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@ -11,10 +11,62 @@ replaced by a special cap model. A body diode with series |
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resistance is parallel to the D/S device nodes. It defines the |
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reverse behavior, but also the breakdown of the transistor. |
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This is a work in progress. |
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Basic current equations for ac, dc and tran operations are |
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available as well as the capacitance model. |
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Subthreshold behavior (parameter subthres) is available, |
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calibration with LTSPICE is stilll missing. |
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Subthreshold behavior (parameter ksubthres) is available, |
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and is compatible with LTSPICE. An alternative weak inversion |
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model may be seected by choosing the subslope parameter instead |
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of ksubthres. |
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A quasi saturation model enhancement is available. |
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The model parameters supported are: |
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/* basic device */ |
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"vto", ,"Threshold voltage" |
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"kp", "Transconductance parameter" |
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"phi", "Surface potential" |
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"lambda","Channel length modulation" |
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"rd", "Drain ohmic resistance" |
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"rs", "Source ohmic resistance" |
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"rg", "Gate ohmic resistance" |
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"tnom", "Parameter measurement temperature" |
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"kf", "Flicker noise coefficient" |
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"af", "Flicker noise exponent" |
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/* quasi saturation */ |
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"rq", "Quasi saturation resistance fitting parameter" |
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"vq", "Quasi saturation voltage fitting parameter" |
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"mtriode", "Conductance multiplier in triode region" |
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/* weak inversion */ |
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"subslope", "Slope of weak inversion log current versus vgs - vth " |
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"subshift", "Shift of weak inversion plot on the vgs axis " |
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"ksubthres", "Slope n from (vgs-vth)/n, LTSPICE and SuperSpice standard" |
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/* body diode */ |
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"bv", "Vds breakdown voltage" |
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"ibv", "Current at Vds=bv" |
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"nbv", "Vds breakdown emission coefficient" |
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"rds", "Drain-source shunt resistance" |
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"rb", "Body diode ohmic resistance" |
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"n", "Bulk diode emission coefficient" |
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"tt", "Body diode transit time" |
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"eg", "Body diode activation energy for temperature effect on Is" |
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"Xti", "Body diode saturation current temperature exponent" |
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"is", "Body diode saturation current" |
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"vj", "Body diode junction potential" |
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/* body diode capacitance (e.g. source-drain capacitance */ |
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"fc", "Body diode coefficient for forward-bias depletion capacitance formula" |
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"cjo", "Zero-bias body diode junction capacitance" |
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"m", "Body diode grading coefficient" |
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/* gate-source and gate-drain capacitances */ |
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"cgdmin", "Minimum non-linear G-D capacitance" |
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"cgdmax", "Maximum non-linear G-D capacitance" |
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"a", "Non-linear Cgd capacitance parameter" |
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"cgs", "Gate-source capacitance" |