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@ -57,10 +57,10 @@ VDMOSload(GENmodel *inModel, CKTcircuit *ckt) |
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int error; |
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int selfheat; |
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double rd0T, rd1T, dBeta_dT, dIds_dT; |
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double rd0T, rd1T, dBeta_dT, dIds_dT=0.0; |
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double Vrd=0.0, dIth_dVrd=0.0, dIrd_dT=0.0; |
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double drd0T_dT, drd1T_dT, drd_dT, dgdrain_dT=0.0; |
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double dIrd_dgdrain; |
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double drd0T_dT, drd1T_dT, dgdrain_dT=0.0; |
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double rsT, Vrs=0.0, dIth_dVrs=0.0, dIrs_dT=0.0, dgsource_dT=0.0; |
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double deldelTemp=0.0, delTemp, delTemp1, Temp, Vds, Vgs; |
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double ceqqth=0.0; |
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double GmT, gTtg, gTtdp, gTtt, gTtsp, gcTt=0.0; |
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@ -270,7 +270,7 @@ VDMOSload(GENmodel *inModel, CKTcircuit *ckt) |
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} |
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if (selfheat) |
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delTemp = DEVlimitlog(delTemp, |
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*(ckt->CKTstate0 + here->VDMOSdelTemp),30,&Check_th); |
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*(ckt->CKTstate0 + here->VDMOSdelTemp),10,&Check_th); |
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else |
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delTemp = 0.0; |
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#endif /*NODELIMITING*/ |
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@ -278,7 +278,7 @@ VDMOSload(GENmodel *inModel, CKTcircuit *ckt) |
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} |
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if (selfheat) { |
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Temp = here->VDMOStemp + delTemp; |
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Temp = delTemp + CONSTCtoK; |
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VDMOStempUpdate(model, here, Temp, ckt); |
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} else { |
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Temp = here->VDMOStemp; |
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@ -287,17 +287,24 @@ VDMOSload(GENmodel *inModel, CKTcircuit *ckt) |
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/* Calculate temperature dependent values for self-heating effect */ |
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if (selfheat) { |
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double TempRatio = Temp / here->VDMOStemp; |
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Beta = here->VDMOStTransconductance * pow(TempRatio,model->VDMOSmu); |
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Beta = here->VDMOStTransconductance; |
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dBeta_dT = Beta * model->VDMOSmu / Temp; |
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rd0T = here->VDMOSdrainResistance * pow(TempRatio, model->VDMOStexp0); |
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rd0T = here->VDMOSdrainResistance; |
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if (model->VDMOStexp0Given) |
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drd0T_dT = rd0T * model->VDMOStexp0 / Temp; |
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else |
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drd0T_dT = model->VDMOSdrainResistance / here->VDMOSm |
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* (model->VDMOStrd1 + 2 * model->VDMOStrd2 * (Temp - model->VDMOStnom)); |
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rd1T = 0.0; |
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drd1T_dT = 0.0; |
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if (model->VDMOSqsGiven) { |
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rd1T = here->VDMOSqsResistance * pow(TempRatio, model->VDMOStexp1); |
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rd1T = here->VDMOSqsResistance; |
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drd1T_dT = rd1T * model->VDMOStexp1 / Temp; |
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} |
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rsT = 1 / here->VDMOSsourceConductance; |
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double drsT_dT = model->VDMOSsourceResistance / here->VDMOSm |
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* (model->VDMOStrs1 + 2 * model->VDMOStrs2 * (Temp - model->VDMOStnom)); |
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dgsource_dT = -drsT_dT / (rsT*rsT); |
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} else { |
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Beta = here->VDMOStTransconductance; |
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dBeta_dT = 0.0; |
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@ -307,6 +314,7 @@ VDMOSload(GENmodel *inModel, CKTcircuit *ckt) |
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drd1T_dT = 0.0; |
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if (model->VDMOSqsGiven) |
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rd1T = here->VDMOSqsResistance; |
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dgsource_dT = 0.0; |
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} |
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/* |
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@ -359,7 +367,6 @@ VDMOSload(GENmodel *inModel, CKTcircuit *ckt) |
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double betap = Beta*t0/t1; |
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double dbetapdvgs = -Beta*theta*t0/(t1*t1); |
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double dbetapdvds = Beta*lambda/t1; |
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double dbetapdT = dBeta_dT*t0/t1; |
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double t2 = exp((vgst-shift)/slope); |
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vgst = slope * log(1 + t2); |
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@ -370,14 +377,27 @@ VDMOSload(GENmodel *inModel, CKTcircuit *ckt) |
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cdrain = betap * vgst*vgst * .5; |
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here->VDMOSgm = betap*vgst*dvgstdvgs + 0.5*dbetapdvgs*vgst*vgst; |
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here->VDMOSgds = .5*dbetapdvds*vgst*vgst; |
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dIds_dT = dbetapdT * vgst*vgst * .5; |
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} |
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else { |
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/* linear region */ |
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cdrain = betap * vdss * (vgst - .5 * vdss); |
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here->VDMOSgm = betap*vdss*dvgstdvgs + vdss*dbetapdvgs*(vgst-.5*vdss); |
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here->VDMOSgds = vdss*dbetapdvds*(vgst-.5*vdss) + betap*mtr*(vgst-.5*vdss) - .5*vdss*betap*mtr; |
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dIds_dT = dbetapdT * vdss * (vgst - .5 * vdss); |
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} |
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if (selfheat) { |
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double dvgst_dT = model->VDMOStype * model->VDMOStcvth; |
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double dvdsat_dT = 0.0; |
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if (vgst > 0) { |
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dvdsat_dT = dvgst_dT; |
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} |
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double dt1_dT = theta * dvdsat_dT; |
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double dbetap_dT = t0 * (t1 * dBeta_dT - Beta * dt1_dT) / (t1 * t1); |
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if (vgst <= vdss) { |
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dIds_dT = .5 * dbetap_dT * vgst*vgst + betap * vgst * dvgst_dT; |
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} |
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else { |
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dIds_dT = vdss * (dbetap_dT * vgst + betap * dvgst_dT) - dbetap_dT * vdss * .5 * vdss; |
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} |
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} |
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} |
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@ -409,7 +429,7 @@ VDMOSload(GENmodel *inModel, CKTcircuit *ckt) |
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*(ckt->CKTrhsOld + here->VDMOSdNode) - |
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*(ckt->CKTrhsOld + here->VDMOSsNode)); |
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double rd = rd0T + rd1T * (vdsn / (vdsn + fabs(model->VDMOSqsVoltage))); |
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drd_dT = drd0T_dT + drd1T_dT * (vdsn / (vdsn + fabs(model->VDMOSqsVoltage))); |
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double drd_dT = drd0T_dT + drd1T_dT * (vdsn / (vdsn + fabs(model->VDMOSqsVoltage))); |
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if (rd > 0) { |
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here->VDMOSdrainConductance = 1 / rd + ckt->CKTgmin; |
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dgdrain_dT = -drd_dT / (rd*rd); |
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@ -442,10 +462,16 @@ VDMOSload(GENmodel *inModel, CKTcircuit *ckt) |
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- here->VDMOSgtempT * delTemp; |
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Vrd = *(ckt->CKTrhsOld + here->VDMOSdNode) - *(ckt->CKTrhsOld + here->VDMOSdNodePrime); |
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dIth_dVrd = here->VDMOSdrainConductance * Vrd; |
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dIrd_dgdrain = Vrd; |
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dIth_dVrd = here->VDMOSdrainConductance * 2 * Vrd; |
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double dIrd_dgdrain = Vrd; |
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dIrd_dT = dIrd_dgdrain * dgdrain_dT; |
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here->VDMOScth += here->VDMOSdrainConductance * Vrd*Vrd - dIth_dVrd*Vrd - dIrd_dT*Vrd*delTemp; |
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Vrs = *(ckt->CKTrhsOld + here->VDMOSsNode) - *(ckt->CKTrhsOld + here->VDMOSsNodePrime); |
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dIth_dVrs = here->VDMOSsourceConductance * 2 * Vrs; |
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double dIrs_dgsource = Vrs; |
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dIrs_dT = dIrs_dgsource * dgsource_dT; |
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here->VDMOScth += here->VDMOSsourceConductance * Vrs*Vrs - dIth_dVrs*Vrs - dIrs_dT*Vrs*delTemp; |
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} |
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/* |
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@ -466,8 +492,11 @@ VDMOSload(GENmodel *inModel, CKTcircuit *ckt) |
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DevCapVDMOS(vgd, cgdmin, cgdmax, a, cgs, |
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(ckt->CKTstate0 + here->VDMOScapgs), |
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(ckt->CKTstate0 + here->VDMOScapgd)); |
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// Everything is computed for m parallel instances... so scale cthj accordingly |
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*(ckt->CKTstate0 + here->VDMOScapth) = here->VDMOSm * model->VDMOScthj; /* always constant */ |
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/* Everything is computed for m parallel instances... so scale cthj accordingly |
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* Also, take into account Meyer numerical integration style and |
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* halve the value of cthj that gets stored in the state. |
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*/ |
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*(ckt->CKTstate0 + here->VDMOScapth) = here->VDMOSm * model->VDMOScthj / 2; /* always constant */ |
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vgs1 = *(ckt->CKTstate1 + here->VDMOSvgs); |
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vgd1 = vgs1 - *(ckt->CKTstate1 + here->VDMOSvds); |
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@ -550,8 +579,6 @@ bypass: |
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{ |
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error = NIintegrate(ckt, &gcTt, &ceqqth, capth, here->VDMOSqth); |
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if (error) return(error); |
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ceqqth = ceqqth - gcTt*delTemp + ckt->CKTag[0] * |
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*(ckt->CKTstate0 + here->VDMOSqth); |
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} |
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} |
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@ -598,13 +625,16 @@ bypass: |
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*(ckt->CKTrhs + here->VDMOSsNodePrime) += cdreq + model->VDMOStype * ceqgs; |
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if (selfheat) { |
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*(ckt->CKTrhs + here->VDMOSdNode) += dIrd_dT * delTemp; |
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*(ckt->CKTrhs + here->VDMOSsNode) += dIrs_dT * delTemp; |
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*(ckt->CKTrhs + here->VDMOSdNodePrime) += GmT * delTemp - dIrd_dT * delTemp; |
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*(ckt->CKTrhs + here->VDMOSsNodePrime) += -GmT * delTemp; |
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*(ckt->CKTrhs + here->VDMOSsNodePrime) += -GmT * delTemp - dIrs_dT * delTemp; |
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*(ckt->CKTrhs + here->VDMOStempNode) += here->VDMOScth - ceqqth; |
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double vCktTemp = (ckt->CKTtemp-CONSTCtoK); /* ckt temperature */ |
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double vDevTemp = (ckt->CKTtemp-CONSTCtoK); /* ckt temperature */ |
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if (here->VDMOStempGiven) |
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vDevTemp = (here->VDMOStemp-CONSTCtoK); /* device temperature */ |
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if (ckt->CKTmode & MODETRANOP) |
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vCktTemp *= ckt->CKTsrcFact; |
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*(ckt->CKTrhs + here->VDMOSvcktTbranch)+= vCktTemp; |
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vDevTemp *= ckt->CKTsrcFact; |
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*(ckt->CKTrhs + here->VDMOSvdevTbranch)+= vDevTemp; |
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} |
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/* |
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@ -641,26 +671,28 @@ bypass: |
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if (selfheat) |
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{ |
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// Everything is computed for m parallel instances... so scale gthjc and gthja accordingly |
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/* Everything is computed for m parallel instances... so scale gthjc and gthja accordingly |
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*/ |
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double gthjc = here->VDMOSm / model->VDMOSrthjc; |
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double gthca = here->VDMOSm / model->VDMOSrthca; |
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(*(here->VDMOSDtempPtr) += dIrd_dT); |
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(*(here->VDMOSDPtempPtr) += GmT - dIrd_dT); |
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(*(here->VDMOSSPtempPtr) += -GmT); |
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(*(here->VDMOSGPtempPtr) += 0.0); |
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(*(here->VDMOSTemptempPtr) += -gTtt - dIrd_dT*Vrd + gthjc + gcTt); |
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(*(here->VDMOSStempPtr) += dIrs_dT); |
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(*(here->VDMOSSPtempPtr) += -GmT - dIrs_dT); |
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(*(here->VDMOSTemptempPtr) += -gTtt - dIrd_dT*Vrd - dIrs_dT*Vrs + gthjc + gcTt); |
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(*(here->VDMOSTempgpPtr) += -gTtg); |
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(*(here->VDMOSTempdPtr) += -dIth_dVrd); |
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(*(here->VDMOSTempsPtr) += -dIth_dVrs); |
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(*(here->VDMOSTempdpPtr) += -gTtdp + dIth_dVrd); |
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(*(here->VDMOSTempspPtr) += -gTtsp); |
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(*(here->VDMOSTempspPtr) += -gTtsp + dIth_dVrs); |
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(*(here->VDMOSTemptcasePtr) += -gthjc); |
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(*(here->VDMOSTcasetempPtr) += -gthjc); |
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(*(here->VDMOSTcasetcasePtr) += gthjc + gthca); |
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(*(here->VDMOSTptpPtr) += gthca); |
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(*(here->VDMOSTptcasePtr) += -gthca); |
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(*(here->VDMOSTcasetpPtr) += -gthca); |
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(*(here->VDMOSCktTtpPtr) += 1.0); |
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(*(here->VDMOSTpcktTPtr) += 1.0); |
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(*(here->VDMOSDevTtpPtr) += 1.0); |
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(*(here->VDMOSTpdevTPtr) += 1.0); |
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} |
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/* body diode model |
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@ -672,18 +704,18 @@ bypass: |
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double vtebrk, vbrknp; |
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double cdb, cdeq; |
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double capd; |
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double gd, gdb, gspr; |
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double gd, gdb, gbpr; |
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double delvd; /* change in diode voltage temporary */ |
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double evrev; |
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double Ith=0.0, dIth_dT=0.0; |
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double dIdio_dT=0.0, dIth_dVdio=0.0; |
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double vrs=0.0, dIrs_dT=0.0, dIth_dVrs=0.0; |
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double vrb=0.0, dIrb_dT=0.0, dIth_dVrb=0.0; |
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#ifndef NOBYPASS |
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double tol; /* temporary for tolerance calculations */ |
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#endif |
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gspr = here->VDIOtConductance; |
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gbpr = here->VDIOtConductance; |
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vt = CONSTKoverQ * Temp; |
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vte = model->VDIOn * vt; |
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@ -878,18 +910,18 @@ bypass: |
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load: |
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#endif |
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if (selfheat) { |
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double dIrs_dgspr, dIth_dIrs; |
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vrs = *(ckt->CKTrhsOld + here->VDMOSsNode) - *(ckt->CKTrhsOld + here->VDIOposPrimeNode); |
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double dIrb_dgbpr, dIth_dIrb; |
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vrb = *(ckt->CKTrhsOld + here->VDMOSsNode) - *(ckt->CKTrhsOld + here->VDIOposPrimeNode); |
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Ith = vd*cd + vrs*vrs*gspr; |
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Ith = vd*cd + vrb*vrb*gbpr; |
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dIth_dVdio = cd + vd*gd; |
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dIth_dVrs = vrs*gspr; |
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dIth_dVrb = vrb*gbpr; |
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dIrs_dgspr = vrs; |
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dIrs_dT = dIrs_dgspr * here->VDIOtConductance_dT; |
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dIth_dIrs = vrs; |
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dIth_dT = dIth_dIrs*dIrs_dT + dIdio_dT*vd; |
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dIrb_dgbpr = vrb; |
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dIrb_dT = dIrb_dgbpr * here->VDIOtConductance_dT; |
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dIth_dIrb = vrb; |
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dIth_dT = dIth_dIrb*dIrb_dT + dIdio_dT*vd; |
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} |
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/* |
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* load current vector |
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@ -903,28 +935,28 @@ load: |
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*(ckt->CKTrhs + here->VDIOposPrimeNode) += cdeq; |
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} |
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if (selfheat) { |
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*(ckt->CKTrhs + here->VDIOposPrimeNode) += dIdio_dT*delTemp - dIrs_dT*delTemp; |
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*(ckt->CKTrhs + here->VDIOposPrimeNode) += dIdio_dT*delTemp - dIrb_dT*delTemp; |
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*(ckt->CKTrhs + here->VDMOSdNode) += -dIdio_dT*delTemp; |
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*(ckt->CKTrhs + here->VDMOSsNode) += dIrs_dT*delTemp; |
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*(ckt->CKTrhs + here->VDMOStempNode) += Ith - model->VDMOStype*dIth_dVdio*vd - dIth_dVrs*vrs - dIth_dT*delTemp; |
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*(ckt->CKTrhs + here->VDMOSsNode) += dIrb_dT*delTemp; |
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*(ckt->CKTrhs + here->VDMOStempNode) += Ith - model->VDMOStype*dIth_dVdio*vd - dIth_dVrb*vrb - dIth_dT*delTemp; |
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} |
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/* |
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* load matrix |
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*/ |
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*(here->VDMOSSsPtr) += gspr; |
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*(here->VDMOSSsPtr) += gbpr; |
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*(here->VDMOSDdPtr) += gd; |
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*(here->VDIORPrpPtr) += (gd + gspr); |
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*(here->VDIOSrpPtr) -= gspr; |
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*(here->VDIORPrpPtr) += (gd + gbpr); |
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*(here->VDIOSrpPtr) -= gbpr; |
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*(here->VDIODrpPtr) -= gd; |
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*(here->VDIORPsPtr) -= gspr; |
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*(here->VDIORPsPtr) -= gbpr; |
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*(here->VDIORPdPtr) -= gd; |
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if (selfheat) { |
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(*(here->VDMOStempSPtr) += -dIth_dVrs); |
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(*(here->VDIOTempposPrimePtr) += -dIth_dVdio + dIth_dVrs); |
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(*(here->VDMOSTempsPtr) += -dIth_dVrb); |
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(*(here->VDIOTempposPrimePtr) += -dIth_dVdio + dIth_dVrb); |
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(*(here->VDMOSTempdPtr) += dIth_dVdio); |
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(*(here->VDMOSTemptempPtr) += -dIth_dT); |
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(*(here->VDIOPosPrimetempPtr) += dIdio_dT - dIrs_dT); |
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(*(here->VDMOSSTempPtr) += dIrs_dT); |
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(*(here->VDIOPosPrimetempPtr) += dIdio_dT - dIrb_dT); |
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(*(here->VDMOSStempPtr) += dIrb_dT); |
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(*(here->VDMOSDtempPtr) += -dIdio_dT); |
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} |
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} |
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dwarning
4 months ago