cider/bjt/vco.cir
@ -0,0 +1,45 @@
 Voltage controlled oscillator
 rc1 7 5 1k
 rc2 7 6 1k
 q5 7 7 5 qmod area = 100p
 q6 7 7 6 qmod area = 100p
 q3 7 5 2 qmod area = 100p
 q4 7 6 1 qmod area = 100p
 ib1 2 0 .5ma
 ib2 1 0 .5ma
 cb1 2 0 1pf
 cb2 1 0 1pf
 q1 5 1 3 qmod area = 100p
 q2 6 2 4 qmod area = 100p
 c1 3 4 .1uf 
 is1 3 0 dc 2.5ma pulse 2.5ma 0.5ma 0 1us 1us 50ms
 is2 4 0 1ma
 vcc 7 0 10
 .model qmod nbjt level=1
 + x.mesh node=1  loc=0.0
 + x.mesh node=61 loc=3.0
 + region num=1 material=1
 + material num=1 silicon nbgnn=1e17 nbgnp=1e17
 + mobility material=1 concmod=sg fieldmod=sg
 + mobility material=1 elec major
 + mobility material=1 elec minor
 + mobility material=1 hole major
 + mobility material=1 hole minor
 + doping unif n.type conc=1e17 x.l=0.0 x.h=1.0
 + doping unif p.type conc=1e16 x.l=0.0 x.h=1.5
 + doping unif n.type conc=1e15 x.l=0.0 x.h=3.0
 + models bgnw srh conctau auger concmob fieldmob
 + options base.length=1.0 base.depth=1.25
 .option acct bypass=1 
 .tran 3us 600us 0 3us
 .print tran v(4)
 .end
--- a/examples/cider/diode/diode.cir
+++ b/examples/cider/diode/diode.cir
@ -0,0 +1,35 @@
 One-Dimensional Diode Simulation
 * Several simulations are performed by this file.
 * They are:
 *   1. An operating point at 0.7v forward bias.
 *   2. An ac analysis at 0.7v forward bias.
 *   3. The forward and reverse bias characteristics from -3v to 2v.
 Vpp 1 0 0.7v (PWL 0ns 3.0v 0.01ns -6.0v) (AC 1v)
 Vnn 2 0 0v
 D1  1 2 M_PN AREA=100
 .model M_PN numd level=1
 + ***************************************
 + *** One-Dimensional Numerical Diode ***
 + ***************************************
 + options defa=1p
 + x.mesh loc=0.0 n=1
 + x.mesh loc=1.3 n=201
 + domain   num=1 material=1
 + material num=1 silicon
 + mobility mat=1 concmod=ct fieldmod=ct
 + doping gauss p.type conc=1e20 x.l=0.0  x.h=0.0 char.l=0.100
 + doping unif  n.type conc=1e16 x.l=0.0  x.h=1.3
 + doping gauss n.type conc=5e19 x.l=1.3  x.h=1.3 char.l=0.100 
 + models bgn aval srh auger conctau concmob fieldmob
 + method ac=direct
 .option acct bypass=0 abstol=1e-18 itl2=100
 .op
 .ac dec 10 100kHz 10gHz
 .dc Vpp -3.0v 2.0001v 50mv
 .print i(Vpp)
 .END
--- a/examples/cider/diode/diotran.cir
+++ b/examples/cider/diode/diotran.cir
@ -0,0 +1,31 @@
 Diode Reverse Recovery
 * This file simulates reverse recovery of a diode as it switched from an
 * on to off state.
 Vpp 1 0 0.7v (PWL 0ns 3.0v 0.1ns 3.0v 0.11ns -6.0v) (AC 1v)
 Vnn 2 0 0v
 R1  1 3 1k
 D1  3 2 M_PN area=100
 .MODEL M_PN numd level=1
 + ***************************************
 + *** One-Dimensional Numerical Diode ***
 + ***************************************
 + options defa=1p
 + x.mesh loc=0.0 n=1
 + x.mesh loc=1.3 n=201
 + domain   num=1 material=1
 + material num=1 silicon
 + mobility mat=1 concmod=ct fieldmod=ct
 + doping gauss p.type conc=3e20 x.l=0.0  x.h=0.0 char.l=0.100
 + doping unif  n.type conc=1e16 x.l=0.0  x.h=1.3
 + doping gauss n.type conc=5e19 x.l=1.3  x.h=1.3 char.l=0.100 
 + models bgn aval srh auger conctau concmob fieldmob
 + method ac=direct
 .option acct bypass=1 abstol=1e-15 itl2=100
 .tran 0.001ns 1.0ns
 .print i(Vpp)
 .END
--- a/examples/cider/diode/pindiode.cir
+++ b/examples/cider/diode/pindiode.cir
@ -0,0 +1,42 @@
 TWO-DIMENSIONAL PIN-DIODE CIRCUIT
 VIN 1 0 0.0v (PWL 0ns 0.8v 1ns -50.0v)
 L1  1 2 0.5uH
 VD  2 3 0.0v
 D1  3 0 M_PIN AREA=200 IC.FILE="OP.0.d1"
 VRC 2 4 0.0v
 R1  4 5 100
 C1  5 0 1.0nF
 .MODEL M_PIN NUMD LEVEL=2
 + options defw=1000u
 + x.mesh n=1 l=0.0
 + x.mesh n=2 l=0.2
 + x.mesh n=4 l=0.4
 + x.mesh n=8 l=0.6
 + x.mesh n=13 l=1.0
 +
 + y.mesh n=1 l=0.0
 + y.mesh n=9 l=4.0
 + y.mesh n=24 l=10.0
 + y.mesh n=29 l=15.0
 + y.mesh n=34 l=20.0
 +
 + domain num=1 material=1
 + material num=1 silicon tn=20ns tp=20ns
 +
 + electrode num=1 x.l=0.6 x.h=1.0 y.h=0.0
 + electrode num=2 y.l=20.0
 +
 + doping gauss p.type conc=1.0e20 char.len=1.076 x.l=0.75 x.h=1.1 y.h=0.0
 + + lat.rotate ratio=0.1
 + doping unif  n.type conc=1.0e14
 + doping gauss n.type conc=1.0e20 char.len=1.614 x.l=-0.1 x.h=1.1 y.l=20.0
 +
 + models bgn srh auger conctau concmob fieldmob
 .OPTION ACCT BYPASS=1
 .TRAN 1NS 100NS
 .PRINT TRAN v(3) I(VIN)
 .END
--- a/examples/cider/jfet/jfet.cir
+++ b/examples/cider/jfet/jfet.cir
@ -0,0 +1,36 @@
 Two-dimensional Junction Field-Effect Transistor (JFET)
 VDD 1 0  0.5V
 VGG 2 0 -1.0v AC 1V
 VSS 3 0  0.0V
 QJ1 1 2 3 M_NJF AREA=1
 .MODEL M_NJF NBJT LEVEL=2
 + options jfet defw=10.0um
 + output dc.debug phin phip equ.psi vac.psi
 + x.mesh w=0.2 h.e=0.001 r=1.8
 + x.mesh w=0.8 h.s=0.001 h.m=0.1 r=2.0
 + x.mesh w=0.8 h.e=0.001 h.m=0.1 r=2.0
 + x.mesh w=0.2 h.s=0.001 r=1.8
 + y.mesh w=0.2 h.e=0.01  r=1.8
 + y.mesh w=0.8 h.s=0.01  h.m=0.1  r=1.8
 +
 + domain num=1 mat=1 
 + material num=1 silicon
 + 
 + elec num=1 x.l=0.0 x.h=0.0 y.l=0.0 y.h=1.0
 + elec num=2 x.l=0.5 x.h=1.5 y.l=0.0 y.h=0.0
 + elec num=3 x.l=2.0 x.h=2.0 y.l=0.0 y.h=1.0
 +
 + doping unif n.type conc=3.0e15
 + doping unif p.type conc=2.0e17 x.l=0.2 x.h=1.8 y.h=0.2
 +
 + models bgn srh auger conctau concmob fieldmob ^aval
 .option acct bypass=1 temp=27
 *.op
 .dc vgg 0.0 -2.0001 -0.1
 *.ac dec 10 1k 100g
 .print i(vnn)
 .end
--- a/examples/cider/mos/bootinv.cir
+++ b/examples/cider/mos/bootinv.cir
@ -0,0 +1,59 @@
 NMOS Enhancement-Load Bootstrap Inverter
 Vdd 1 0 5.0v
 Vss 2 0 0.0v
 Vin 5 0 0.0v PWL (0.0ns 5.0v) (1ns 0.0v) (10ns 0.0v) (11ns 5.0v)
 + (20ns 5.0v) (21ns 0.0v) (30ns 0.0v) (31ns 5.0v)
 M1  1 1 3 2 M_NMOS w=5u
 M2  1 3 4 4 M_NMOS w=5u
 M3  4 5 2 2 M_NMOS w=5u
 CL  4 0 0.1pf
 CB  3 4 0.1pf
 .model M_NMOS numos
 + x.mesh l=0.0 n=1
 + x.mesh l=0.6 n=4
 + x.mesh l=0.7 n=5
 + x.mesh l=1.0 n=7
 + x.mesh l=1.2 n=11
 + x.mesh l=3.2 n=21
 + x.mesh l=3.4 n=25
 + x.mesh l=3.7 n=27
 + x.mesh l=3.8 n=28
 + x.mesh l=4.4 n=31
 +
 + y.mesh l=-.05 n=1
 + y.mesh l=0.0  n=5
 + y.mesh l=.05  n=9
 + y.mesh l=0.3  n=14
 + y.mesh l=2.0  n=19
 +
 + region num=1 material=1 y.l=0.0
 + material num=1 silicon
 + mobility material=1 concmod=sg fieldmod=sg
 + mobility material=1 init elec major
 + mobility material=1 init elec minor
 + mobility material=1 init hole major
 + mobility material=1 init hole minor
 +
 + region num=2 material=2 y.h=0.0 x.l=0.7 x.h=3.7
 + material num=2 oxide
 +
 + elec num=1 x.l=3.8 x.h=4.4	y.l=0.0 y.h=0.0
 + elec num=2 x.l=0.7 x.h=3.7	iy.l=1  iy.h=1
 + elec num=3 x.l=0.0 x.h=0.6	y.l=0.0 y.h=0.0
 + elec num=4 x.l=0.0 x.h=4.4	y.l=2.0 y.h=2.0
 +
 + doping unif p.type conc=2.5e16 x.l=0.0 x.h=4.4  y.l=0.0 y.h=2.0
 + doping unif p.type conc=1e16   x.l=0.0 x.h=4.4  y.l=0.0 y.h=0.05
 + doping unif n.type conc=1e20   x.l=0.0 x.h=1.1  y.l=0.0 y.h=0.2
 + doping unif n.type conc=1e20   x.l=3.3 x.h=4.4  y.l=0.0 y.h=0.2
 +
 + models concmob fieldmob
 + method ac=direct onec
 .tran 0.2ns 40ns
 .print v(4)
 .options acct bypass=1 method=gear
 .end
--- a/examples/cider/mos/charge.cir
+++ b/examples/cider/mos/charge.cir
@ -0,0 +1,57 @@
 MOS charge pump
 vin 4 0 dc 0v pulse 0 5 15ns 5ns 5ns 50ns 100ns
 vdd 5 6 dc 0v pulse 0 5 25ns 5ns 5ns 50ns 100ns
 vbb 0 7 dc 0v pulse 0 5  0ns 5ns 5ns 50ns 100ns
 rd 6 2 10k
 m1 5 4 3 7 mmod w=100um
 vs 3 2 0
 vc 2 1 0
 c2 1 0 10pf
 .ic v(3)=1.0
 .tran 2ns 200ns
 .options acct bypass=1
 .print tran v(1) v(2)
 .model mmod numos
 + x.mesh n=1 l=0
 + x.mesh n=3 l=0.4
 + x.mesh n=7 l=0.6
 + x.mesh n=15 l=1.4
 + x.mesh n=19 l=1.6
 + x.mesh n=21 l=2.0
 +
 + y.mesh n=1 l=0
 + y.mesh n=4 l=0.015
 + y.mesh n=8 l=0.05
 + y.mesh n=12 l=0.25
 + y.mesh n=14 l=0.35
 + y.mesh n=17 l=0.5
 + y.mesh n=21 l=1.0
 +
 + region num=1 material=1 y.l=0.015
 + material num=1 silicon
 + mobility material=1 concmod=sg fieldmod=sg
 + mobility material=1 elec major
 + mobility material=1 elec minor
 + mobility material=1 hole major
 + mobility material=1 hole minor
 +
 + region num=2 material=2 y.h=0.015 x.l=0.5 x.h=1.5
 + material num=2 oxide
 +
 + elec num=1 ix.l=18 ix.h=21   iy.l=4  iy.h=4
 + elec num=2 ix.l=5  ix.h=17   iy.l=1  iy.h=1
 + elec num=3 ix.l=1  ix.h=4    iy.l=4  iy.h=4
 + elec num=4 ix.l=1  ix.h=21   iy.l=21 iy.h=21
 +
 + doping unif n.type conc=1e18   x.l=0.0 x.h=0.5 y.l=0.015 y.h=0.25
 + doping unif n.type conc=1e18   x.l=1.5 x.h=2.0 y.l=0.015 y.h=0.25
 + doping unif p.type conc=1e15   x.l=0.0 x.h=2.0 y.l=0.015 y.h=1.0
 + doping unif p.type conc=1.3e17 x.l=0.5 x.h=1.5 y.l=0.015 y.h=0.05
 +
 + models concmob fieldmob
 + method onec
 .end
--- a/examples/cider/mos/cmosinv.cir
+++ b/examples/cider/mos/cmosinv.cir
@ -0,0 +1,115 @@
 CMOS Inverter
 Vdd 1 0 5.0v
 Vss 2 0 0.0v
 X1 1 2 3 4 INV
 Vin 3 0 2.5v
 .SUBCKT INV 1   2   3   4
 *           Vdd Vss Vin Vout
 M1  14 13 15 16 M_PMOS w=6.0u
 M2  24 23 25 26 M_NMOS w=3.0u
 Vgp 3 13 0.0v
 Vdp 4 14 0.0v
 Vsp 1 15 0.0v
 Vbp 1 16 0.0v
 Vgn 3 23 0.0v
 Vdn 4 24 0.0v
 Vsn 2 25 0.0v
 Vbn 2 26 0.0v
 .ENDS INV
 .model M_NMOS numos
 + x.mesh l=0.0 n=1
 + x.mesh l=0.6 n=4
 + x.mesh l=0.7 n=5
 + x.mesh l=1.0 n=7
 + x.mesh l=1.2 n=11
 + x.mesh l=3.2 n=21
 + x.mesh l=3.4 n=25
 + x.mesh l=3.7 n=27
 + x.mesh l=3.8 n=28
 + x.mesh l=4.4 n=31
 +
 + y.mesh l=-.05 n=1
 + y.mesh l=0.0  n=5
 + y.mesh l=.05  n=9
 + y.mesh l=0.3  n=14
 + y.mesh l=2.0  n=19
 +
 + region num=1 material=1 y.l=0.0
 + material num=1 silicon
 + mobility material=1 concmod=sg fieldmod=sg
 + mobility material=1 elec major
 + mobility material=1 elec minor
 + mobility material=1 hole major
 + mobility material=1 hole minor
 +
 + region num=2 material=2 y.h=0.0 x.l=0.7 x.h=3.7
 + material num=2 oxide
 +
 + elec num=1 x.l=3.8 x.h=4.4	y.l=0.0 y.h=0.0
 + elec num=2 x.l=0.7 x.h=3.7	iy.l=1  iy.h=1
 + elec num=3 x.l=0.0 x.h=0.6	y.l=0.0 y.h=0.0
 + elec num=4 x.l=0.0 x.h=4.4	y.l=2.0 y.h=2.0
 +
 + doping unif p.type conc=2.5e16 x.l=0.0 x.h=4.4  y.l=0.0 y.h=2.0
 + doping unif p.type conc=1e16   x.l=0.0 x.h=4.4  y.l=0.0 y.h=0.05
 + doping unif n.type conc=1e20   x.l=0.0 x.h=1.1  y.l=0.0 y.h=0.2
 + doping unif n.type conc=1e20   x.l=3.3 x.h=4.4  y.l=0.0 y.h=0.2
 +
 + models concmob fieldmob bgn srh conctau
 + method ac=direct onec
 .model M_PMOS numos
 + x.mesh l=0.0 n=1
 + x.mesh l=0.6 n=4
 + x.mesh l=0.7 n=5
 + x.mesh l=1.0 n=7
 + x.mesh l=1.2 n=11
 + x.mesh l=3.2 n=21
 + x.mesh l=3.4 n=25
 + x.mesh l=3.7 n=27
 + x.mesh l=3.8 n=28
 + x.mesh l=4.4 n=31
 +
 + y.mesh l=-.05 n=1
 + y.mesh l=0.0  n=5
 + y.mesh l=.05  n=9
 + y.mesh l=0.3  n=14
 + y.mesh l=2.0  n=19
 +
 + region num=1 material=1 y.l=0.0
 + material num=1 silicon
 + mobility material=1 concmod=sg fieldmod=sg
 + mobility material=1 elec major
 + mobility material=1 elec minor
 + mobility material=1 hole major
 + mobility material=1 hole minor
 +
 + region num=2 material=2 y.h=0.0 x.l=0.7 x.h=3.7
 + material num=2 oxide
 +
 + elec num=1 x.l=3.8 x.h=4.4	y.l=0.0 y.h=0.0
 + elec num=2 x.l=0.7 x.h=3.7	iy.l=1  iy.h=1
 + elec num=3 x.l=0.0 x.h=0.6	y.l=0.0 y.h=0.0
 + elec num=4 x.l=0.0 x.h=4.4	y.l=2.0 y.h=2.0
 +
 + doping unif n.type conc=1e16   x.l=0.0 x.h=4.4  y.l=0.0 y.h=2.0
 + doping unif p.type conc=3e16   x.l=0.0 x.h=4.4  y.l=0.0 y.h=0.05
 + doping unif p.type conc=1e20   x.l=0.0 x.h=1.1  y.l=0.0 y.h=0.2
 + doping unif p.type conc=1e20   x.l=3.3 x.h=4.4  y.l=0.0 y.h=0.2
 +
 + models concmob fieldmob bgn srh conctau
 + method ac=direct onec
 *.tran 0.1ns 5ns
 *.op
 .dc Vin 0.0v 5.001v 0.05v
 .print v(4)
 .options acct bypass=1 method=gear
 .end
--- a/examples/cider/mos/nmosinv.cir
+++ b/examples/cider/mos/nmosinv.cir
@ -0,0 +1,55 @@
 Resistive load NMOS inverter
 vin 1 0 pwl 0 0.0 2ns 5
 vdd 3 0 dc 5.0
 rd 3 2 2.5k
 m1 2 1 4 5 mmod w=10um
 cl 2 0 2pf
 vb 5 0 0
 vs 4 0 0
 .model mmod numos
 + x.mesh l=0.0 n=1
 + x.mesh l=0.6 n=4
 + x.mesh l=0.7 n=5
 + x.mesh l=1.0 n=7
 + x.mesh l=1.2 n=11
 + x.mesh l=3.2 n=21
 + x.mesh l=3.4 n=25
 + x.mesh l=3.7 n=27
 + x.mesh l=3.8 n=28
 + x.mesh l=4.4 n=31
 +
 + y.mesh l=-.05 n=1
 + y.mesh l=0.0  n=5
 + y.mesh l=.05  n=9
 + y.mesh l=0.3  n=14
 + y.mesh l=2.0  n=19
 +
 + region num=1 material=1 y.l=0.0
 + material num=1 silicon
 + mobility material=1 concmod=sg fieldmod=sg
 + mobility material=1 elec major
 + mobility material=1 elec minor
 + mobility material=1 hole major
 + mobility material=1 hole minor
 +
 + region num=2 material=2 y.h=0.0 x.l=0.7 x.h=3.7
 + material num=2 oxide
 +
 + elec num=1 x.l=3.8 x.h=4.4	y.l=0.0 y.h=0.0
 + elec num=2 x.l=0.7 x.h=3.7	iy.l=1  iy.h=1
 + elec num=3 x.l=0.0 x.h=0.6	y.l=0.0 y.h=0.0
 + elec num=4 x.l=0.0 x.h=4.4	y.l=2.0 y.h=2.0
 +
 + doping unif p.type conc=2.5e16 x.l=0.0 x.h=4.4  y.l=0.0 y.h=2.0
 + doping unif p.type conc=1e16   x.l=0.0 x.h=4.4  y.l=0.0 y.h=0.05
 + doping unif n.type conc=1e20   x.l=0.0 x.h=1.1  y.l=0.0 y.h=0.2
 + doping unif n.type conc=1e20   x.l=3.3 x.h=4.4  y.l=0.0 y.h=0.2
 +
 + models concmob fieldmob
 + method ac=direct onec
 .tran 0.2ns 30ns
 .options acct bypass=1
 .print tran v(1) v(2)
 .end
--- a/examples/cider/mos/pass.cir
+++ b/examples/cider/mos/pass.cir
@ -0,0 +1,59 @@
 Turnoff transient of pass transistor
 M1 11 2 3 4 mmod w=20um
 Cs 1 0 6.0pF
 Cl 3 0 6.0pF
 R1 3 6 200k
 Vin 6 0 dc 0
 Vdrn 1 11 dc 0
 Vg 2 0 dc 5 pwl 0 5 0.1n 0 1 0
 Vb 4 0 dc 0.0
 .tran 0.05ns 0.2ns 0.0ns 0.05ns
 .print tran v(1) i(Vdrn)
 .ic v(1)=0 v(3)=0
 .option acct bypass=1
 .model mmod numos
 + x.mesh l=0.0 n=1
 + x.mesh l=0.6 n=4
 + x.mesh l=0.7 n=5
 + x.mesh l=1.0 n=7
 + x.mesh l=1.2 n=11
 + x.mesh l=3.2 n=21
 + x.mesh l=3.4 n=25
 + x.mesh l=3.7 n=27
 + x.mesh l=3.8 n=28
 + x.mesh l=4.4 n=31
 +
 + y.mesh l=-.05 n=1
 + y.mesh l=0.0  n=5
 + y.mesh l=.05  n=9
 + y.mesh l=0.3  n=14
 + y.mesh l=2.0  n=19
 +
 + region num=1 material=1 y.l=0.0
 + material num=1 silicon
 + mobility material=1 concmod=sg fieldmod=sg
 + mobility material=1 elec major
 + mobility material=1 elec minor
 + mobility material=1 hole major
 + mobility material=1 hole minor
 +
 + region num=2 material=2 y.h=0.0 x.l=0.7 x.h=3.7
 + material num=2 oxide
 +
 + elec num=1 x.l=3.8 x.h=4.4	y.l=0.0 y.h=0.0
 + elec num=2 x.l=0.7 x.h=3.7	iy.l=1  iy.h=1
 + elec num=3 x.l=0.0 x.h=0.6	y.l=0.0 y.h=0.0
 + elec num=4 x.l=0.0 x.h=4.4	y.l=2.0 y.h=2.0
 +
 + doping unif p.type conc=2.5e16 x.l=0.0 x.h=4.4  y.l=0.0 y.h=2.0
 + doping unif p.type conc=1e16   x.l=0.0 x.h=4.4  y.l=0.0 y.h=0.05
 + doping unif n.type conc=1e20   x.l=0.0 x.h=1.1  y.l=0.0 y.h=0.2
 + doping unif n.type conc=1e20   x.l=3.3 x.h=4.4  y.l=0.0 y.h=0.2
 +
 + models concmob fieldmob
 + method ac=direct onec
 .end
--- a/examples/cider/mos/ringosc.cir
+++ b/examples/cider/mos/ringosc.cir
@ -0,0 +1,122 @@
 CMOS Ring Oscillator
 Vdd 1 0 5.0v
 Vss 2 0 0.0v
 X1 1 2 3 4 INV
 X2 1 2 4 5 INV
 X3 1 2 5 3 INV
 *X4 1 2 6 7 INV
 *X5 1 2 7 8 INV
 *X6 1 2 8 9 INV
 *X7 1 2 9 3 INV
 .IC V(3)=0.0v V(4)=2.5v V(5)=5.0v
 * V(6)=0.0v V(7)=5.0v V(8)=0.0v V(9)=5.0v
 Vin 3 0 2.5v
 .SUBCKT INV 1   2   3   4
 *           Vdd Vss Vin Vout
 M1  14 13 15 16 M_PMOS w=6.0u
 M2  24 23 25 26 M_NMOS w=3.0u
 Vgp 3 13 0.0v
 Vdp 4 14 0.0v
 Vsp 1 15 0.0v
 Vbp 1 16 0.0v
 Vgn 3 23 0.0v
 Vdn 4 24 0.0v
 Vsn 2 25 0.0v
 Vbn 2 26 0.0v
 .ENDS INV
 .model M_NMOS numos
 + x.mesh l=0.0 n=1
 + x.mesh l=0.6 n=4
 + x.mesh l=0.7 n=5
 + x.mesh l=1.0 n=7
 + x.mesh l=1.2 n=11
 + x.mesh l=3.2 n=21
 + x.mesh l=3.4 n=25
 + x.mesh l=3.7 n=27
 + x.mesh l=3.8 n=28
 + x.mesh l=4.4 n=31
 +
 + y.mesh l=-.05 n=1
 + y.mesh l=0.0  n=5
 + y.mesh l=.05  n=9
 + y.mesh l=0.3  n=14
 + y.mesh l=2.0  n=19
 +
 + region num=1 material=1 y.l=0.0
 + material num=1 silicon
 + mobility material=1 concmod=sg fieldmod=sg
 + mobility material=1 elec major
 + mobility material=1 elec minor
 + mobility material=1 hole major
 + mobility material=1 hole minor
 +
 + region num=2 material=2 y.h=0.0 x.l=0.7 x.h=3.7
 + material num=2 oxide
 +
 + elec num=1 x.l=3.8 x.h=4.4	y.l=0.0 y.h=0.0
 + elec num=2 x.l=0.7 x.h=3.7	iy.l=1  iy.h=1
 + elec num=3 x.l=0.0 x.h=0.6	y.l=0.0 y.h=0.0
 + elec num=4 x.l=0.0 x.h=4.4	y.l=2.0 y.h=2.0
 +
 + doping unif p.type conc=2.5e16 x.l=0.0 x.h=4.4  y.l=0.0 y.h=2.0
 + doping unif p.type conc=1e16   x.l=0.0 x.h=4.4  y.l=0.0 y.h=0.05
 + doping unif n.type conc=1e20   x.l=0.0 x.h=1.1  y.l=0.0 y.h=0.2
 + doping unif n.type conc=1e20   x.l=3.3 x.h=4.4  y.l=0.0 y.h=0.2
 +
 + models concmob fieldmob bgn srh conctau
 + method ac=direct onec
 .model M_PMOS numos
 + x.mesh l=0.0 n=1
 + x.mesh l=0.6 n=4
 + x.mesh l=0.7 n=5
 + x.mesh l=1.0 n=7
 + x.mesh l=1.2 n=11
 + x.mesh l=3.2 n=21
 + x.mesh l=3.4 n=25
 + x.mesh l=3.7 n=27
 + x.mesh l=3.8 n=28
 + x.mesh l=4.4 n=31
 +
 + y.mesh l=-.05 n=1
 + y.mesh l=0.0  n=5
 + y.mesh l=.05  n=9
 + y.mesh l=0.3  n=14
 + y.mesh l=2.0  n=19
 +
 + region num=1 material=1 y.l=0.0
 + material num=1 silicon
 + mobility material=1 concmod=sg fieldmod=sg
 + mobility material=1 elec major
 + mobility material=1 elec minor
 + mobility material=1 hole major
 + mobility material=1 hole minor
 +
 + region num=2 material=2 y.h=0.0 x.l=0.7 x.h=3.7
 + material num=2 oxide
 +
 + elec num=1 x.l=3.8 x.h=4.4	y.l=0.0 y.h=0.0
 + elec num=2 x.l=0.7 x.h=3.7	iy.l=1  iy.h=1
 + elec num=3 x.l=0.0 x.h=0.6	y.l=0.0 y.h=0.0
 + elec num=4 x.l=0.0 x.h=4.4	y.l=2.0 y.h=2.0
 +
 + doping unif n.type conc=1e16   x.l=0.0 x.h=4.4  y.l=0.0 y.h=2.0
 + doping unif p.type conc=3e16   x.l=0.0 x.h=4.4  y.l=0.0 y.h=0.05
 + doping unif p.type conc=1e20   x.l=0.0 x.h=1.1  y.l=0.0 y.h=0.2
 + doping unif p.type conc=1e20   x.l=3.3 x.h=4.4  y.l=0.0 y.h=0.2
 +
 + models concmob fieldmob bgn srh conctau
 + method ac=direct onec
 .tran 0.1ns 5ns
 .print v(4)
 .options acct bypass=1 method=gear
 .end
--- a/examples/cider/parallel/BICMOS.LIB
+++ b/examples/cider/parallel/BICMOS.LIB
@ -0,0 +1,931 @@
 **
 * BICMOS.LIB: Library of models used in the 1.0 um CBiCMOS process
 *    Contains CIDER input descriptions as well as matching
 *    SPICE models for some of the CIDER models.
 **
 **
 * One-dimensional models for a
 * polysilicon emitter complementary bipolar process.
 * The default device size is 1um by 1um (LxW)
 **
 .model M_NPN1D nbjt level=1
 + title One-Dimensional Numerical Bipolar
 + options base.depth=0.15 base.area=0.1 base.length=0.5 defa=1p
 + x.mesh loc=-0.2 n=1
 + x.mesh loc=0.0  n=51
 + x.mesh wid=0.15 h.e=0.0001 h.m=.004 r=1.2
 + x.mesh wid=1.15 h.s=0.0001 h.m=.004 r=1.2
 + domain   num=1 material=1 x.l=0.0
 + domain   num=2 material=2 x.h=0.0
 + material num=1 silicon
 + mobility mat=1 concmod=ct fieldmod=ct
 + material num=2 polysilicon
 + mobility mat=2 concmod=ct fieldmod=ct
 + doping gauss n.type conc=3e20  x.l=-0.2 x.h=0.0 char.len=0.047
 + doping gauss p.type conc=5e18  x.l=-0.2 x.h=0.0 char.len=0.100
 + doping unif  n.type conc=1e16  x.l=0.0 x.h=1.3
 + doping gauss n.type conc=5e19  x.l=1.3 x.h=1.3 char.len=0.100
 + models bgn srh auger conctau concmob fieldmob 
 + method devtol=1e-12 ac=direct itlim=15
 .model M_PNP1D nbjt level=1
 + title One-Dimensional Numerical Bipolar
 + options base.depth=0.2 base.area=0.1 base.length=0.5 defa=1p
 + x.mesh loc=-0.2 n=1
 + x.mesh loc=0.0  n=51
 + x.mesh wid=0.20 h.e=0.0001 h.m=.004 r=1.2
 + x.mesh wid=1.10 h.s=0.0001 h.m=.004 r=1.2
 + domain   num=1 material=1 x.l=0.0
 + domain   num=2 material=2 x.h=0.0
 + material num=1 silicon
 + mobility mat=1 concmod=ct fieldmod=ct
 + material num=2 polysilicon
 + mobility mat=2 concmod=ct fieldmod=ct
 + doping gauss p.type conc=3e20  x.l=-0.2 x.h=0.0 char.len=0.047
 + doping gauss n.type conc=5e17  x.l=-0.2 x.h=0.0 char.len=0.200
 + doping unif  p.type conc=1e16  x.l=0.0 x.h=1.3
 + doping gauss p.type conc=5e19  x.l=1.3 x.h=1.3 char.len=0.100
 + models bgn srh auger conctau concmob fieldmob 
 + method devtol=1e-12 ac=direct itlim=15
 **
 * Two-dimensional models for a
 * polysilicon emitter complementary bipolar process.
 * The default device size is 1um by 1um (LxW)
 **
 .MODEL M_NPNS nbjt level=2
 + title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR
 + * Since half the device is simulated, double the unit width to get
 + * 1.0 um emitter.  Use a small mesh for this model.
 + options defw=2.0u
 + output stat
 + 
 + x.mesh w=2.0 h.e=0.02 h.m=0.5 r=2.0
 + x.mesh w=0.5 h.s=0.02 h.m=0.2 r=2.0
 + 
 + y.mesh l=-0.2 n=1
 + y.mesh l= 0.0 n=5
 + y.mesh w=0.10 h.e=0.004 h.m=0.05  r=2.5
 + y.mesh w=0.15 h.s=0.004 h.m=0.02  r=2.5
 + y.mesh w=1.05 h.s=0.02  h.m=0.1   r=2.5
 +
 + domain num=1 material=1 x.l=2.0 y.h=0.0
 + domain num=2 material=2 x.h=2.0 y.h=0.0
 + domain num=3 material=3 y.l=0.0
 + material num=1 polysilicon
 + material num=2 oxide
 + material num=3 silicon
 +
 + elec num=1 x.l=0.0  x.h=0.0  y.l=1.1  y.h=1.3
 + elec num=2 x.l=0.0  x.h=0.5  y.l=0.0  y.h=0.0
 + elec num=3 x.l=2.0  x.h=3.0  y.l=-0.2 y.h=-0.2
 +
 + doping gauss n.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0
 + + char.l=0.047 lat.rotate
 + doping gauss p.type conc=5e18 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0
 + + char.l=0.100 lat.rotate
 + doping gauss p.type conc=1e20 x.l=0.0 x.h=0.5 y.l=-0.2 y.h=0.0
 + + char.l=0.100 lat.rotate ratio=0.7
 + doping unif  n.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3
 + doping gauss n.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3
 + + char.l=0.100 lat.rotate
 +
 + method ac=direct itlim=10
 + models bgn srh auger conctau concmob fieldmob
 .MODEL M_NPN nbjt level=2
 + title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR
 + * Since half the device is simulated, double the unit width to get
 + * 1.0 um emitter length. Uses a finer mesh in the X direction.
 + options defw=2.0u
 + output stat
 + 
 + x.mesh w=0.5  h.e=0.075 h.m=0.2 r=2.0
 + x.mesh w=0.75 h.s=0.075 h.m=0.2 r=2.0
 + x.mesh w=0.75 h.e=0.05 h.m=0.2 r=1.5
 + x.mesh w=0.5  h.s=0.05 h.m=0.1 r=1.5
 + 
 + y.mesh l=-0.2 n=1
 + y.mesh l= 0.0 n=5
 + y.mesh w=0.10 h.e=0.003 h.m=0.01  r=1.5
 + y.mesh w=0.15 h.s=0.003 h.m=0.02  r=1.5
 + y.mesh w=0.35 h.s=0.02  h.m=0.2   r=1.5
 + y.mesh w=0.40 h.e=0.05  h.m=0.2   r=1.5
 + y.mesh w=0.30 h.s=0.05  h.m=0.1   r=1.5
 +
 + domain num=1 material=1 x.l=2.0 y.h=0.0
 + domain num=2 material=2 x.h=2.0 y.h=0.0
 + domain num=3 material=3 y.l=0.0
 + material num=1 polysilicon
 + material num=2 oxide
 + material num=3 silicon
 +
 + elec num=1 x.l=0.0  x.h=0.0  y.l=1.1  y.h=1.3
 + elec num=2 x.l=0.0  x.h=0.5  y.l=0.0  y.h=0.0
 + elec num=3 x.l=2.0  x.h=3.0  y.l=-0.2 y.h=-0.2
 +
 + doping gauss n.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0
 + + char.l=0.047 lat.rotate
 + doping gauss p.type conc=5e18 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0
 + + char.l=0.100 lat.rotate
 + doping gauss p.type conc=1e20 x.l=0.0 x.h=0.5 y.l=-0.2 y.h=0.0
 + + char.l=0.100 lat.rotate ratio=0.7
 + doping unif  n.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3
 + doping gauss n.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3
 + + char.l=0.100 lat.rotate
 +
 + method ac=direct itlim=10
 + models bgn srh auger conctau concmob fieldmob
 .MODEL M_PNPS nbjt level=2
 + title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR
 + * Since half the device is simulated, double the unit width to get
 + * 1.0 um emitter length.  Use a small mesh for this model.
 + options defw=2.0u
 + output stat
 +
 + x.mesh w=2.0 h.e=0.02 h.m=0.5 r=2.0
 + x.mesh w=0.5 h.s=0.02 h.m=0.2 r=2.0
 + 
 + y.mesh l=-0.2 n=1
 + y.mesh l= 0.0 n=5
 + y.mesh w=0.12 h.e=0.004 h.m=0.05  r=2.5
 + y.mesh w=0.28 h.s=0.004 h.m=0.02  r=2.5
 + y.mesh w=1.05 h.s=0.02  h.m=0.1   r=2.5
 + 
 + domain num=1 material=1 x.l=2.0 y.h=0.0
 + domain num=2 material=2 x.h=2.0 y.h=0.0
 + domain num=3 material=3 y.l=0.0
 + material num=1 polysilicon
 + material num=2 oxide
 + material num=3 silicon
 +
 + elec num=1 x.l=0.0  x.h=0.0  y.l=1.1  y.h=1.3
 + elec num=2 x.l=0.0  x.h=0.5  y.l=0.0  y.h=0.0
 + elec num=3 x.l=2.0  x.h=3.0  y.l=-0.2 y.h=-0.2
 +
 + doping gauss p.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0
 + + char.l=0.047 lat.rotate
 + doping gauss n.type conc=5e17 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0
 + + char.l=0.200 lat.rotate
 + doping gauss n.type conc=1e20 x.l=0.0 x.h=0.5 y.l=-0.2 y.h=0.0
 + + char.l=0.100 lat.rotate ratio=0.7
 + doping unif  p.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3
 + doping gauss p.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3
 + + char.l=0.100 lat.rotate
 +
 + method ac=direct itlim=10
 + models bgn srh auger conctau concmob fieldmob
 .MODEL M_PNP nbjt level=2
 + title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR
 + * Since half the device is simulated, double the unit width to get
 + * 1.0 um emitter length. Uses a finer mesh in the X direction.
 + options defw=2.0u
 + output stat
 + 
 + x.mesh w=0.5  h.e=0.075 h.m=0.2 r=2.0
 + x.mesh w=0.75 h.s=0.075 h.m=0.2 r=2.0
 + x.mesh w=0.75 h.e=0.05 h.m=0.2 r=1.5
 + x.mesh w=0.5  h.s=0.05 h.m=0.1 r=1.5
 + 
 + y.mesh l=-0.2 n=1
 + y.mesh l= 0.0 n=5
 + y.mesh w=0.12 h.e=0.003 h.m=0.01  r=1.5
 + y.mesh w=0.28 h.s=0.003 h.m=0.02  r=1.5
 + y.mesh w=0.20 h.s=0.02  h.m=0.2   r=1.5
 + y.mesh w=0.40 h.e=0.05  h.m=0.2   r=1.5
 + y.mesh w=0.30 h.s=0.05  h.m=0.1   r=1.5
 +
 + domain num=1 material=1 x.l=2.0 y.h=0.0
 + domain num=2 material=2 x.h=2.0 y.h=0.0
 + domain num=3 material=3 y.l=0.0
 + material num=1 polysilicon
 + material num=2 oxide
 + material num=3 silicon
 +
 + elec num=1 x.l=0.0  x.h=0.0  y.l=1.1  y.h=1.3
 + elec num=2 x.l=0.0  x.h=0.5  y.l=0.0  y.h=0.0
 + elec num=3 x.l=2.0  x.h=3.0  y.l=-0.2 y.h=-0.2
 +
 + doping gauss p.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0
 + + char.l=0.047 lat.rotate
 + doping gauss n.type conc=5e17 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0
 + + char.l=0.200 lat.rotate
 + doping gauss n.type conc=1e20 x.l=0.0 x.h=0.5 y.l=-0.2 y.h=0.0
 + + char.l=0.100 lat.rotate ratio=0.7
 + doping unif  p.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3
 + doping gauss p.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3
 + + char.l=0.100 lat.rotate
 +
 + method ac=direct itlim=10
 + models bgn srh auger conctau concmob fieldmob
 **
 * Two-dimensional models for a
 * complementary MOS process.
 * Device models for 1um, 2um, 3um, 4um, 5um, 10um and 50um are provided.
 **
 .MODEL M_NMOS_1 numos
 + output stat
 + 
 + x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
 + x.mesh w=0.4 h.s=0.005 h.m=0.1 r=2.0
 + x.mesh w=0.4 h.e=0.005 h.m=0.1 r=2.0
 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
 + x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
 +
 + y.mesh l=-.0200 n=1
 + y.mesh l=0.0 n=6
 + y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
 + y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
 + y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
 +
 + region num=1 material=1 y.h=0.0
 + region num=2 material=2 y.l=0.0
 + interface dom=2 nei=1 x.l=1 x.h=2 layer.width=0.0
 + material num=1 oxide
 + material num=2 silicon
 +
 + elec num=1 x.l=2.5  x.h=3.1  y.l=0.0 y.h=0.0
 + elec num=2 x.l=1 x.h=2  iy.l=1  iy.h=1
 + elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
 + elec num=4 x.l=-0.1  x.h=3.1 y.l=2.0 y.h=2.0
 +
 + doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=3.1 y.l=0.0
 + + char.l=0.30
 + doping unif p.type conc=5.0e15 x.l=-0.1 x.h=3.1 y.l=0.0 y.h=2.1
 + doping gauss n.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
 + + char.l=0.16 lat.rotate ratio=0.65
 + doping gauss n.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
 + + char.l=0.03 lat.rotate ratio=0.65
 + doping gauss n.type conc=4e17  x.l=2 x.h=3.1 y.l=0.0 y.h=0.0
 + + char.l=0.16 lat.rotate ratio=0.65
 + doping gauss n.type conc=1e20  x.l=2.05 x.h=3.1 y.l=0.0 y.h=0.08
 + + char.l=0.03 lat.rotate ratio=0.65
 +
 + contact num=2 workf=4.10
 + models concmob surfmob transmob fieldmob srh auger conctau bgn 
 + method ac=direct itlim=10 onec
 .MODEL M_NMOS_2 numos
 + output stat
 + 
 + x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
 + x.mesh w=0.9 h.s=0.005 h.m=0.2 r=2.0
 + x.mesh w=0.9 h.e=0.005 h.m=0.2 r=2.0
 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
 + x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
 +
 + y.mesh l=-.0200 n=1
 + y.mesh l=0.0 n=6
 + y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
 + y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
 + y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
 +
 + region num=1 material=1 y.h=0.0
 + region num=2 material=2 y.l=0.0
 + interface dom=2 nei=1 x.l=1 x.h=3 layer.width=0.0
 + material num=1 oxide
 + material num=2 silicon
 +
 + elec num=1 x.l=3.5  x.h=4.1  y.l=0.0 y.h=0.0
 + elec num=2 x.l=1 x.h=3  iy.l=1  iy.h=1
 + elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
 + elec num=4 x.l=-0.1  x.h=4.1 y.l=2.0 y.h=2.0
 +
 + doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=4.1 y.l=0.0
 + + char.l=0.30
 + doping unif p.type conc=5.0e15 x.l=-0.1 x.h=4.1 y.l=0.0 y.h=2.1
 + doping gauss n.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
 + + char.l=0.16 lat.rotate ratio=0.65
 + doping gauss n.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
 + + char.l=0.03 lat.rotate ratio=0.65
 + doping gauss n.type conc=4e17  x.l=3 x.h=4.1 y.l=0.0 y.h=0.0
 + + char.l=0.16 lat.rotate ratio=0.65
 + doping gauss n.type conc=1e20  x.l=3.05 x.h=4.1 y.l=0.0 y.h=0.08
 + + char.l=0.03 lat.rotate ratio=0.65
 +
 + contact num=2 workf=4.10
 + models concmob surfmob transmob fieldmob srh auger conctau bgn 
 + method ac=direct itlim=10 onec
 .MODEL M_NMOS_3 numos
 + output stat
 + 
 + x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
 + x.mesh w=1.4 h.s=0.005 h.m=0.3 r=2.0
 + x.mesh w=1.4 h.e=0.005 h.m=0.3 r=2.0
 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
 + x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
 +
 + y.mesh l=-.0200 n=1
 + y.mesh l=0.0 n=6
 + y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
 + y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
 + y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
 +
 + region num=1 material=1 y.h=0.0
 + region num=2 material=2 y.l=0.0
 + interface dom=2 nei=1 x.l=1 x.h=4 layer.width=0.0
 + material num=1 oxide
 + material num=2 silicon
 +
 + elec num=1 x.l=4.5  x.h=5.1  y.l=0.0 y.h=0.0
 + elec num=2 x.l=1 x.h=4  iy.l=1  iy.h=1
 + elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
 + elec num=4 x.l=-0.1  x.h=5.1 y.l=2.0 y.h=2.0
 +
 + doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=5.1 y.l=0.0
 + + char.l=0.30
 + doping unif p.type conc=5.0e15 x.l=-0.1 x.h=5.1 y.l=0.0 y.h=2.1
 + doping gauss n.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
 + + char.l=0.16 lat.rotate ratio=0.65
 + doping gauss n.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
 + + char.l=0.03 lat.rotate ratio=0.65
 + doping gauss n.type conc=4e17  x.l=4 x.h=5.1 y.l=0.0 y.h=0.0
 + + char.l=0.16 lat.rotate ratio=0.65
 + doping gauss n.type conc=1e20  x.l=4.05 x.h=5.1 y.l=0.0 y.h=0.08
 + + char.l=0.03 lat.rotate ratio=0.65
 +
 + contact num=2 workf=4.10
 + models concmob surfmob transmob fieldmob srh auger conctau bgn 
 + method ac=direct itlim=10 onec
 .MODEL M_NMOS_4 numos
 + output stat
 + 
 + x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
 + x.mesh w=1.9 h.s=0.005 h.m=0.4 r=2.0
 + x.mesh w=1.9 h.e=0.005 h.m=0.4 r=2.0
 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
 + x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
 +
 + y.mesh l=-.0200 n=1
 + y.mesh l=0.0 n=6
 + y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
 + y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
 + y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
 +
 + region num=1 material=1 y.h=0.0
 + region num=2 material=2 y.l=0.0
 + interface dom=2 nei=1 x.l=1 x.h=5 layer.width=0.0
 + material num=1 oxide
 + material num=2 silicon
 +
 + elec num=1 x.l=5.5  x.h=6.1  y.l=0.0 y.h=0.0
 + elec num=2 x.l=1 x.h=5  iy.l=1  iy.h=1
 + elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
 + elec num=4 x.l=-0.1  x.h=6.1 y.l=2.0 y.h=2.0
 +
 + doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=6.1 y.l=0.0
 + + char.l=0.30
 + doping unif p.type conc=5.0e15 x.l=-0.1 x.h=6.1 y.l=0.0 y.h=2.1
 + doping gauss n.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
 + + char.l=0.16 lat.rotate ratio=0.65
 + doping gauss n.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
 + + char.l=0.03 lat.rotate ratio=0.65
 + doping gauss n.type conc=4e17  x.l=5 x.h=6.1 y.l=0.0 y.h=0.0
 + + char.l=0.16 lat.rotate ratio=0.65
 + doping gauss n.type conc=1e20  x.l=5.05 x.h=6.1 y.l=0.0 y.h=0.08
 + + char.l=0.03 lat.rotate ratio=0.65
 +
 + contact num=2 workf=4.10
 + models concmob surfmob transmob fieldmob srh auger conctau bgn 
 + method ac=direct itlim=10 onec
 .MODEL M_NMOS_5 numos
 + output stat
 + 
 + x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
 + x.mesh w=2.4 h.s=0.005 h.m=0.5 r=2.0
 + x.mesh w=2.4 h.e=0.005 h.m=0.5 r=2.0
 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
 + x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
 +
 + y.mesh l=-.0200 n=1
 + y.mesh l=0.0 n=6
 + y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
 + y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
 + y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
 +
 + region num=1 material=1 y.h=0.0
 + region num=2 material=2 y.l=0.0
 + interface dom=2 nei=1 x.l=1 x.h=6 layer.width=0.0
 + material num=1 oxide
 + material num=2 silicon
 +
 + elec num=1 x.l=6.5  x.h=7.1  y.l=0.0 y.h=0.0
 + elec num=2 x.l=1 x.h=6  iy.l=1  iy.h=1
 + elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
 + elec num=4 x.l=-0.1  x.h=7.1 y.l=2.0 y.h=2.0
 +
 + doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=7.1 y.l=0.0
 + + char.l=0.30
 + doping unif p.type conc=5.0e15 x.l=-0.1 x.h=7.1 y.l=0.0 y.h=2.1
 + doping gauss n.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
 + + char.l=0.16 lat.rotate ratio=0.65
 + doping gauss n.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
 + + char.l=0.03 lat.rotate ratio=0.65
 + doping gauss n.type conc=4e17  x.l=6 x.h=7.1 y.l=0.0 y.h=0.0
 + + char.l=0.16 lat.rotate ratio=0.65
 + doping gauss n.type conc=1e20  x.l=6.05 x.h=7.1 y.l=0.0 y.h=0.08
 + + char.l=0.03 lat.rotate ratio=0.65
 +
 + contact num=2 workf=4.10
 + models concmob surfmob transmob fieldmob srh auger conctau bgn 
 + method ac=direct itlim=10 onec
 .MODEL M_NMOS_10 numos
 + output stat
 + 
 + x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
 + x.mesh w=4.9 h.s=0.005 h.m=1 r=2.0
 + x.mesh w=4.9 h.e=0.005 h.m=1 r=2.0
 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
 + x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
 +
 + y.mesh l=-.0200 n=1
 + y.mesh l=0.0 n=6
 + y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
 + y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
 + y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
 +
 + region num=1 material=1 y.h=0.0
 + region num=2 material=2 y.l=0.0
 + interface dom=2 nei=1 x.l=1 x.h=11 layer.width=0.0
 + material num=1 oxide
 + material num=2 silicon
 +
 + elec num=1 x.l=11.5  x.h=12.1  y.l=0.0 y.h=0.0
 + elec num=2 x.l=1 x.h=11  iy.l=1  iy.h=1
 + elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
 + elec num=4 x.l=-0.1  x.h=12.1 y.l=2.0 y.h=2.0
 +
 + doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=12.1 y.l=0.0
 + + char.l=0.30
 + doping unif p.type conc=5.0e15 x.l=-0.1 x.h=12.1 y.l=0.0 y.h=2.1
 + doping gauss n.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
 + + char.l=0.16 lat.rotate ratio=0.65
 + doping gauss n.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
 + + char.l=0.03 lat.rotate ratio=0.65
 + doping gauss n.type conc=4e17  x.l=11 x.h=12.1 y.l=0.0 y.h=0.0
 + + char.l=0.16 lat.rotate ratio=0.65
 + doping gauss n.type conc=1e20  x.l=11.05 x.h=12.1 y.l=0.0 y.h=0.08
 + + char.l=0.03 lat.rotate ratio=0.65
 +
 + contact num=2 workf=4.10
 + models concmob surfmob transmob fieldmob srh auger conctau bgn 
 + method ac=direct itlim=10 onec
 .MODEL M_NMOS_50 numos
 + output stat
 + 
 + x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
 + x.mesh w=24.9 h.s=0.005 h.m=5 r=2.0
 + x.mesh w=24.9 h.e=0.005 h.m=5 r=2.0
 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
 + x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
 +
 + y.mesh l=-.0200 n=1
 + y.mesh l=0.0 n=6
 + y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
 + y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
 + y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
 +
 + region num=1 material=1 y.h=0.0
 + region num=2 material=2 y.l=0.0
 + interface dom=2 nei=1 x.l=1 x.h=51 layer.width=0.0
 + material num=1 oxide
 + material num=2 silicon
 +
 + elec num=1 x.l=51.5  x.h=52.1  y.l=0.0 y.h=0.0
 + elec num=2 x.l=1 x.h=51  iy.l=1  iy.h=1
 + elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
 + elec num=4 x.l=-0.1  x.h=52.1 y.l=2.0 y.h=2.0
 +
 + doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=52.1 y.l=0.0
 + + char.l=0.30
 + doping unif p.type conc=5.0e15 x.l=-0.1 x.h=52.1 y.l=0.0 y.h=2.1
 + doping gauss n.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
 + + char.l=0.16 lat.rotate ratio=0.65
 + doping gauss n.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
 + + char.l=0.03 lat.rotate ratio=0.65
 + doping gauss n.type conc=4e17  x.l=51 x.h=52.1 y.l=0.0 y.h=0.0
 + + char.l=0.16 lat.rotate ratio=0.65
 + doping gauss n.type conc=1e20  x.l=51.05 x.h=52.1 y.l=0.0 y.h=0.08
 + + char.l=0.03 lat.rotate ratio=0.65
 +
 + contact num=2 workf=4.10
 + models concmob surfmob transmob fieldmob srh auger conctau bgn 
 + method ac=direct itlim=10 onec
 .MODEL M_PMOS_1 numos
 + output stat
 + 
 + x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
 + x.mesh w=0.4 h.s=0.005 h.m=0.1 r=2.0
 + x.mesh w=0.4 h.e=0.005 h.m=0.1 r=2.0
 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
 + x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
 +
 + y.mesh l=-.0200 n=1
 + y.mesh l=0.0 n=6
 + y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
 + y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
 + y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
 +
 + region num=1 material=1 y.h=0.0
 + region num=2 material=2 y.l=0.0
 + interface dom=2 nei=1 x.l=1 x.h=2 layer.width=0.0
 + material num=1 oxide
 + material num=2 silicon
 +
 + elec num=1 x.l=2.5  x.h=3.1  y.l=0.0 y.h=0.0
 + elec num=2 x.l=1 x.h=2  iy.l=1  iy.h=1
 + elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
 + elec num=4 x.l=-0.1  x.h=3.1 y.l=2.0 y.h=2.0
 +
 + doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=3.1 y.l=0.0
 + + char.l=0.30
 + doping unif n.type conc=5.0e15 x.l=-0.1 x.h=3.1 y.l=0.0 y.h=2.1
 + doping gauss p.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
 + + char.l=0.16 lat.rotate ratio=0.65
 + doping gauss p.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
 + + char.l=0.03 lat.rotate ratio=0.65
 + doping gauss p.type conc=4e17  x.l=2 x.h=3.1 y.l=0.0 y.h=0.0
 + + char.l=0.16 lat.rotate ratio=0.65
 + doping gauss p.type conc=1e20  x.l=2.05 x.h=3.1 y.l=0.0 y.h=0.08
 + + char.l=0.03 lat.rotate ratio=0.65
 +
 + contact num=2 workf=5.29
 + models concmob surfmob transmob fieldmob srh auger conctau bgn 
 + method ac=direct itlim=10 onec
 .MODEL M_PMOS_2 numos
 + output stat
 + 
 + x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
 + x.mesh w=0.9 h.s=0.005 h.m=0.2 r=2.0
 + x.mesh w=0.9 h.e=0.005 h.m=0.2 r=2.0
 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
 + x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
 +
 + y.mesh l=-.0200 n=1
 + y.mesh l=0.0 n=6
 + y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
 + y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
 + y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
 +
 + region num=1 material=1 y.h=0.0
 + region num=2 material=2 y.l=0.0
 + interface dom=2 nei=1 x.l=1 x.h=3 layer.width=0.0
 + material num=1 oxide
 + material num=2 silicon
 +
 + elec num=1 x.l=3.5  x.h=4.1  y.l=0.0 y.h=0.0
 + elec num=2 x.l=1 x.h=3  iy.l=1  iy.h=1
 + elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
 + elec num=4 x.l=-0.1  x.h=4.1 y.l=2.0 y.h=2.0
 +
 + doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=4.1 y.l=0.0
 + + char.l=0.30
 + doping unif n.type conc=5.0e15 x.l=-0.1 x.h=4.1 y.l=0.0 y.h=2.1
 + doping gauss p.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
 + + char.l=0.16 lat.rotate ratio=0.65
 + doping gauss p.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
 + + char.l=0.03 lat.rotate ratio=0.65
 + doping gauss p.type conc=4e17  x.l=3 x.h=4.1 y.l=0.0 y.h=0.0
 + + char.l=0.16 lat.rotate ratio=0.65
 + doping gauss p.type conc=1e20  x.l=3.05 x.h=4.1 y.l=0.0 y.h=0.08
 + + char.l=0.03 lat.rotate ratio=0.65
 +
 + contact num=2 workf=5.29
 + models concmob surfmob transmob fieldmob srh auger conctau bgn 
 + method ac=direct itlim=10 onec
 .MODEL M_PMOS_3 numos
 + output stat
 + 
 + x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
 + x.mesh w=1.4 h.s=0.005 h.m=0.3 r=2.0
 + x.mesh w=1.4 h.e=0.005 h.m=0.3 r=2.0
 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
 + x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
 +
 + y.mesh l=-.0200 n=1
 + y.mesh l=0.0 n=6
 + y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
 + y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
 + y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
 +
 + region num=1 material=1 y.h=0.0
 + region num=2 material=2 y.l=0.0
 + interface dom=2 nei=1 x.l=1 x.h=4 layer.width=0.0
 + material num=1 oxide
 + material num=2 silicon
 +
 + elec num=1 x.l=4.5  x.h=5.1  y.l=0.0 y.h=0.0
 + elec num=2 x.l=1 x.h=4  iy.l=1  iy.h=1
 + elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
 + elec num=4 x.l=-0.1  x.h=5.1 y.l=2.0 y.h=2.0
 +
 + doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=5.1 y.l=0.0
 + + char.l=0.30
 + doping unif n.type conc=5.0e15 x.l=-0.1 x.h=5.1 y.l=0.0 y.h=2.1
 + doping gauss p.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
 + + char.l=0.16 lat.rotate ratio=0.65
 + doping gauss p.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
 + + char.l=0.03 lat.rotate ratio=0.65
 + doping gauss p.type conc=4e17  x.l=4 x.h=5.1 y.l=0.0 y.h=0.0
 + + char.l=0.16 lat.rotate ratio=0.65
 + doping gauss p.type conc=1e20  x.l=4.05 x.h=5.1 y.l=0.0 y.h=0.08
 + + char.l=0.03 lat.rotate ratio=0.65
 +
 + contact num=2 workf=5.29
 + models concmob surfmob transmob fieldmob srh auger conctau bgn 
 + method ac=direct itlim=10 onec
 .MODEL M_PMOS_4 numos
 + output stat
 + 
 + x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
 + x.mesh w=1.9 h.s=0.005 h.m=0.4 r=2.0
 + x.mesh w=1.9 h.e=0.005 h.m=0.4 r=2.0
 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
 + x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
 +
 + y.mesh l=-.0200 n=1
 + y.mesh l=0.0 n=6
 + y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
 + y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
 + y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
 +
 + region num=1 material=1 y.h=0.0
 + region num=2 material=2 y.l=0.0
 + interface dom=2 nei=1 x.l=1 x.h=5 layer.width=0.0
 + material num=1 oxide
 + material num=2 silicon
 +
 + elec num=1 x.l=5.5  x.h=6.1  y.l=0.0 y.h=0.0
 + elec num=2 x.l=1 x.h=5  iy.l=1  iy.h=1
 + elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
 + elec num=4 x.l=-0.1  x.h=6.1 y.l=2.0 y.h=2.0
 +
 + doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=6.1 y.l=0.0
 + + char.l=0.30
 + doping unif n.type conc=5.0e15 x.l=-0.1 x.h=6.1 y.l=0.0 y.h=2.1
 + doping gauss p.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
 + + char.l=0.16 lat.rotate ratio=0.65
 + doping gauss p.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
 + + char.l=0.03 lat.rotate ratio=0.65
 + doping gauss p.type conc=4e17  x.l=5 x.h=6.1 y.l=0.0 y.h=0.0
 + + char.l=0.16 lat.rotate ratio=0.65
 + doping gauss p.type conc=1e20  x.l=5.05 x.h=6.1 y.l=0.0 y.h=0.08
 + + char.l=0.03 lat.rotate ratio=0.65
 +
 + contact num=2 workf=5.29
 + models concmob surfmob transmob fieldmob srh auger conctau bgn 
 + method ac=direct itlim=10 onec
 .MODEL M_PMOS_5 numos
 + output stat
 + 
 + x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
 + x.mesh w=2.4 h.s=0.005 h.m=0.5 r=2.0
 + x.mesh w=2.4 h.e=0.005 h.m=0.5 r=2.0
 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
 + x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
 +
 + y.mesh l=-.0200 n=1
 + y.mesh l=0.0 n=6
 + y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
 + y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
 + y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
 +
 + region num=1 material=1 y.h=0.0
 + region num=2 material=2 y.l=0.0
 + interface dom=2 nei=1 x.l=1 x.h=6 layer.width=0.0
 + material num=1 oxide
 + material num=2 silicon
 +
 + elec num=1 x.l=6.5  x.h=7.1  y.l=0.0 y.h=0.0
 + elec num=2 x.l=1 x.h=6  iy.l=1  iy.h=1
 + elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
 + elec num=4 x.l=-0.1  x.h=7.1 y.l=2.0 y.h=2.0
 +
 + doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=7.1 y.l=0.0
 + + char.l=0.30
 + doping unif n.type conc=5.0e15 x.l=-0.1 x.h=7.1 y.l=0.0 y.h=2.1
 + doping gauss p.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
 + + char.l=0.16 lat.rotate ratio=0.65
 + doping gauss p.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
 + + char.l=0.03 lat.rotate ratio=0.65
 + doping gauss p.type conc=4e17  x.l=6 x.h=7.1 y.l=0.0 y.h=0.0
 + + char.l=0.16 lat.rotate ratio=0.65
 + doping gauss p.type conc=1e20  x.l=6.05 x.h=7.1 y.l=0.0 y.h=0.08
 + + char.l=0.03 lat.rotate ratio=0.65
 +
 + contact num=2 workf=5.29
 + models concmob surfmob transmob fieldmob srh auger conctau bgn 
 + method ac=direct itlim=10 onec
 .MODEL M_PMOS_10 numos
 + output stat
 + 
 + x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
 + x.mesh w=4.9 h.s=0.005 h.m=1 r=2.0
 + x.mesh w=4.9 h.e=0.005 h.m=1 r=2.0
 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
 + x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
 +
 + y.mesh l=-.0200 n=1
 + y.mesh l=0.0 n=6
 + y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
 + y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
 + y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
 +
 + region num=1 material=1 y.h=0.0
 + region num=2 material=2 y.l=0.0
 + interface dom=2 nei=1 x.l=1 x.h=11 layer.width=0.0
 + material num=1 oxide
 + material num=2 silicon
 +
 + elec num=1 x.l=11.5  x.h=12.1  y.l=0.0 y.h=0.0
 + elec num=2 x.l=1 x.h=11  iy.l=1  iy.h=1
 + elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
 + elec num=4 x.l=-0.1  x.h=12.1 y.l=2.0 y.h=2.0
 +
 + doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=12.1 y.l=0.0
 + + char.l=0.30
 + doping unif n.type conc=5.0e15 x.l=-0.1 x.h=12.1 y.l=0.0 y.h=2.1
 + doping gauss p.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
 + + char.l=0.16 lat.rotate ratio=0.65
 + doping gauss p.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
 + + char.l=0.03 lat.rotate ratio=0.65
 + doping gauss p.type conc=4e17  x.l=11 x.h=12.1 y.l=0.0 y.h=0.0
 + + char.l=0.16 lat.rotate ratio=0.65
 + doping gauss p.type conc=1e20  x.l=11.05 x.h=12.1 y.l=0.0 y.h=0.08
 + + char.l=0.03 lat.rotate ratio=0.65
 +
 + contact num=2 workf=5.29
 + models concmob surfmob transmob fieldmob srh auger conctau bgn 
 + method ac=direct itlim=10 onec
 .MODEL M_PMOS_50 numos
 + output stat
 + 
 + x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
 + x.mesh w=24.9 h.s=0.005 h.m=5 r=2.0
 + x.mesh w=24.9 h.e=0.005 h.m=5 r=2.0
 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
 + x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
 +
 + y.mesh l=-.0200 n=1
 + y.mesh l=0.0 n=6
 + y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
 + y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
 + y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
 +
 + region num=1 material=1 y.h=0.0
 + region num=2 material=2 y.l=0.0
 + interface dom=2 nei=1 x.l=1 x.h=51 layer.width=0.0
 + material num=1 oxide
 + material num=2 silicon
 +
 + elec num=1 x.l=51.5  x.h=52.1  y.l=0.0 y.h=0.0
 + elec num=2 x.l=1 x.h=51  iy.l=1  iy.h=1
 + elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
 + elec num=4 x.l=-0.1  x.h=52.1 y.l=2.0 y.h=2.0
 +
 + doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=52.1 y.l=0.0
 + + char.l=0.30
 + doping unif n.type conc=5.0e15 x.l=-0.1 x.h=52.1 y.l=0.0 y.h=2.1
 + doping gauss p.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
 + + char.l=0.16 lat.rotate ratio=0.65
 + doping gauss p.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
 + + char.l=0.03 lat.rotate ratio=0.65
 + doping gauss p.type conc=4e17  x.l=51 x.h=52.1 y.l=0.0 y.h=0.0
 + + char.l=0.16 lat.rotate ratio=0.65
 + doping gauss p.type conc=1e20  x.l=51.05 x.h=52.1 y.l=0.0 y.h=0.08
 + + char.l=0.03 lat.rotate ratio=0.65
 +
 + contact num=2 workf=5.29
 + models concmob surfmob transmob fieldmob srh auger conctau bgn
 + method ac=direct itlim=10 onec
 **
 * BSIM1 NMOS and PMOS 1.0 \um models.
 * Gummel-Poon bipolar models.
 **
 .model M_NSIM_1 nmos level=4
 +vfb= -1.1908
 +phi= .8399
 +k1= 1.5329
 +k2= 193.7322m
 +eta= 2m
 +muz= 746.0
 +u0= 90.0m
 +x2mz= 10.1429
 +x2e= -2.5m
 +x3e= 0.2m
 +x2u0= -10.0m
 +mus= 975.0
 +u1= .20
 +x2ms= 0.0
 +x2u1= 0.0
 +x3ms= 10
 +x3u1= 5.0m
 +tox=2.00000e-02
 +cgdo=2.0e-10
 +cgso=2.0e-10
 +cgbo=0.0
 +temp= 27
 +vdd= 7.0
 +xpart
 +n0= 1.5686
 +nb= 94.6392m
 +nd=0.00000e+00
 +rsh=30.0         cj=7.000e-004     cjsw=4.20e-010
 +js=1.00e-008     pb=0.700e000
 +pbsw=0.8000e000  mj=0.5            mjsw=0.33
 +wdf=0            dell=0.20u
 .model M_PSIM_1 pmos level=4
 +vfb= -1.3674
 +phi= .8414
 +k1= 1.5686
 +k2= 203m
 +eta= 2m
 +muz= 340.0
 +u0= 35.0m
 +x2mz= 6.0
 +x2e= 0.0
 +x3e= -0.2m
 +x2u0= -15.0m
 +mus= 440.0
 +u1=  .38
 +x2ms= 0.0
 +x2u1= 0.0
 +x3ms= -20
 +x3u1= -10.0m
 +tox=2.00000e-02
 +cgdo=2.0e-10
 +cgso=2.0e-10
 +cgbo=0.0
 +temp= 27
 +vdd= 5.0
 +xpart
 +n0= 1.5686
 +nb= 94.6392m
 +nd=0.00000e+00
 +rsh=80.0         cj=7.000e-004     cjsw=4.20e-010
 +js=1.00e-008     pb=0.700e000
 +pbsw=0.8000e000  mj=0.5            mjsw=0.33
 +wdf=0            dell=0.17u
 .model M_GNPN npn
 + is=1.3e-16
 + nf=1.00 bf=262.5 ikf=25mA  vaf=20v
 + nr=1.00 br=97.5 ikr=0.5mA var=1.8v
 + rc=20.0
 + re=0.09
 + rb=15.0
 + ise=4.0e-16 ne=2.1
 + isc=7.2e-17 nc=2.0
 + tf=9.4ps itf=26uA xtf=0.5
 + tr=10ns
 + cje=89.44fF vje=0.95 mje=0.5
 + cjc=12.82fF vjc=0.73 mjc=0.49
 .model M_GPNP pnp
 + is=5.8e-17
 + nf=1.001 bf=96.4 ikf=12mA  vaf=29v
 + nr=1.0   br=17.3 ikr=0.2mA var=2.0v
 + rc=50.0
 + re=0.17
 + rb=20.0
 + ise=6.8e-17 ne=2.0
 + isc=9.0e-17 nc=2.1
 + tf=27.4ps itf=26uA xtf=0.5
 + tr=10ns
 + cje=55.36fF vje=0.95 mje=0.58
 + cjc=11.80fF vjc=0.72 mjc=0.46
--- a/examples/cider/parallel/bicmpd.cir
+++ b/examples/cider/parallel/bicmpd.cir
@ -0,0 +1,26 @@
 BICMOS INVERTER PULLDOWN CIRCUIT
 VSS 2 0 0V
 VIN 3 2 0V (PULSE 0.0V 4.2V 0NS 1NS 1NS 9NS 20NS)
 M1  8 3 5 11 M_NMOS_1 W=4U L=1U
 VD  4 8 0V
 VBK 11 2 0V
 Q1  10 7 9   M_NPNS AREA=8
 VC  4 10 0V
 VB  5 7 0V
 VE  9 2 0V
 CL  4 6 1PF
 VL  6 2 0V
 .IC V(10)=5.0V V(7)=0.0V 
 .TRAN 0.1NS 5NS 0NS 0.1NS
 .PLOT TRAN I(VIN)
 .INCLUDE BICMOS.LIB
 .OPTIONS ACCT BYPASS=1
 .END
--- a/examples/cider/parallel/bicmpu.cir
+++ b/examples/cider/parallel/bicmpu.cir
@ -0,0 +1,24 @@
 BICMOS INVERTER PULLUP CIRCUIT
 VDD 1 0 5.0V
 VSS 2 0 0.0V
 VIN 3 0 0.75V
 VC  1 11 0.0V
 VB  5 15 0.0V
 Q1  11 15 4 M_NPNS   AREA=8
 M1  5 3 1 1 M_PMOS_1 W=10U L=1U
 CL  4 0 5.0PF
 .IC V(4)=0.75V V(5)=0.0V
 .INCLUDE BICMOS.LIB
 .TRAN 0.5NS 4.0NS
 .PRINT TRAN V(3) V(4)
 .OPTION ACCT BYPASS=1
 .END
--- a/examples/cider/parallel/clkfeed.cir
+++ b/examples/cider/parallel/clkfeed.cir
@ -0,0 +1,34 @@
 SWITCHED CURRENT CELL - CLOCK FEEDTHROUGH
 VDD 1 0 5.0V
 VSS 2 0 0.0V
 IIN 13 0 0.0
 VIN 13 3 0.0
 VL  4 0 2.5V
 VCK 6 0 5.0V PULSE 5.0V 0.0V 5.0NS 5NS 5NS 20NS 50NS
 M1   3  3  2  2 M_NMOS_5 W=5U L=5U
 M2   4  5  2  2 M_NMOS_5 W=10U L=5U
 M3  23 26 25 22 M_NMOS_5 W=5U L=5U
 RLK1 3 0 100G
 RLK2 5 0 100G
 VD  3 23 0.0V
 VG  6 26 0.0V
 VS  5 25 0.0V
 VB  2 22 0.0V
 M4  7 7 1 1 M_PMOS_IDEAL  W=100U L=1U
 M5  3 7 1 1 M_PMOS_IDEAL  W=100U L=1U
 M6  4 7 1 1 M_PMOS_IDEAL  W=200U L=1U
 IREF 7 0 50UA 
 ****** MODELS ******
 .MODEL M_PMOS_IDEAL PMOS VTO=-1.0V KP=100U
 .INCLUDE BICMOS.LIB
 .TRAN 0.1NS 50NS
 .OPTIONS ACCT BYPASS=1 METHOD=GEAR
 .END
--- a/examples/cider/parallel/cmosamp.cir
+++ b/examples/cider/parallel/cmosamp.cir
@ -0,0 +1,29 @@
 CMOS 2-STAGE OPERATIONAL AMPLIFIER
 VDD 1 0  2.5V
 VSS 2 0 -2.5V
 IBIAS 9 0 100UA
 VPL 3 0 0.0V AC 0.5V
 VMI 4 0 0.0V AC 0.5V 180
 M1  6 3 5 5 M_PMOS_1 W=15U  L=1U
 M2  7 4 5 5 M_PMOS_1 W=15U  L=1U
 M3  6 6 2 2 M_NMOS_1 W=7.5U L=1U
 M4  7 6 2 2 M_NMOS_1 W=7.5U L=1U
 M5  8 7 2 2 M_NMOS_1 W=15U  L=1U
 M6  9 9 1 1 M_PMOS_1 W=15U  L=1U
 M7  5 9 1 1 M_PMOS_1 W=15U  L=1U
 M8  8 9 1 1 M_PMOS_1 W=15U  L=1U
 *CC  7 8 0.1PF
 .INCLUDE BICMOS.LIB
 *.OP
 *.AC DEC 10 1K 100G
 .DC VPL -5MV 5MV 0.1MV
 .OPTIONS ACCT BYPASS=1 METHOD=GEAR
 .END
--- a/examples/cider/parallel/eclinv.cir
+++ b/examples/cider/parallel/eclinv.cir
@ -0,0 +1,30 @@
 ECL INVERTER
 *** (FROM MEINERZHAGEN ET AL.)
 VCC 1 0 0.0V
 VEE 2 0 -5.2V
 VIN 3 0 -1.25V
 VRF 4 0 -1.25V
 *** INPUT STAGE
 Q1 5 3 9 M_NPNS AREA=8
 Q2 6 4 9 M_NPNS AREA=8
 R1 1 5 662
 R2 1 6 662
 R3 9 2 2.65K
 *** OUTPUT BUFFERS
 Q3 1 5 7 M_NPNS AREA=8
 Q4 1 6 8 M_NPNS AREA=8
 R4 7 2 4.06K
 R5 8 2 4.06K
 *** MODEL LIBRARY
 .INCLUDE BICMOS.LIB
 .DC VIN -2.00 0.001 0.05
 .PLOT DC V(7) V(8)
 .OPTIONS ACCT BYPASS=1
 .END
--- a/examples/cider/parallel/ecpal.cir
+++ b/examples/cider/parallel/ecpal.cir
@ -0,0 +1,19 @@
 EMITTER COUPLED PAIR WITH ACTIVE LOAD
 VCC	1 0 5V
 VEE	2 0 0V
 VINP	4 0 2.99925V  AC 0.5V
 VINM	7 0 3V        AC 0.5V 180
 IEE	5 2 0.1MA
 Q1	3 4 5 M_NPNS AREA=8
 Q2	6 7 5 M_NPNS AREA=8
 Q3	3 3 1 M_PNPS AREA=8
 Q4	6 3 1 M_PNPS AREA=8
 .AC DEC 10 10K 100G
 .PLOT AC VDB(6)
 .INCLUDE BICMOS.LIB
 .OPTIONS ACCT RELTOL=1E-6
 .END
--- a/examples/cider/parallel/foobar
+++ b/examples/cider/parallel/foobar
@ -0,0 +1,10 @@
 \section*{BICMPD Benchmark}
 \section*{BICMPU Benchmark}
 \section*{CLKFEED Benchmark}
 \section*{CMOSAMP Benchmark}
 \section*{ECLINV Benchmark}
 \section*{ECPAL Benchmark}
 \section*{GMAMP Benchmark}
 \section*{LATCH Benchmark}
 \section*{PPEF Benchmarks}
 \section*{RINGOSC Benchmarks}
--- a/examples/cider/parallel/gmamp.cir
+++ b/examples/cider/parallel/gmamp.cir
@ -0,0 +1,34 @@
 BICMOS 3-STAGE AMPLIFIER
 *** IN GRAY & MEYER, 3RD ED. P.266, PROB. 3.12, 8.19
 VDD 1 0 5.0V
 VSS 2 0 0.0V
 *** VOLTAGE INPUT
 *VIN 13 0 0.0V AC 1V
 *CIN 13 3 1UF
 *** CURRENT INPUT
 IIN 3 0 0.0 AC 1.0
 M1  4 3 2 2 M_NMOS_1 W=300U L=1U
 M2  7 7 2 2 M_NMOS_1 W=20U  L=1U
 Q1  6 5 4   M_NPNS AREA=40
 Q2  5 5 7   M_NPNS AREA=40
 Q3  1 6 8   M_NPNS AREA=40
 RL1 1 4     1K
 RL2 1 6     10K
 RB1 1 5     10K
 RL3 8 2     1K
 RF1 3 8     30K
 *** NUMERICAL MODEL LIBRARY ***
 .INCLUDE BICMOS.LIB
 .AC DEC 10 100KHZ 100GHZ
 .PLOT AC VDB(8)
 .OPTIONS ACCT BYPASS=1 KEEPOPINFO
 .END
--- a/examples/cider/parallel/latch.cir
+++ b/examples/cider/parallel/latch.cir
@ -0,0 +1,46 @@
 STATIC LATCH
 ***   IC=1MA, RE6=3K
 ***   SPICE ORIGINAL 1-7-80, CIDER REVISED 4-16-93
 ***   BIAS CIRCUIT
 ***   RESISTORS
 RCC2 6 8 3.33K
 REE2 9 0 200
 ***   TRANSISTORS
 Q1 6 8 4 M_NPN1D AREA=8
 Q2 8 4 9 M_NPN1D AREA=8
 ***   MODELS
 .INCLUDE BICMOS.LIB
 ***   SOURCES
 VCC 6 0 5V
 VREF 3 0 2.5V
 VRSET 1 0 PULSE(2V 3V 0.1NS 0.1NS 0.1NS 0.9NS 4NS)
 VSET  7 0 PULSE(2V 3V 2.1NS 0.1NS 0.1NS 0.9NS 4NS)
 ***   LATCH
 X1 1 2 3 4 5 6 ECLNOR2
 X2 5 7 3 4 2 6 ECLNOR2
 ***   SUBCIRCUITS
 .SUBCKT ECLNOR2 1 2 3 4 5 6
 **  RESISTORS
 RS 6 11 520
 RC2 11 10 900
 RE4 12 0 200
 RE6 5 0 6K
 **  TRANSISTORS
 Q1 9 1 8 M_NPN1D AREA=8
 Q2 9 2 8 M_NPN1D AREA=8
 Q3 11 3 8 M_NPN1D AREA=8
 Q4 8 4 12 M_NPN1D AREA=8
 Q5 10 10 9 M_NPN1D AREA=8
 Q6 6 9 5 M_NPN1D AREA=8
 .ENDS ECLNOR2
 ***   CONTROL CARDS
 .TRAN 0.01NS 8NS
 .PRINT TRAN V(1) V(7) V(5) V(2)
 .OPTIONS ACCT BYPASS=1
 .END
--- a/examples/cider/parallel/ppef.1d.cir
+++ b/examples/cider/parallel/ppef.1d.cir
@ -0,0 +1,25 @@
 PUSH-PULL EMITTER FOLLOWER - ONE-DIMENSIONAL MODELS
 VCC 1 0  5.0V
 VEE 2 0 -5.0V
 VIN 3 0  0.0V (SIN 0.0V 0.1V 1KHZ) AC 1
 VBU 13 3 0.7V
 VBL 3 23 0.7V
 RL  4 44  50
 VLD 44 0 0V
 Q1  5  13 4 M_NPN1D AREA=40
 Q2  4  5  1 M_PNP1D AREA=200
 Q3  6  23 4 M_PNP1D AREA=100
 Q4  4  6  2 M_NPN1D AREA=80
 .INCLUDE BICMOS.LIB
 .TRAN 0.01MS 1.00001MS 0US 0.01MS
 .PLOT TRAN V(4)
 .OPTIONS ACCT BYPASS=1 TEMP=26.85OC RELTOL=1E-5
 .END
--- a/examples/cider/parallel/ppef.2d.cir
+++ b/examples/cider/parallel/ppef.2d.cir
@ -0,0 +1,25 @@
 PUSH-PULL EMITTER FOLLOWER - TWO-DIMENSIONAL MODELS
 VCC 1 0  5.0V
 VEE 2 0 -5.0V
 VIN 3 0  0.0V (SIN 0.0V 0.1V 1KHZ) AC 1
 VBU 13 3 0.7V
 VBL 3 23 0.7V
 RL  4 44  50
 VLD 44 0 0V
 Q1  5  13 4 M_NPNS AREA=40
 Q2  4  5  1 M_PNPS AREA=200
 Q3  6  23 4 M_PNPS AREA=100
 Q4  4  6  2 M_NPNS AREA=80
 .INCLUDE BICMOS.LIB
 .TRAN 0.01MS 1.00001MS 0US 0.01MS
 .PLOT TRAN V(4)
 .OPTIONS ACCT BYPASS=1 TEMP=26.85OC RELTOL=1E-5
 .END
--- a/examples/cider/parallel/readme
+++ b/examples/cider/parallel/readme
@ -0,0 +1,3 @@
 This directory contains the additional CIDER parallel-version benchmarks
 used in the thesis "Design-Oriented Mixed-Level Circuit and Device Simulation"
 by David A. Gates.
--- a/examples/cider/parallel/ringosc.1u.cir
+++ b/examples/cider/parallel/ringosc.1u.cir
@ -0,0 +1,39 @@
 CMOS RING OSCILLATOR - 1UM DEVICES
 VDD 1 0 5.0V
 VSS 2 0 0.0V
 X1 1 2 3 4 INV
 X2 1 2 4 5 INV
 X3 1 2 5 6 INV
 X4 1 2 6 7 INV
 X5 1 2 7 8 INV
 X6 1 2 8 9 INV
 X7 1 2 9 3 INV
 .IC V(3)=0.0V V(4)=2.5V V(5)=5.0V
 +   V(6)=0.0V V(7)=5.0V V(8)=0.0V V(9)=5.0V
 .SUBCKT INV 1   2   3   4
 *           VDD VSS VIN VOUT
 M1  14 13 15 16 M_PMOS_1 W=6.0U
 M2  24 23 25 26 M_NMOS_1 W=3.0U
 VGP 3 13 0.0V
 VDP 4 14 0.0V
 VSP 1 15 0.0V
 VBP 1 16 0.0V
 VGN 3 23 0.0V
 VDN 4 24 0.0V
 VSN 2 25 0.0V
 VBN 2 26 0.0V
 .ENDS INV
 .INCLUDE BICMOS.LIB
 .TRAN 0.1NS 1NS
 .PRINT TRAN V(3) V(4) V(5)
 .OPTIONS ACCT BYPASS=1 METHOD=GEAR
 .END
--- a/examples/cider/parallel/ringosc.2u.cir
+++ b/examples/cider/parallel/ringosc.2u.cir
@ -0,0 +1,114 @@
 CMOS RING OSCILLATOR - 2UM DEVICES
 VDD 1 0 5.0V
 VSS 2 0 0.0V
 X1 1 2 3 4 INV
 X2 1 2 4 5 INV
 X3 1 2 5 6 INV
 X4 1 2 6 7 INV
 X5 1 2 7 8 INV
 X6 1 2 8 9 INV
 X7 1 2 9 3 INV
 .IC V(3)=0.0V V(4)=2.5V V(5)=5.0V V(6)=0.0V
 + V(7)=5.0V V(8)=0.0V V(9)=5.0V
 .SUBCKT INV 1   2   3   4
 *           VDD VSS VIN VOUT
 M1  14 13 15 16 M_PMOS W=6.0U
 M2  24 23 25 26 M_NMOS W=3.0U
 VGP 3 13 0.0V
 VDP 4 14 0.0V
 VSP 1 15 0.0V
 VBP 1 16 0.0V
 VGN 3 23 0.0V
 VDN 4 24 0.0V
 VSN 2 25 0.0V
 VBN 2 26 0.0V
 .ENDS INV
 .MODEL M_NMOS NUMOS
 + X.MESH L=0.0 N=1
 + X.MESH L=0.6 N=4
 + X.MESH L=0.7 N=5
 + X.MESH L=1.0 N=7
 + X.MESH L=1.2 N=11
 + X.MESH L=3.2 N=21
 + X.MESH L=3.4 N=25
 + X.MESH L=3.7 N=27
 + X.MESH L=3.8 N=28
 + X.MESH L=4.4 N=31
 +
 + Y.MESH L=-.05 N=1
 + Y.MESH L=0.0  N=5
 + Y.MESH L=.05  N=9
 + Y.MESH L=0.3  N=14
 + Y.MESH L=2.0  N=19
 +
 + REGION NUM=1 MATERIAL=1 Y.L=0.0
 + MATERIAL NUM=1 SILICON
 + MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG
 +
 + REGION NUM=2 MATERIAL=2 Y.H=0.0 X.L=0.7 X.H=3.7
 + MATERIAL NUM=2 OXIDE
 +
 + ELEC NUM=1 X.L=3.8 X.H=4.4	Y.L=0.0 Y.H=0.0
 + ELEC NUM=2 X.L=0.7 X.H=3.7	IY.L=1  IY.H=1
 + ELEC NUM=3 X.L=0.0 X.H=0.6	Y.L=0.0 Y.H=0.0
 + ELEC NUM=4 X.L=0.0 X.H=4.4	Y.L=2.0 Y.H=2.0
 +
 + DOPING UNIF P.TYPE CONC=2.5E16 X.L=0.0 X.H=4.4  Y.L=0.0 Y.H=2.0
 + DOPING UNIF P.TYPE CONC=1E16   X.L=0.0 X.H=4.4  Y.L=0.0 Y.H=0.05
 + DOPING UNIF N.TYPE CONC=1E20   X.L=0.0 X.H=1.1  Y.L=0.0 Y.H=0.2
 + DOPING UNIF N.TYPE CONC=1E20   X.L=3.3 X.H=4.4  Y.L=0.0 Y.H=0.2
 +
 + MODELS CONCMOB FIELDMOB BGN SRH CONCTAU
 + METHOD AC=DIRECT ONEC
 + OUTPUT ^ALL.DEBUG
 .MODEL M_PMOS NUMOS
 + X.MESH L=0.0 N=1
 + X.MESH L=0.6 N=4
 + X.MESH L=0.7 N=5
 + X.MESH L=1.0 N=7
 + X.MESH L=1.2 N=11
 + X.MESH L=3.2 N=21
 + X.MESH L=3.4 N=25
 + X.MESH L=3.7 N=27
 + X.MESH L=3.8 N=28
 + X.MESH L=4.4 N=31
 +
 + Y.MESH L=-.05 N=1
 + Y.MESH L=0.0  N=5
 + Y.MESH L=.05  N=9
 + Y.MESH L=0.3  N=14
 + Y.MESH L=2.0  N=19
 +
 + REGION NUM=1 MATERIAL=1 Y.L=0.0
 + MATERIAL NUM=1 SILICON
 + MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG
 +
 + REGION NUM=2 MATERIAL=2 Y.H=0.0 X.L=0.7 X.H=3.7
 + MATERIAL NUM=2 OXIDE
 +
 + ELEC NUM=1 X.L=3.8 X.H=4.4	Y.L=0.0 Y.H=0.0
 + ELEC NUM=2 X.L=0.7 X.H=3.7	IY.L=1  IY.H=1
 + ELEC NUM=3 X.L=0.0 X.H=0.6	Y.L=0.0 Y.H=0.0
 + ELEC NUM=4 X.L=0.0 X.H=4.4	Y.L=2.0 Y.H=2.0
 +
 + DOPING UNIF N.TYPE CONC=1E16   X.L=0.0 X.H=4.4  Y.L=0.0 Y.H=2.0
 + DOPING UNIF P.TYPE CONC=3E16   X.L=0.0 X.H=4.4  Y.L=0.0 Y.H=0.05
 + DOPING UNIF P.TYPE CONC=1E20   X.L=0.0 X.H=1.1  Y.L=0.0 Y.H=0.2
 + DOPING UNIF P.TYPE CONC=1E20   X.L=3.3 X.H=4.4  Y.L=0.0 Y.H=0.2
 +
 + MODELS CONCMOB FIELDMOB BGN SRH CONCTAU
 + METHOD AC=DIRECT ONEC
 + OUTPUT ^ALL.DEBUG
 .TRAN 0.1NS 5.0NS
 .PRINT V(4)
 .OPTIONS ACCT BYPASS=1 METHOD=GEAR
 .END
--- a/examples/cider/resistor/gaasres.cir
+++ b/examples/cider/resistor/gaasres.cir
@ -0,0 +1,30 @@
 Gallium Arsenide Resistor
 * This transient simulation demonstrates the effects of velocity overshoot
 * and velocity saturation at high lateral electric fields.
 * Do not try to do DC analysis of this resistor. It will not converge
 * because of the peculiar characteristics of the GaAs velocity-field
 * relation.  In some cases, problems can arise in transient simulation
 * as well.
 VPP 1 0 1v PWL 0s 0.0v 10s 1v
 VNN 2 0 0.0v 
 D1 1 2 M_RES AREA=1
 .MODEL M_RES numd level=1
 + options resistor defa=1p
 + x.mesh loc=0.0 num=1
 + x.mesh loc=1.0 num=101
 + domain   num=1 material=1
 + material num=1 gaas
 + doping unif n.type conc=2.5e16
 + models fieldmob srh auger conctau
 + method ac=direct
 *.OP
 *.DC VPP 0.0v 10.01v 0.1v
 .TRAN 1s 10.001s 0s 0.1s
 .PRINT I(VPP)
 .OPTION ACCT BYPASS=1
 .END
--- a/examples/cider/resistor/sires.cir
+++ b/examples/cider/resistor/sires.cir
@ -0,0 +1,26 @@
 Silicon Resistor
 * This simulation demonstrates the effects of velocity saturation at
 * high lateral electric fields.
 VPP 1 0 10v PWL 0s 0.0v 100s 10v
 VNN 2 0 0.0v 
 D1 1 2 M_RES AREA=1
 .MODEL M_RES numd level=1
 + options resistor defa=1p
 + x.mesh loc=0.0 num=1
 + x.mesh loc=1.0 num=101
 + domain   num=1 material=1
 + material num=1 silicon
 + doping unif n.type conc=2.5e16
 + models bgn srh conctau auger concmob fieldmob
 + method ac=direct
 *.OP
 .DC VPP 0.0v 10.01v 0.1v
 *.TRAN 1s 100.001s 0s 0.2s
 .PRINT I(VPP)
 .OPTION ACCT BYPASS=1 RELTOL=1e-12
 .END
--- a/examples/cider/serial/astable.cir
+++ b/examples/cider/serial/astable.cir
@ -0,0 +1,30 @@
 ASTABLE MULTIVIBRATOR
 VIN 5 0 DC 0 PULSE(0 5 0 1US 1US 100US 100US)
 VCC 6 0 5.0
 RC1 6 1 1K
 RC2 6 2 1K
 RB1 6 3 30K
 RB2 5 4 30K
 C1 1 4 150PF
 C2 2 3 150PF
 Q1 1 3 0 QMOD AREA = 100P
 Q2 2 4 0 QMOD AREA = 100P
 .OPTION ACCT BYPASS=1
 .TRAN 0.05US 8US 0US 0.05US
 .PRINT TRAN V(1) V(2) V(3) V(4)
 .MODEL QMOD NBJT LEVEL=1
 + X.MESH NODE=1  LOC=0.0
 + X.MESH NODE=61 LOC=3.0
 + REGION NUM=1 MATERIAL=1
 + MATERIAL NUM=1 SILICON NBGNN=1E17 NBGNP=1E17
 + MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG
 + DOPING UNIF N.TYPE CONC=1E17 X.L=0.0 X.H=1.0
 + DOPING UNIF P.TYPE CONC=1E16 X.L=0.0 X.H=1.5
 + DOPING UNIF N.TYPE CONC=1E15 X.L=0.0 X.H=3.0
 + MODELS BGNW SRH CONCTAU AUGER CONCMOB FIELDMOB
 + OPTIONS BASE.LENGTH=1.0 BASE.DEPTH=1.25
 .END
--- a/examples/cider/serial/charge.cir
+++ b/examples/cider/serial/charge.cir
@ -0,0 +1,53 @@
 MOS CHARGE PUMP
 VIN 4 0 DC 0V PULSE 0 5 15NS 5NS 5NS 50NS 100NS
 VDD 5 6 DC 0V PULSE 0 5 25NS 5NS 5NS 50NS 100NS
 VBB 0 7 DC 0V PULSE 0 5  0NS 5NS 5NS 50NS 100NS
 RD 6 2 10K
 M1 5 4 3 7 MMOD W=100UM
 VS 3 2 0
 VC 2 1 0
 C2 1 0 10PF
 .IC V(3)=1.0
 .TRAN 2NS 200NS
 .OPTIONS ACCT BYPASS=1
 .PRINT TRAN V(1) V(2)
 .MODEL MMOD NUMOS
 + X.MESH N=1 L=0
 + X.MESH N=3 L=0.4
 + X.MESH N=7 L=0.6
 + X.MESH N=15 L=1.4
 + X.MESH N=19 L=1.6
 + X.MESH N=21 L=2.0
 +
 + Y.MESH N=1 L=0
 + Y.MESH N=4 L=0.015
 + Y.MESH N=8 L=0.05
 + Y.MESH N=12 L=0.25
 + Y.MESH N=14 L=0.35
 + Y.MESH N=17 L=0.5
 + Y.MESH N=21 L=1.0
 +
 + REGION NUM=1 MATERIAL=1 Y.L=0.015
 + MATERIAL NUM=1 SILICON
 + MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG
 +
 + REGION NUM=2 MATERIAL=2 Y.H=0.015 X.L=0.5 X.H=1.5
 + MATERIAL NUM=2 OXIDE
 +
 + ELEC NUM=1 IX.L=18 IX.H=21   IY.L=4  IY.H=4
 + ELEC NUM=2 IX.L=5  IX.H=17   IY.L=1  IY.H=1
 + ELEC NUM=3 IX.L=1  IX.H=4    IY.L=4  IY.H=4
 + ELEC NUM=4 IX.L=1  IX.H=21   IY.L=21 IY.H=21
 +
 + DOPING UNIF N.TYPE CONC=1E18   X.L=0.0 X.H=0.5 Y.L=0.015 Y.H=0.25
 + DOPING UNIF N.TYPE CONC=1E18   X.L=1.5 X.H=2.0 Y.L=0.015 Y.H=0.25
 + DOPING UNIF P.TYPE CONC=1E15   X.L=0.0 X.H=2.0 Y.L=0.015 Y.H=1.0
 + DOPING UNIF P.TYPE CONC=1.3E17 X.L=0.5 X.H=1.5 Y.L=0.015 Y.H=0.05
 +
 + MODELS CONCMOB FIELDMOB
 + METHOD ONEC
 .END
--- a/examples/cider/serial/colposc.cir
+++ b/examples/cider/serial/colposc.cir
@ -0,0 +1,29 @@
 COLPITT'S OSCILLATOR CIRCUIT
 R1 1 0 1
 Q1 2 1 3 QMOD AREA = 100P
 VCC 4 0 5 
 RL 4 2 750
 C1 2 3 500P
 C2 4 3 4500P
 L1 4 2 5UH
 RE 3 6 4.65K
 VEE 6 0 DC -15 PWL 0 -15 1E-9 -10 
 .TRAN 30N 12U
 .PRINT TRAN V(2)
 .MODEL QMOD NBJT LEVEL=1
 + X.MESH NODE=1  LOC=0.0
 + X.MESH NODE=61 LOC=3.0
 + REGION NUM=1 MATERIAL=1
 + MATERIAL NUM=1 SILICON NBGNN=1E17 NBGNP=1E17
 + MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG
 + DOPING UNIF N.TYPE CONC=1E17 X.L=0.0 X.H=1.0
 + DOPING UNIF P.TYPE CONC=1E16 X.L=0.0 X.H=1.5
 + DOPING UNIF N.TYPE CONC=1E15 X.L=0.0 X.H=3.0
 + MODELS BGNW SRH CONCTAU AUGER CONCMOB FIELDMOB
 + OPTIONS BASE.LENGTH=1.0 BASE.DEPTH=1.25
 .OPTIONS ACCT BYPASS=1
 .END
--- a/examples/cider/serial/dbridge.cir
+++ b/examples/cider/serial/dbridge.cir
@ -0,0 +1,30 @@
 DIODE BRIDGE RECTIFIER
 VLINE 3 4 0.0V SIN 0V 10V 60HZ
 VGRND 2 0 0.0V 
 D1 3 1 M_PN AREA=100
 D2 4 1 M_PN AREA=100
 D3 2 3 M_PN AREA=100
 D4 2 4 M_PN AREA=100
 RL 1 2 1.0K
 .MODEL M_PN NUMD LEVEL=1
 + ***************************************
 + *** ONE-DIMENSIONAL NUMERICAL DIODE ***
 + ***************************************
 + OPTIONS DEFA=1P
 + X.MESH LOC=0.0 N=1
 + X.MESH LOC=30.0 N=201
 + DOMAIN   NUM=1 MATERIAL=1
 + MATERIAL NUM=1 SILICON
 + MOBILITY MAT=1 CONCMOD=CT FIELDMOD=CT
 + DOPING GAUSS P.TYPE CONC=1E20 X.L=0.0  X.H=0.0 CHAR.L=1.0
 + DOPING UNIF  N.TYPE CONC=1E14 X.L=0.0  X.H=30.0
 + DOPING GAUSS N.TYPE CONC=5E19 X.L=30.0  X.H=30.0 CHAR.L=2.0 
 + MODELS BGN ^AVAL SRH AUGER CONCTAU CONCMOB FIELDMOB
 + METHOD AC=DIRECT
 .OPTION ACCT BYPASS=1 METHOD=GEAR
 .TRAN 0.5MS 50MS
 .PRINT I(VLINE)
 .END
--- a/examples/cider/serial/invchain.cir
+++ b/examples/cider/serial/invchain.cir
@ -0,0 +1,34 @@
 4 STAGE RTL INVERTER CHAIN
 VIN 1 0 DC 0V PWL 0NS 0V 1NS 5V
 VCC 12 0 DC 5.0V
 RC1 12 3 2.5K
 RB1 1 2 8K
 Q1 3 2 0 QMOD AREA = 100P
 RB2 3 4 8K
 RC2 12 5 2.5K
 Q2 5 4 0 QMOD AREA = 100P
 RB3 5 6 8K
 RC3 12 7 2.5K
 Q3 7 6 0 QMOD AREA = 100P
 RB4 7 8 8K
 RC4 12 9 2.5K
 Q4 9 8 0 QMOD AREA = 100P
 .PRINT TRAN V(3) V(5) V(9)
 .TRAN 1E-9 10E-9
 .MODEL QMOD NBJT LEVEL=1
 + X.MESH NODE=1  LOC=0.0
 + X.MESH NODE=61 LOC=3.0
 + REGION NUM=1 MATERIAL=1
 + MATERIAL NUM=1 SILICON NBGNN=1E17 NBGNP=1E17
 + MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG
 + DOPING UNIF N.TYPE CONC=1E17 X.L=0.0 X.H=1.0
 + DOPING UNIF P.TYPE CONC=1E16 X.L=0.0 X.H=1.5
 + DOPING UNIF N.TYPE CONC=1E15 X.L=0.0 X.H=3.0
 + MODELS BGNW SRH CONCTAU AUGER CONCMOB FIELDMOB
 + OPTIONS BASE.LENGTH=1.0 BASE.DEPTH=1.25
 .OPTION ACCT BYPASS=1
 .END
--- a/examples/cider/serial/meclgate.cir
+++ b/examples/cider/serial/meclgate.cir
@ -0,0 +1,70 @@
 MOTOROLA MECL III ECL GATE
 *.DC VIN -2.0 0 0.02
 .TRAN 0.2NS 20NS
 VEE 22 0 -6.0
 VIN 1 0 PULSE -0.8 -1.8 0.2NS 0.2NS 0.2NS 10NS 20NS
 RS 1 2 50
 Q1 4 2 6 QMOD AREA = 100P
 Q2 4 3 6 QMOD AREA = 100P
 Q3 5 7 6 QMOD AREA = 100P
 Q4 0 8 7 QMOD AREA = 100P
 D1 8 9 DMOD
 D2 9 10 DMOD
 RP1 3 22 50K
 RC1 0 4 100
 RC2 0 5 112
 RE 6 22 380
 R1 7 22 2K
 R2 0 8 350
 R3 10 22 1958
 Q5 0 5 11 QMOD AREA = 100P
 Q6 0 4 12 QMOD AREA = 100P
 RP2 11 22 560
 RP3 12 22 560
 Q7 13 12 15 QMOD AREA = 100P
 Q8 14 16 15 QMOD AREA = 100P
 RE2 15 22 380
 RC3 0 13 100
 RC4 0 14 112
 Q9 0 17 16 QMOD AREA = 100P
 R4 16 22 2K
 R5 0 17 350
 D3 17 18 DMOD
 D4 18 19 DMOD
 R6 19 22 1958
 Q10 0 14 20 QMOD AREA = 100P
 Q11 0 13 21 QMOD AREA = 100P
 RP4 20 22 560
 RP5 21 22 560
 .MODEL DMOD D RS=40 TT=0.1NS CJO=0.9PF N=1 IS=1E-14 EG=1.11 VJ=0.8 M=0.5
 .MODEL QMOD NBJT LEVEL=1
 + X.MESH NODE=1  LOC=0.0
 + X.MESH NODE=10 LOC=0.9
 + X.MESH NODE=20 LOC=1.1
 + X.MESH NODE=30 LOC=1.4
 + X.MESH NODE=40 LOC=1.6
 + X.MESH NODE=61 LOC=3.0
 + REGION NUM=1 MATERIAL=1
 + MATERIAL NUM=1 SILICON NBGNN=1E17 NBGNP=1E17
 + MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG
 + DOPING UNIF N.TYPE CONC=1E17 X.L=0.0 X.H=1.0
 + DOPING UNIF P.TYPE CONC=1E16 X.L=0.0 X.H=1.5
 + DOPING UNIF N.TYPE CONC=1E15 X.L=0.0 X.H=3.0
 + MODELS BGNW SRH CONCTAU AUGER CONCMOB FIELDMOB
 + OPTIONS BASE.LENGTH=1.0 BASE.DEPTH=1.25
 .OPTIONS ACCT BYPASS=1
 .PRINT TRAN V(12) V(21)
 .END
--- a/examples/cider/serial/nmosinv.cir
+++ b/examples/cider/serial/nmosinv.cir
@ -0,0 +1,51 @@
 RESISTIVE LOAD NMOS INVERTER
 VIN 1 0 PWL 0 0.0 2NS 5
 VDD 3 0 DC 5.0
 RD 3 2 2.5K
 M1 2 1 4 5 MMOD W=10UM
 CL 2 0 2PF
 VB 5 0 0
 VS 4 0 0
 .MODEL MMOD NUMOS
 + X.MESH L=0.0 N=1
 + X.MESH L=0.6 N=4
 + X.MESH L=0.7 N=5
 + X.MESH L=1.0 N=7
 + X.MESH L=1.2 N=11
 + X.MESH L=3.2 N=21
 + X.MESH L=3.4 N=25
 + X.MESH L=3.7 N=27
 + X.MESH L=3.8 N=28
 + X.MESH L=4.4 N=31
 +
 + Y.MESH L=-.05 N=1
 + Y.MESH L=0.0  N=5
 + Y.MESH L=.05  N=9
 + Y.MESH L=0.3  N=14
 + Y.MESH L=2.0  N=19
 +
 + REGION NUM=1 MATERIAL=1 Y.L=0.0
 + MATERIAL NUM=1 SILICON
 + MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG
 +
 + REGION NUM=2 MATERIAL=2 Y.H=0.0 X.L=0.7 X.H=3.7
 + MATERIAL NUM=2 OXIDE
 +
 + ELEC NUM=1 X.L=3.8 X.H=4.4	Y.L=0.0 Y.H=0.0
 + ELEC NUM=2 X.L=0.7 X.H=3.7	IY.L=1  IY.H=1
 + ELEC NUM=3 X.L=0.0 X.H=0.6	Y.L=0.0 Y.H=0.0
 + ELEC NUM=4 X.L=0.0 X.H=4.4	Y.L=2.0 Y.H=2.0
 +
 + DOPING UNIF P.TYPE CONC=2.5E16 X.L=0.0 X.H=4.4  Y.L=0.0 Y.H=2.0
 + DOPING UNIF P.TYPE CONC=1E16   X.L=0.0 X.H=4.4  Y.L=0.0 Y.H=0.05
 + DOPING UNIF N.TYPE CONC=1E20   X.L=0.0 X.H=1.1  Y.L=0.0 Y.H=0.2
 + DOPING UNIF N.TYPE CONC=1E20   X.L=3.3 X.H=4.4  Y.L=0.0 Y.H=0.2
 +
 + MODELS CONCMOB FIELDMOB
 + METHOD AC=DIRECT ONEC
 .TRAN 0.2NS 30NS
 .OPTIONS ACCT BYPASS=1
 .PRINT TRAN V(1) V(2)
 .END
--- a/examples/cider/serial/pass.cir
+++ b/examples/cider/serial/pass.cir
@ -0,0 +1,55 @@
 TURNOFF TRANSIENT OF PASS TRANSISTOR
 M1 11 2 3 4 MMOD W=20UM
 CS 1 0 6.0PF
 CL 3 0 6.0PF
 R1 3 6 200K
 VIN 6 0 DC 0
 VDRN 1 11 DC 0
 VG 2 0 DC 5 PWL 0 5 0.1N 0 1 0
 VB 4 0 DC 0.0
 .TRAN 0.05NS 0.2NS 0.0NS 0.05NS
 .PRINT TRAN V(1) I(VDRN)
 .IC V(1)=0 V(3)=0
 .OPTION ACCT BYPASS=1
 .MODEL MMOD NUMOS
 + X.MESH L=0.0 N=1
 + X.MESH L=0.6 N=4
 + X.MESH L=0.7 N=5
 + X.MESH L=1.0 N=7
 + X.MESH L=1.2 N=11
 + X.MESH L=3.2 N=21
 + X.MESH L=3.4 N=25
 + X.MESH L=3.7 N=27
 + X.MESH L=3.8 N=28
 + X.MESH L=4.4 N=31
 +
 + Y.MESH L=-.05 N=1
 + Y.MESH L=0.0  N=5
 + Y.MESH L=.05  N=9
 + Y.MESH L=0.3  N=14
 + Y.MESH L=2.0  N=19
 +
 + REGION NUM=1 MATERIAL=1 Y.L=0.0
 + MATERIAL NUM=1 SILICON
 + MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG
 +
 + REGION NUM=2 MATERIAL=2 Y.H=0.0 X.L=0.7 X.H=3.7
 + MATERIAL NUM=2 OXIDE
 +
 + ELEC NUM=1 X.L=3.8 X.H=4.4	Y.L=0.0 Y.H=0.0
 + ELEC NUM=2 X.L=0.7 X.H=3.7	IY.L=1  IY.H=1
 + ELEC NUM=3 X.L=0.0 X.H=0.6	Y.L=0.0 Y.H=0.0
 + ELEC NUM=4 X.L=0.0 X.H=4.4	Y.L=2.0 Y.H=2.0
 +
 + DOPING UNIF P.TYPE CONC=2.5E16 X.L=0.0 X.H=4.4  Y.L=0.0 Y.H=2.0
 + DOPING UNIF P.TYPE CONC=1E16   X.L=0.0 X.H=4.4  Y.L=0.0 Y.H=0.05
 + DOPING UNIF N.TYPE CONC=1E20   X.L=0.0 X.H=1.1  Y.L=0.0 Y.H=0.2
 + DOPING UNIF N.TYPE CONC=1E20   X.L=3.3 X.H=4.4  Y.L=0.0 Y.H=0.2
 +
 + MODELS CONCMOB FIELDMOB
 + METHOD AC=DIRECT ONEC
 .END
--- a/examples/cider/serial/pullup.cir
+++ b/examples/cider/serial/pullup.cir
@ -0,0 +1,67 @@
 BICMOS INVERTER PULLUP CIRCUIT
 VDD 1 0 5.0V
 VSS 2 0 0.0V
 VIN 3 0 0.75V
 VC  1 11 0.0V
 VB  5 15 0.0V
 Q1  11 15 4 M_NPN  AREA=4
 M1  5 3 1 1 M_PMOS W=20U L=2U AD=30P AS=30P PD=21U PS=21U
 CL  4 0 5.0PF
 .IC V(4)=0.75V V(5)=0.0V
 .MODEL M_PMOS PMOS VTO=-0.8 UO=250 TOX=25N NSUB=5E16
 + UCRIT=10K UEXP=.15 VMAX=50K NEFF=2 XJ=.02U
 + LD=.15U CGSO=.1N CGDO=.1N CJ=.12M MJ=0.5
 + CJSW=0.3N MJSW=0.5 LEVEL=2
 .MODEL M_NPN NBJT LEVEL=2
 + TITLE TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR
 + $ SINCE ONLY HALF THE DEVICE IS SIMULATED, DOUBLE THE UNIT WIDTH TO GET
 + $ 1.0 UM EMITTER.
 + OPTIONS DEFW=2.0U
 + OUTPUT STATISTICS
 + 
 + X.MESH W=2.0 H.E=0.02 H.M=0.5 R=2.0
 + X.MESH W=0.5 H.S=0.02 H.M=0.2 R=2.0
 + 
 + Y.MESH L=-0.2 N=1
 + Y.MESH L= 0.0 N=5
 + Y.MESH W=0.10 H.E=0.004 H.M=0.05  R=2.5
 + Y.MESH W=0.15 H.S=0.004 H.M=0.02  R=2.5
 + Y.MESH W=1.05 H.S=0.02  H.M=0.1   R=2.5
 +
 + DOMAIN NUM=1 MATERIAL=1 X.L=2.0 Y.H=0.0
 + DOMAIN NUM=2 MATERIAL=2 X.H=2.0 Y.H=0.0
 + DOMAIN NUM=3 MATERIAL=3 Y.L=0.0
 + MATERIAL NUM=1 POLYSILICON
 + MATERIAL NUM=2 OXIDE
 + MATERIAL NUM=3 SILICON
 +
 + ELEC NUM=1 X.L=0.0  X.H=0.0  Y.L=1.1  Y.H=1.3
 + ELEC NUM=2 X.L=0.0  X.H=0.5  Y.L=0.0  Y.H=0.0
 + ELEC NUM=3 X.L=2.0  X.H=3.0  Y.L=-0.2 Y.H=-0.2
 +
 + DOPING GAUSS N.TYPE CONC=3E20 X.L=2.0 X.H=3.0 Y.L=-0.2 Y.H=0.0
 + + CHAR.L=0.047 LAT.ROTATE
 + DOPING GAUSS P.TYPE CONC=5E18 X.L=0.0 X.H=5.0 Y.L=-0.2 Y.H=0.0
 + + CHAR.L=0.100 LAT.ROTATE
 + DOPING GAUSS P.TYPE CONC=1E20 X.L=0.0 X.H=0.5 Y.L=-0.2 Y.H=0.0
 + + CHAR.L=0.100 LAT.ROTATE RATIO=0.7
 + DOPING UNIF  N.TYPE CONC=1E16 X.L=0.0 X.H=5.0 Y.L=0.0 Y.H=1.3
 + DOPING GAUSS N.TYPE CONC=5E19 X.L=0.0 X.H=5.0 Y.L=1.3 Y.H=1.3
 + + CHAR.L=0.100 LAT.ROTATE
 +
 + METHOD AC=DIRECT ITLIM=10
 + MODELS BGN SRH AUGER CONCTAU CONCMOB FIELDMOB
 .TRAN 0.5NS 4.0NS
 .PRINT TRAN V(3) V(4)
 .OPTION ACCT BYPASS=1
 .END
--- a/examples/cider/serial/readme
+++ b/examples/cider/serial/readme
@ -0,0 +1,3 @@
 This directory contains the CIDER serial-version benchmarks used in the
 thesis "Design-Oriented Mixed-Level Circuit and Device Simulation" by
 David A. Gates.
--- a/examples/cider/serial/recovery.cir
+++ b/examples/cider/serial/recovery.cir
@ -0,0 +1,40 @@
 DIODE REVERSE RECOVERY
 VPP 1 0 0.0V (PULSE 1.0V -1.0V 1NS 1PS 1PS 20NS 40NS)
 VNN 2 0 0.0V
 RS  1 3 1.0
 LS  3 4 0.5UH
 DT  4 2 M_PIN AREA=1
 .MODEL M_PIN NUMD LEVEL=2
 + OPTIONS DEFW=100U
 + X.MESH N=1 L=0.0
 + X.MESH N=2 L=0.2
 + X.MESH N=4 L=0.4
 + X.MESH N=8 L=0.6
 + X.MESH N=13 L=1.0
 +
 + Y.MESH N=1 L=0.0
 + Y.MESH N=9 L=4.0
 + Y.MESH N=24 L=10.0
 + Y.MESH N=29 L=15.0
 + Y.MESH N=34 L=20.0
 +
 + DOMAIN NUM=1 MATERIAL=1
 + MATERIAL NUM=1 SILICON TN=20NS TP=20NS
 +
 + ELECTRODE NUM=1 X.L=0.6 X.H=1.0 Y.L=0.0 Y.H=0.0
 + ELECTRODE NUM=2 X.L=-0.1 X.H=1.0 Y.L=20.0 Y.H=20.0
 +
 + DOPING GAUSS P.TYPE CONC=1.0E19 CHAR.LEN=1.076 X.L=0.75 X.H=1.1 Y.H=0.0
 + + LAT.ROTATE RATIO=0.1
 + DOPING UNIF  N.TYPE CONC=1.0E14
 + DOPING GAUSS N.TYPE CONC=1.0E19 CHAR.LEN=1.614 X.L=-0.1 X.H=1.1 Y.L=20.0
 +
 + MODELS BGN SRH AUGER CONCTAU CONCMOB FIELDMOB
 .OPTION ACCT BYPASS=1
 .TRAN 0.1NS 10NS
 .PRINT TRAN V(3) I(VIN)
 .END
--- a/examples/cider/serial/rtlinv.cir
+++ b/examples/cider/serial/rtlinv.cir
@ -0,0 +1,25 @@
 RTL INVERTER
 VIN 1 0 DC 1 PWL 0 4 1NS 0
 VCC 12 0 DC 5.0
 RC1 12 3 2.5K
 RB1 1 2 8K
 Q1 3 2 0 QMOD AREA = 100P
 .OPTION ACCT BYPASS=1
 .TRAN 0.5N 5N
 .PRINT TRAN V(2) V(3)
 .MODEL QMOD NBJT LEVEL=1
 + X.MESH NODE=1  LOC=0.0
 + X.MESH NODE=61 LOC=3.0
 + REGION NUM=1 MATERIAL=1
 + MATERIAL NUM=1 SILICON NBGNN=1E17 NBGNP=1E17
 + MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG
 + DOPING UNIF N.TYPE CONC=1E17 X.L=0.0 X.H=1.0
 + DOPING UNIF P.TYPE CONC=1E16 X.L=0.0 X.H=1.5
 + DOPING UNIF N.TYPE CONC=1E15 X.L=0.0 X.H=3.0
 + MODELS BGNW SRH CONCTAU AUGER CONCMOB FIELDMOB
 + OPTIONS BASE.LENGTH=1.0 BASE.DEPTH=1.25
 .END
--- a/examples/cider/serial/vco.cir
+++ b/examples/cider/serial/vco.cir
@ -0,0 +1,41 @@
 VOLTAGE CONTROLLED OSCILLATOR
 RC1 7 5 1K
 RC2 7 6 1K
 Q5 7 7 5 QMOD AREA = 100P
 Q6 7 7 6 QMOD AREA = 100P
 Q3 7 5 2 QMOD AREA = 100P
 Q4 7 6 1 QMOD AREA = 100P
 IB1 2 0 .5MA
 IB2 1 0 .5MA
 CB1 2 0 1PF
 CB2 1 0 1PF
 Q1 5 1 3 QMOD AREA = 100P
 Q2 6 2 4 QMOD AREA = 100P
 C1 3 4 .1UF 
 IS1 3 0 DC 2.5MA PULSE 2.5MA 0.5MA 0 1US 1US 50MS
 IS2 4 0 1MA
 VCC 7 0 10
 .MODEL QMOD NBJT LEVEL=1
 + X.MESH NODE=1  LOC=0.0
 + X.MESH NODE=61 LOC=3.0
 + REGION NUM=1 MATERIAL=1
 + MATERIAL NUM=1 SILICON NBGNN=1E17 NBGNP=1E17
 + MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG
 + DOPING UNIF N.TYPE CONC=1E17 X.L=0.0 X.H=1.0
 + DOPING UNIF P.TYPE CONC=1E16 X.L=0.0 X.H=1.5
 + DOPING UNIF N.TYPE CONC=1E15 X.L=0.0 X.H=3.0
 + MODELS BGNW SRH CONCTAU AUGER CONCMOB FIELDMOB
 + OPTIONS BASE.LENGTH=1.0 BASE.DEPTH=1.25
 .OPTION ACCT BYPASS=1 
 .TRAN 3US 600US 0 3US
 .PRINT TRAN V(4)
 .END
--- a/examples/proc2mod/process.pro
+++ b/examples/proc2mod/process.pro
@ -0,0 +1,203 @@
 NM1  PM1  NM2  PM2  NM3   PY1  ML1  ML2  DU1  DU2
 *
 * Example process file
 *
 *PROCESS=BSIM 
 *RUN=
 *WAFER=
 *XPOS=6
 *YPOS=5
 *OPERATOR=Min-Chie
 *DATE=July-16-85
 *
 *   NMOS-1 PARAMETERS  (07-16-85)
 *
 -1.0087E+000,-2.1402E-001,3.44354E-001
 7.96434E-001,0.00000E+000,0.00000E+000
 1.31191E+000,3.23395E-001,-5.7698E-001
 1.46640E-001,1.68585E-001,-1.8796E-001
 -1.0027E-003,-9.4847E-003,1.47316E-002
 5.34334E+002,7.9799E-001,4.7740E-001
 4.38497E-002,6.38105E-002,-6.1053E-002
 -5.7332E-002,1.01174E+000,1.62706E-002
 8.25434E+000,-2.4197E+001,1.95696E+001
 -7.6911E-004,9.62411E-003,-3.7951E-003
 7.86777E-004,7.35448E-004,-1.7796E-003
 1.06821E-003,-8.0958E-003,4.03379E-003
 -1.9209E-002,-7.4573E-002,1.47520E-002
 5.40612E+002,6.21401E+002,-1.9190E+002
 -1.2992E+001,-6.4900E+001,4.29043E+001
 -9.4035E+000,1.18239E+002,-2.9747E+001
 0.0000E-002,0.00000E-001,0.0000E-002
 3.00000E-002,2.70000E+001,5.00000E+000
 **  2.70000E-010,2.70000E-010,1.40000E-010
 **  remove the overlap capacitances !!
 0.00000E-000,0.00000E-000,0.00000E-000
 1.0   0.0,   0.0
 0.0,  0.0,   0.0
 0.0,  0.0,   0.0
 0.0,  0.0,   0.0
 *
 *PROCESS=BSIM 
 *RUN=
 *WAFER=
 *XPOS=6
 *YPOS=5
 *OPERATOR= TRANSLATED FROM NM1
 *         (BY SCALING THE MOBILITY PARAMETERS)
 *DATE=July-16-85
 *
 *   PMOS-1 PARAMETERS  (07-16-85)
 *
 -1.0087E+000,-2.1402E-001,3.44354E-001
 7.96434E-001,0.00000E+000,0.00000E+000
 1.31191E+000,3.23395E-001,-5.7698E-001
 1.46640E-001,1.68585E-001,-1.8796E-001
 -1.0027E-003,-9.4847E-003,1.47316E-002
 1.82193E+002,2.7226E-001,1.6288E-001
 4.38497E-002,6.38105E-002,-6.1053E-002
 -5.7332E-002,1.01174E+000,1.62706E-002
 2.81626E+000,-0.8255E+001,0.66768E+001
 -7.6911E-004,9.62411E-003,-3.7951E-003
 7.86777E-004,7.35448E-004,-1.7796E-003
 1.06821E-003,-8.0958E-003,4.03379E-003
 -1.9209E-002,-7.4573E-002,1.47520E-002
 1.84449E+002,2.12012E+002,-0.6547E+002
 -0.4433E+001,-2.2143E+001,1.46383E+001
 -3.2083E+000,0.40341E+002,-1.0149E+001
 0.0000E-002,0.00000E-001,0.0000E-002
 3.00000E-002,2.70000E+001,5.00000E+000
 **  2.70000E-010,2.70000E-010,1.40000E-010
 **  remove the overlap capacitances !!
 0.00000E-000,0.00000E-000,0.00000E-000
 1.0   0.0,   0.0
 0.0,  0.0,   0.0
 0.0,  0.0,   0.0
 0.0,  0.0,   0.0
 *
 *
 *PROCESS=BSIM
 *RUN=6,8
 *WAFER=1
 *XPOS=6
 *YPOS=5
 *OPERATOR=joey & min
 *DATE=3/8/'85
 *
 *   NMOS-2 PARAMETERS  (03-08-85)
 *
 -1.0682E+000,-6.7765E-002,4.15888E-001
 7.93602E-001,0.00000E+000,0.00000E+000
 1.38210E+000,1.56889E-001,-6.3435E-001
 1.60163E-001,1.41849E-001,-2.0333E-001
 -1.1885E-002,1.33579E-002,2.13053E-002
 5.44582E+002,9.4444E-001,4.4423E-001
 4.02955E-002,5.36003E-002,-5.1224E-002
 2.01256E-001,4.30621E-001,-1.5909E-001
 -1.1522E+000,-2.5360E+000,2.48135E+001
 -3.0525E-003,1.40355E-002,-2.1259E-003
 2.33703E-003,-1.9621E-003,-3.0147E-003
 -1.5014E-003,-1.7938E-003,5.04494E-003
 -9.6961E-002,9.68463E-002,6.56404E-002
 5.95572E+002,4.75833E+002,-2.3062E+002
 -7.7819E+001,7.75110E+001,8.19963E+001
 -1.8177E+001,1.23358E+002,-1.9316E+001
 0.0000E-003,0.00000E-002,0.0000E-002
 3.20000E-002,2.70000E+001,5.00000E+000
 2.69000E-010,2.69000E-010,2.34000E-010
 1.0,   0.0,   0.0
 0.0,   0.0,   0.0
 0.0,   0.0,   0.0
 0.0,   0.0,   0.0
 *
 *   PMOS-2 PARAMETERS  (03-08-85)
 *
 -2.1389E-001,3.36471E-002,2.20237E-001
 6.97239E-001,0.00000E+000,0.00000E+000
 5.95618E-001,-9.7957E-002,-8.1902E-002
 -2.0029E-002,1.97751E-002,-4.0038E-002
 -1.4030E-002,3.62814E-002,1.44720E-002
 1.82193E+002,8.6560E-001,5.7444E-001
 1.12067E-001,9.28463E-002,-8.8985E-002
 2.39431E-002,8.89483E-002,1.05634E-002
 7.51914E+000,-1.8327E+000,3.98658E+000
 -1.3199E-003,4.00836E-003,1.97847E-004
 5.70255E-004,-1.2309E-003,-2.3082E-003
 5.07623E-003,-1.8537E-004,1.76966E-003
 -1.2781E-002,1.14420E-002,6.36308E-003
 1.89043E+002,8.64555E+001,-3.4304E+001
 4.09098E+000,3.51921E+000,4.49145E+000
 6.71879E-001,7.66627E+000,-1.5826E+000
 0.0000E-003,0.00000E-003,0.0000E-003
 3.20000E-002,2.70000E+001,5.00000E+000
 4.39000E-010,4.39000E-010,2.34000E-010
 1.0,   0.0,   0.0
 0.0,   0.0,   0.0
 0.0,   0.0,   0.0
 0.0,   0.0,   0.0
 *
 *PROCESS=BSIM 
 *RUN=
 *WAFER=
 *XPOS=6
 *YPOS=5
 *OPERATOR= TRANSLATED FROM NM1
 *         (BY SHIFTING VFB --- THE SIZE-INDEP. TERM ONLY)
 *DATE=July-16-85
 *
 *   NMOS-3 PARAMETERS  (DEPLETION-MODE)  (07-16-85)
 *
 -5.6087E+000,-2.1402E-001,3.44354E-001
 +** -1.0087E+000,-2.1402E-001,3.44354E-001
 7.96434E-001,0.00000E+000,0.00000E+000
 1.31191E+000,3.23395E-001,-5.7698E-001
 1.46640E-001,1.68585E-001,-1.8796E-001
 -1.0027E-003,-9.4847E-003,1.47316E-002
 5.34334E+002,7.9799E-001,4.7740E-001
 4.38497E-002,6.38105E-002,-6.1053E-002
 -5.7332E-002,1.01174E+000,1.62706E-002
 8.25434E+000,-2.4197E+001,1.95696E+001
 -7.6911E-004,9.62411E-003,-3.7951E-003
 7.86777E-004,7.35448E-004,-1.7796E-003
 1.06821E-003,-8.0958E-003,4.03379E-003
 -1.9209E-002,-7.4573E-002,1.47520E-002
 5.40612E+002,6.21401E+002,-1.9190E+002
 -1.2992E+001,-6.4900E+001,4.29043E+001
 -9.4035E+000,1.18239E+002,-2.9747E+001
 0.0000E-002,0.00000E-001,0.0000E-002
 3.00000E-002,2.70000E+001,5.00000E+000
 **  2.70000E-010,2.70000E-010,1.40000E-010
 **  remove the overlap capacitances !!
 0.00000E-000,0.00000E-000,0.00000E-000
 1.0   0.0,   0.0
 0.0,  0.0,   0.0
 0.0,  0.0,   0.0
 0.0,  0.0,   0.0
 *
 **************************************
 **************************************
 *
 *   poly layer-1
 *
 30.0,  7.0E-5,   0,        0,      0
 0,     0,        0,        0,      0
 *
 *   metal layer-1 
 *
 0.040, 2.60E-5,  0,        0,      0
 0,     0,        0,        0,      0
 *
 *   metal layer-2 (top metal)
 *
 0.030, 1.3E-5,   0,        0,      0
 0,     0,        0,        0,      0
 *
 *   n+ diffusion layer
 *
 35.0,  2.75E-4,  1.90E-10, 1.0E-5, 0.7
 0.8,   0.5,      0.33,     0,      0
 *
 *   p+ diffusion layer
 *
 120.0, 3.1E-4,   3.0E-010, 1.0E-5, 0.7
 0.8,   0.5,      0.33,     0,      0
--- a/examples/vbic/CEamp.sp
+++ b/examples/vbic/CEamp.sp
@ -0,0 +1,26 @@
 VBIC Pole Zero Test
 Vcc    3 0 5
 Rc     2 3 1k
 Rb     3 1 200k
 I1     0 1 AC 1
 Vmeas  4 2
 Cshunt 4 0 .1u
 Q1  2 1 0 0 N1
 .control
 ac dec 100 0.1Meg 10G
 plot db(i(vmeas))
 plot ph(i(vmeas))
 pz 1 0 4 0 cur pz
 print all
 .endc
 .MODEL N1 NPN LEVEL=4 
 + IS=1e-16 IBEI=1e-18 IBEN=5e-15 IBCI=2e-17 IBCN=5e-15 ISP=1e-15 RCX=10
 + RCI=60 RBX=10 RBI=40 RE=2 RS=20 RBP=40 VEF=10 VER=4 IKF=2e-3 ITF=8e-2
 + XTF=20 IKR=2e-4 IKP=2e-4 CJE=1e-13 CJC=2e-14 CJEP=1e-13 CJCP=4e-13 VO=2
 + GAMM=2e-11 HRCF=2 QCO=1e-12 AVC1=2 AVC2=15 TF=10e-12 TR=100e-12 TD=2e-11 RTH=300
 .END
--- a/examples/vbic/FG.sp
+++ b/examples/vbic/FG.sp
@ -0,0 +1,21 @@
 VBIC Gummel Test
 V1 Q1_E 0 5.0
 VC Q1_C 0 0.0 
 VB Q1_B 0 0.0
 Q1 Q1_C Q1_B Q1_E P1
 .DC V1 0.2 1.2 10m
 .OPTIONS GMIN=1e-13
 .control
 run
 plot abs(i(vc)) abs(i(vb)) ylimit 1e-15 0.1 ylog
 plot abs(i(vc))/abs(i(vb)) vs abs(-i(vc)) xlimit 1e-09 0.1 xlog
 .endc
 .MODEL P1 PNP LEVEL=4 
 + IS=1e-16 IBEI=1e-18 IBEN=5e-15 IBCI=2e-17 IBCN=5e-15 ISP=1e-15 RCX=10
 + RCI=60 RBX=10 RBI=40 RE=2 RS=20 RBP=40 VEF=10 VER=4 IKF=2e-3 ITF=8e-2
 + XTF=20 IKR=2e-4 IKP=2e-4 CJE=1e-13 CJC=2e-14 CJEP=1e-13 CJCP=4e-13 VO=2
 + GAMM=2e-11 HRCF=2 QCO=1e-12 AVC1=2 AVC2=15 TF=10e-12 TR=100e-12 TD=2e-11 RTH=300
 .END
--- a/examples/vbic/FO.sp
+++ b/examples/vbic/FO.sp
@ -0,0 +1,20 @@
 VBIC Output Test
 V1 V1_P V1_N 0.0
 VB V1_N 0 0.5
 VC Q1_C 0 0.0
 Q1 Q1_C V1_P 0 N1
 .DC VC 0 5 50M VB 700M 1 50M
 .control
 run
 plot -i(vc)
 plot -i(vb)
 .endc
 .MODEL N1 NPN LEVEL=4 
 + IS=1e-16 IBEI=1e-18 IBEN=5e-15 IBCI=2e-17 IBCN=5e-15 ISP=1e-15 RCX=10
 + RCI=60 RBX=10 RBI=40 RE=2 RS=20 RBP=40 VEF=10 VER=4 IKF=2e-3 ITF=8e-2
 + XTF=20 IKR=2e-4 IKP=2e-4 CJE=1e-13 CJC=2e-14 CJEP=1e-13 CJCP=4e-13 VO=2
 + GAMM=2e-11 HRCF=2 QCO=1e-12 AVC1=2 AVC2=15 TF=10e-12 TR=100e-12 TD=2e-11 RTH=300
 .END
--- a/examples/vbic/diffamp.sp
+++ b/examples/vbic/diffamp.sp
@ -0,0 +1,45 @@
 VBIC DiffAmp Test
 Q8 Q8_B Q8_B VCC P1
 Q9 Q9_B Q9_B Q8_B P1
 V1 VCC 0 3.3 
 V2 V2_P R3_N  AC 1 DC 0 Sine(0 10m 10Meg 0 0)
 I1 VCC I1_N 10u
 Q12 Q9_B I1_N 0 N1 M=2
 Q13 Q5_B I1_N 0 N1 M=2
 Q10 Q1_E I1_N 0 N1
 Q11 I1_N I1_N 0 N1
 E1 E1_P 0 Q3_C Q4_C 1
 rl e1_p 0 1e6
 Q2 Q6_C R3_N Q1_E N1
 R4 R3_N 0 1K
 Q3 Q3_C Q9_B Q5_C P1
 Q1 Q5_C V2_P Q1_E N1
 Q6 Q6_C Q5_B VCC P1
 R1 Q3_C 0 100k
 Q7 Q5_B Q5_B VCC P1
 Q4 Q4_C Q9_B Q6_C P1
 R2 Q4_C 0 100k
 R3 VCC R3_N 1K
 Q5 Q5_C Q5_B VCC P1
 *.OP
 .TRAN 1n 1u 0 10n
 *.AC DEC 25 100k 1G
 .control
 run
 plot v(e1_p)
 .endc
 .MODEL N1 NPN LEVEL=4 
 + IS=1e-16 IBEI=1e-18 IBEN=5e-15 IBCI=2e-17 IBCN=5e-15 ISP=1e-15 RCX=10
 + RCI=60 RBX=10 RBI=40 RE=2 RS=20 RBP=40 VEF=10 VER=4 IKF=2e-3 ITF=8e-2
 + XTF=20 IKR=2e-4 IKP=2e-4 CJE=1e-13 CJC=2e-14 CJEP=1e-13 CJCP=4e-13 VO=2
 + GAMM=2e-11 HRCF=2 QCO=1e-12 AVC1=2 AVC2=15 TF=10e-12 TR=100e-12 TD=2e-11 RTH=300
 .MODEL P1 PNP LEVEL=4 
 + IS=1e-16 IBEI=1e-18 IBEN=5e-15 IBCI=2e-17 IBCN=5e-15 ISP=1e-15 RCX=10
 + RCI=60 RBX=10 RBI=40 RE=2 RS=20 RBP=40 VEF=10 VER=4 IKF=2e-3 ITF=8e-2
 + XTF=20 IKR=2e-4 IKP=2e-4 CJE=1e-13 CJC=2e-14 CJEP=1e-13 CJCP=4e-13 VO=2
 + GAMM=2e-11 HRCF=2 QCO=1e-12 AVC1=2 AVC2=15 TF=10e-12 TR=100e-12 TD=2e-11 RTH=300
 .END
--- a/examples/vbic/diode.sp
+++ b/examples/vbic/diode.sp
@ -0,0 +1,19 @@
 VBIC diode test
 Q1 0 0 VCC P1
 V1 VCC 0 1.0
 .OP
 .MODEL N1 NPN LEVEL=4 
 + IS=1e-16 IBEI=1e-18 IBEN=5e-15 IBCI=2e-17 IBCN=5e-15 ISP=1e-15 RCX=10
 + RCI=60 RBX=10 RBI=40 RE=2 RS=20 RBP=40 VEF=10 VER=4 IKF=2e-3 ITF=8e-2
 + XTF=20 IKR=2e-4 IKP=2e-4 CJE=1e-13 CJC=2e-14 CJEP=1e-13 CJCP=4e-13 VO=2
 + GAMM=2e-11 HRCF=2 QCO=1e-12 AVC1=2 AVC2=15 TF=10e-12 TR=100e-12 TD=2e-11 RTH=300
 .MODEL P1 PNP LEVEL=4 
 + IS=1e-16 IBEI=1e-18 IBEN=5e-15 IBCI=2e-17 IBCN=5e-15 ISP=1e-15 RCX=10
 + RCI=60 RBX=10 RBI=40 RE=2 RS=20 RBP=40 VEF=10 VER=4 IKF=2e-3 ITF=8e-2
 + XTF=20 IKR=2e-4 IKP=2e-4 CJE=1e-13 CJC=2e-14 CJEP=1e-13 CJCP=4e-13 VO=2
 + GAMM=2e-11 HRCF=2 QCO=1e-12 AVC1=2 AVC2=15 TF=10e-12 TR=100e-12 TD=2e-11 RTH=300
 .END
--- a/examples/vbic/noise_scale_test.sp
+++ b/examples/vbic/noise_scale_test.sp
@ -0,0 +1,25 @@
 VBIC Noise Scale Test
 V1 R3_P 0 5 
 V2 V2_P 0 5 AC 1
 C1 R3_N V2_P 1n  
 R4 R3_N 0 100k
 Q1 VOUT R3_N Q1_E N1 M=2
 *Q2 VOUT R3_N Q1_E N1
 R1 R3_P VOUT 100k
 R2 Q1_E 0 10k
 R3 R3_P R3_N 500k
 .NOISE v(vout) V2 DEC 25 1k 100Meg
 .control
 run
 plot sqrt(onoise_spectrum) loglog
 .endc
 .MODEL N1 NPN LEVEL=4 
 + IS=1e-16 IBEI=1e-18 IBEN=5e-15 IBCI=2e-17 IBCN=5e-15 ISP=1e-15 RCX=10
 + RCI=60 RBX=10 RBI=40 RE=2 RS=20 RBP=40 VEF=10 VER=4 IKF=2e-3 ITF=8e-2
 + XTF=20 IKR=2e-4 IKP=2e-4 CJE=1e-13 CJC=2e-14 CJEP=1e-13 CJCP=4e-13 VO=2
 + GAMM=2e-11 HRCF=2 QCO=1e-12 AVC1=2 AVC2=15 TF=10e-12 TR=100e-12 TD=2e-11 
 + RTH=300 KFN=10e-15 AFN=1 BFN=1
 .END
--- a/examples/vbic/temp.sp
+++ b/examples/vbic/temp.sp
@ -0,0 +1,20 @@
 VBIC Temp test
 V1 1 0 1.0
 VC 1 Q1_C 0.0
 VB 1 Q1_B 0.0
 Q1 Q1_C Q1_B 0 N1
 .OPTIONS TEMP=150
 .DC V1 0.2 1.2 10m
 .control
 run
 plot i(vc) i(vb)
 .endc
 .MODEL N1 NPN LEVEL=4 
 + IS=1e-16 IBEI=1e-18 IBEN=5e-15 IBCI=2e-17 IBCN=5e-15 ISP=1e-15 RCX=10
 + RCI=60 RBX=10 RBI=40 RE=2 RS=20 RBP=40 VEF=10 VER=4 IKF=2e-3 ITF=8e-2
 + XTF=20 IKR=2e-4 IKP=2e-4 CJE=1e-13 CJC=2e-14 CJEP=1e-13 CJCP=4e-13 VO=2
 + GAMM=2e-11 HRCF=2 QCO=1e-12 AVC1=2 AVC2=15 TF=10e-12 TR=100e-12 TD=2e-11 RTH=300
 .END
--- a/examples/vbic/tran_aplac_test.sp
+++ b/examples/vbic/tran_aplac_test.sp
@ -0,0 +1,23 @@
 VBIC Aplac Transient Test
 V1 R3_P 0 5 
 V2 V2_P 0 5 Pulse(0 100m 0 10n 10n 490.1n 1u)
 C1 R3_N V2_P 1n  
 R4 R3_N 0 100k
 Q1 R1_N R3_N Q1_E N1
 R1 R3_P R1_N 100k
 R2 Q1_E 0 10k
 R3 R3_P R3_N 500k
 .control
 tran 10n 10u
 run
 plot v(Q1_E)
 .endc
 .MODEL N1 NPN LEVEL=4 
 + IS=1e-16 IBEI=1e-18 IBEN=5e-15 IBCI=2e-17 IBCN=5e-15 ISP=1e-15 RCX=10
 + RCI=60 RBX=10 RBI=40 RE=2 RS=20 RBP=40 VEF=10 VER=4 IKF=2e-3 ITF=8e-2
 + XTF=20 IKR=2e-4 IKP=2e-4 CJE=1e-13 CJC=2e-14 CJEP=1e-13 CJCP=4e-13 VO=2
 + GAMM=2e-11 HRCF=2 QCO=1e-12 AVC1=2 AVC2=15 TF=10e-12 TR=100e-12 TD=2e-11 RTH=300
 .END
--- a/examples/vbic/vbic.sp
+++ b/examples/vbic/vbic.sp
@ -0,0 +1,46 @@
 VBIC Test
 VC 1  0 DC 2.0
 VB 2  0 DC 0.7
 VE 3  0 DC 0.0
 *VS 4  0 DC 0.0
 Q1 1  2  3  VBIC_HSPICE
 .OPTIONS GMIN=1e-13
 *.OP
 .DC VB 0.2 1.0 0.01
 .control
 run
 plot abs(-i(vc)) abs(-i(vb)) ylimit 1e-12 0.1 ylog
 plot abs(-i(vc))/abs(-i(vb)) vs abs(-i(vc)) xlimit 1e-09 0.1 xlog
 .endc
 .MODEL VBIC NPN LEVEL=4
 + RCX=10 RCI=10 RBX=1 RBI=10 RE=1 RBP=10 RS=10
 + IBEN=1.0E-13
 + RTH=100
 .MODEL VBIC_HSPICE NPN LEVEL=4
 + AFN=1 AJC=-0.5 AJE=0.5 AJS=0.5 
 + AVC1=0 AVC2=0 BFN=1 CBCO=0 CBEO=0 CJC=2E-14 
 + CJCP=4E-13 CJE=1E-13 CJEP=1E-13 CTH=0 
 + EA=1.12 EAIC=1.12 EAIE=1.12 EAIS=1.12 EANC=1.12 
 + EANE=1.12 EANS=1.12 FC=0.9 GAMM=2E-11 HRCF=2 
 + IBCI=2E-17 IBCIP=0 IBCN=5E-15 IBCNP=0 
 + IBEI=1E-18 IBEIP=0 IBEN=5E-15 IBENP=0 
 + IKF=2E-3 IKP=2E-4 IKR=2E-4 IS=1E-16 ISP=1E-15 ITF=8E-2 
 + KFN=0 MC=0.33 ME=0.33 MS=0.33 
 + NCI=1 NCIP=1 NCN=2 NCNP=2 NEI=1 NEN=2 
 + NF=1 NFP=1 NR=1 PC=0.75 PE=0.75 PS=0.75 QCO=1E-12 QTF=0 
 + RBI=4 RBP=4 RBX=1 RCI=6 RCX=1 RE=0.2 RS=2 
 + RTH=300 TAVC=0 TD=2E-11 TF=10E-12 TNF=0 TR=100E-12 
 + TNOM=25 VEF=10 VER=4 VO=2 
 + VTF=0 WBE=1 WSP=1 
 + XII=3 XIN=3 XIS=3 XRBI=1 XRCI=1 XRE=1 XRS=1 XTF=20 XVO=0 
 .MODEL VBIC_APLAC NPN LEVEL=4 
 + IS=1e-16 IBEI=1e-18 IBEN=5e-15 IBCI=2e-17 IBCN=5e-15 ISP=1e-15 RCX=10
 + RCI=60 RBX=10 RBI=40 RE=2 RS=20 RBP=40 VEF=10 VER=4 IKF=2e-3 ITF=8e-2
 + XTF=20 IKR=2e-4 IKP=2e-4 CJE=1e-13 CJC=2e-14 CJEP=1e-13 CJCP=4e-13 VO=2
 + GAMM=2e-11 HRCF=2 QCO=1e-12 AVC1=2 AVC2=15 TF=10e-12 TR=100e-12 TD=2e-11 RTH=300
 .END